• 제목/요약/키워드: Doped Cu

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Synthesis of high quality infinite-layer superconducting compound of Sr$_{0.9}$Sm$_{0.1}$CuO$2$ and its pinning properties

  • Park, Min-Seok;Kim, J.Y.;Kim, Mun-Seog;Kim, Heon-Jung;Lee, Sung-Ik;Jung, C.U.
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.125-127
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    • 2000
  • We report high pressure synthesis of Sr$_{0.9}$Sm$_{0.1}$CuO$_2$. Powder x-ray diffraction showed that the synthesized compounds have infinite layer structure as a major component. Slow heating at the first stage of heating processes after pressurization resulted in several larger grains. The largest grain was found to have the longest edge length of about 100 micrometer. Through magnetic property measurement in superconducting state, we found that pinning in this compound has substantial difference from that of La doped infinite layer, which has no unpaired spin at Sr site.

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Structural and Electrical Properties of Cu(In,Ga)Se2 Solar Modules under Damp Heat and Thermal Cycling Tests

  • Lee, Dong-Won;Kim, Yong-Nam;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.456.2-456.2
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    • 2014
  • Cu(In,Ga)Se2 (CIGS) 화합물은 태양광을 흡수하기에 가장 이상적인 약 1.04 eV의 에너지 금지대 폭과 높은 광흡수계수를 가지고 있으며, $450{\sim}590^{\circ}C$의 고온 공정에도 매우 안정하여 열 경화현상을 거의 보이지 않으므로 박막 태양전지로서 커다란 응용 잠재력을 갖고 있는 광흡수층 재료이다. CIGS 화합물 박막 태양전지의 효율은 연구실에서는 ~20%의 높은 효율을 보고하고 있으며, 모듈급에서도 ~13%의 효율을 보이고 있다. 그러나 CIGS 박막 태양전지를 대면적 또는 양산화에 적용하기 위해서는 20년 이상의 장기적인 수명을 보장할 수 있는 내구성을 갖추어야 한다. 본 연구에서는 CIGS 모듈의 장기적인 신뢰성을 평가하기 위해 CIGS PV 모듈을 대상으로 IEC-61646 규격을 이용하여 고온고습 시험 ($85^{\circ}C$/85% RH, 1000 h) 과 열충격 시험 ($-40^{\circ}C/140^{\circ}C$, 1000 cycles) 이 수행되었고, 두 종류의 가속 스트레스 시험 후에 모듈의 성능 저하에 영향을 미치는 요인들이 연구되었다. 또한, 모듈의 효율 저하의 원인을 규명하기 위해 투명전극 Al-doped ZnO (AZO)와 광흡수층 CIGS를 대상으로 고장분석을 수행하였다. AZO층과 CIGS층의 전기적 특성 분석, 결장상 분석 및 XPS 분석들을 종합하여 CIGS PV 모듈의 성능저하의 원인을 규명하였다.

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Characteristics of electrochemical properties polypyrrole (PPy) film doped with Cu(II), Ni(II) by electrochemical cementation process (CEMENTATION 공정으로 Cu(II)와 Ni(II) 이온을 각각 도우핑한 전도성 고분자의 전기화학적 특성 분석)

  • Yun, Dong-Hwa;Jin, Joon-Hyung;Yang, Jung-Hoon;Min, Nam-Ki;Hong, Suk-In
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.2011-2013
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    • 2002
  • 일반적으로, 전도성 고분자는 금속에 준하는 전기 전도도와 다공성을 이용한 전해질 이온 및 생채 고분자의 물리, 화학적 도우핑 능력을 장점으로 한다. 따라서, 이 분야의 최근 연구동향도 이온 도우핑에 의한 전도성 고분자의 전기 전도도 향상에 초점이 맞추어져 있으며, 이미 다수의 연구진에 의행 여러 가지 방법이 제시되었다. 본 논문은 전기 화학적 cementation 공정을 이용하여 금속 이온을 전도성 고분자에 도우핑하고 특성을 고찰하였다. 전도성 고분자로써 polypyrrole (PPy)을 사용하고, micropaticles (구리와 니켈 이온)를 도펀트 (dopant)로 하여 -1.5 V ${\sim}$ 2V의 범위에서 순환 전압 전류법 (Cyclic voltammetry)을 이용해 organic-inorganic complex를 제작하였고, 각각의 전극을 비교, 분석 하였다. 구리 이온을 도우핑한 PPy 필름은 전기 전도도가 매우 우수하나 대기 중 공기 및 수분에 의해 쉽게 산화되므로 life-time이 짧다. 이를 보완하기 위하여 상대적으로 안정한 니켈 이온을 도우핑한 PPy 필름의 전기 화학적 특성을 고찰하였다. 전극의 표면은 SEM (Scanning Electron Microscopy), EDX (Energy Dispersive X-ray spectroscopy)를 이용하여 분석하였다.

