• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.388-393
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• 2018

Sublimation of $Bi_2O_3$-based materials is an important degradation issue for the long-term applications of many electronic devices. A series of $SnO_2$-doped $Bi_2O_3$ materials (SBO), was synthesized, densified, and then tested in air or strong reducing atmosphere. The $SnO_2$-doping effects and sublimation kinetics of the SBO materials were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and precise mass loss measurement. The results show that formation of $Bi_2Sn_2O_7$ phase greatly retards the mass loss of SBO. The SBO samples show a surface sublimation in an energy of $52.6kJ{\cdot}mol^{-1}$. However, the sublimation is also controlled by surface microstructure as the amount of vaporizing species (the Bi or gaseous Bi-oxides) is more than 0.1 mass%. The evaporation is retarded on the rough surface and the mechanism of surface evaporation is changed to diffusional control.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.88-88
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• 1992

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.61-67
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• 2020

BiFeO₃ with perovskite structure is a well-known material that has both ferroelectric and antiferromagnetic properties called multiferroics. However, leaky electrical