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A resistivity anomaly at 380 K in reproduced LK-99

  • Sangjin Kim;Kwang-Tak Kim;Jeonghun Kang;Dong-Hyeon Gim;Yoon Han Lee;Kee Hoon Kim
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.4
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    • pp.10-13
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    • 2023
  • To confirm the room-temperature superconductivity at ambient pressure as claimed in recent arXiv preprints by Lee et al., we followed the original authors' systematic solid-state synthesis recipe to reproduce Cu-doped Pb-apatite, known as LK-99. Using X-ray diffraction and Raman spectroscopy, we identified inclusion of various impurities alongside the apatite phase in our sample. While the sample exhibited an overall semiconducting behavior in electrical transport, an intriguing resistivity anomaly at 380 K was observed, possibly originating from a structural phase transition of the Cu2-δS impurity. Based on the transport and magnetization measurements, we conclude that the sample is a non-magnetic semiconductor, with absence of superconductivity.

Creep Deformation Behaviors of Tin Pest Resistant Solder Alloys (Tin Pest 방지 솔더합금의 크리프 특성)

  • Kim S. B.;Yu Jin;Sohn Y. C.
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.47-52
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    • 2005
  • Worldwide movement for prohibition of Pb usage drives imminent implementation of Pb-free solders in microelectronic packaging industry. Reliability information of Pb-free solders has not been completely constructed yet. One of the potential reliability concerns of Pb-free solders is allotropic transformation of Sn known as tin pest. Volume increase during the formation of tin pest could deteriorate the reliability of solder joints. It was also reported that the addition of soluble elements (i.e. Pb, Bi, and Sb) into Sn can effectively suppress the tin pest. However, the mechanical properties of the tin pest resistant alloys have not been studied in detail. In this study, lap shear creep test was conducted with Sn and Sn-0.7Cu based solder alloys doped with minor amount of Bi or Sb. Shear strain rates of the alloy were generally higher than those of Sn-3.5Ag based alloys. Rupture strains and corresponding Monkman- Grant products were largest for Sn-0.5Bi alloy and smallest for Sn-0.7Cu-0.5Sb alloy. Rupture surface Sn-0.5Bi alloy showed highly elongated $\beta$-Sn globules necked to rupture by shear stresses, while elongation of $\beta$-Sn globules of Sn-0.7Cu-0.5Sb alloy was relatively smaller.

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Synthesis of Li1.6[MnM]1.6O4 (M=Cu, Ni, Co, Fe) and Their Physicochemical Properties as a New Precursor for Lithium Adsorbent (Li1.6[MnM]1.6O4(M=Cu, Ni, Co, Fe)의 합성 및 리튬 흡착제용 신규 전구체로서의 물리화학적 성질)

  • Kim, Yang-Soo;Moon, Won-Jin;Jeong, Soon-Ki;Won, Dae-Hee;Lee, Sang-Ro;Kim, Byoung-Gyu;Chung, Kang-Sup
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.10
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    • pp.4660-4665
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    • 2011
  • New precursors as a Li adsorbent, $Li_{1.6}(MnM)_{1.6}O_4$ (M=Cu, Ni, Co, Fe), were synthesized by hydrothermal method and their physicochemical properties were discussed. XRD and HRTEM results revealed that the original spinel structure was stabilized by cobalt-doping while Cu-, Ni- and Fe-doping led to structural changes. Such a structural stabilization by Cobalt-doping was maintained after lithium leaching by acid treatment. Li absorption efficiency from seawater was significantly enhanced by using the Cobalt-doped spinel manganese oxide, $Li_{1.6}[MnCo]_{1.6}O_4$, compared to the commercially available $Li_{1.33}Mn_{1.67}O_4$; the adsorbed amount of Li from 1g-adsorbent was 35 and 16 mg by $Li_{1.6}[MnCo]_{1.6}O_4$, and $Li_{1.33}Mn_{1.67}O_4$, respectively.

Synthesis, Characterization and ESR Studies of New Copper(II) Complexes of Vicinal Oxime Ligands (Vicinal Oxime 리간드의 새로운 구리(II) 착물에 대한 합성, 특성 및 ESR 연구)

  • El-Tabl, Abdou S.;Shakdofa, Mohamad M.E.;El-Seidy, Ahmed M.A.
    • Journal of the Korean Chemical Society
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    • v.55 no.4
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    • pp.603-611
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    • 2011
  • Ethoxylacetyl oxime ligands [HL, (1) and $H_2L^1$, (3)] react with copper(II) acetate monohydrate yield octahedral and square planar complexes, respectively. The complexes have been postulated due to elemental analyses, IR, UVVis. spectra, magnetic susceptibility, conductivity and ESR spectra. Molar conductance of the complexes in DMF indicates a non-ionic character. The ESR spectra of [$(L)_2Cu(H_2O)_2$], (2) complex at room temperature and 77K are characteristic of an axial symmetry ($d_{x2-y2}$) with covalent bond character and have a large line width typical of dipolar interactions. However, [$(L^1)Cu$], (4) complex in the solid state showed spectra of marked broadening and loss of hyperfine splitting confirming spinexchange interactions between the copper(II) sites. The spectrum of the doped copper(II) complex at room temperature showed super-hyperfine splitting from coordinated nitrogen atoms and it has an axial type ($d_{x2-y2}$) with covalent bond character and an essentially square-planar arrangement around the copper(II) ion. The spectrum of [$(L^1)Cu$], (4) in frozen methanol at 77K was characteristic of the triplet state of a dimer species and the distance found between the two copper(II) centers was calculated and is equal to 4.8 ${\AA}$.

Structural and Electrical Properties of [(Co1-xCux)0.2(Ni0.3Mn0.7)0.8]3O4 Spinel Thin Films for Infrared Sensor Application (적외선 센서용 [(Co1-xCux)0.2(Ni0.3Mn0.7)0.8]3O4 스피넬 박막의 구조 및 전기적 특성)

  • Lee, Kui Woong;Jeon, Chang Jun;Jeong, Young Hun;Yun, Ji Sun;Cho, Jeong Ho;Paik, Jong Hoo;Yoon, Jong-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.12
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    • pp.825-830
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    • 2014
  • $[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ ($0{\leq}x{\leq}1$) thin films prepared by metal organic decomposition process were fabricated on SiN/Si substrate for infrared sensor application. Their structural and electrical properties were investigated with variation of Cu dopant. The $[(Co_{1-x}Cu_x)_{0.2}(Ni_{0.3}Mn_{0.7})_{0.8}]_3O_4$ (CCNMO) film annealed at $500^{\circ}C$ exhibited a dense microstructure and a homogeneous crystal structure with a cubic spinel phase. Their crystallinity was further enhanced with increasing doped Cu amount. The 120 nm-thick CCNMO (x=0.6) thin film had a low resistivity of $53{\Omega}{\cdot}cm$ at room temperature while the Co-free film (x=1) showed a significantly decreased resistivity of $5.9{\Omega}{\cdot}cm$. Furthermore, the negative temperature coefficient of resistance (NTCR) characteristics were lower than $-2%/^{\circ}C$ for all the specimens with $x{\geq}0.6$. These results imply that the CCNMO ($x{\geq}0.6$) thin films are a good candidate material for infrared sensor application.

Low-Temperature Sintering of Barium Calcium Zirconium Titanate Lead-Free Piezoelectric Ceramics

  • Fisher, John G.;Lee, Dae-Gi;Oh, Jeong-Hyeon;Kim, Ha-Nul;Nguyen, Dieu;Kim, Jee-Hoon;Lee, Jong-Sook;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.50 no.2
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    • pp.157-162
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    • 2013
  • The need for lead-free piezoceramics has caused a renewal of interest in $BaTiO_3$-based systems. Recently, it was found that ceramics in the $(Ba,Ca)(Zr,Ti)O_3$ system have properties comparable to those of $Pb(Zr,Ti)O_3$. However, these ceramics require rather high sintering temperatures of $1450-1550^{\circ}C$. In this work, the effect of $TiO_2$ and CuO addition on the sintering behavior, microstructure, dielectric and piezoelectric properties of $(Ba_{0.85}Ca_{0.15})(Zr_{0.1}Ti_{0.9})O_3$ (BCTZ) ceramics will be discussed. BCTZ ceramics were prepared by the mixed oxide route and 1 mol % of $TiO_2$ or CuO was added. Undoped and doped ceramics were sintered at $1350^{\circ}C$ for 1-5 h. CuO was found to be a very effective sintering aid, with samples sintered for 1 h at $1350^{\circ}C$ having a bulk density of 95% theoretical density; however the piezoelectric properties were greatly reduced, probably due to the small grain size.

The Effects of Mn-doping and Electrode Material on the Resistive Switching Characteristics of ZnOxS1-x Thin Films on Plastic

  • Han, Yong;Cho, Kyoungah;Park, Sukhyung;Kim, Sangsig
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.1
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    • pp.24-27
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    • 2014
  • In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.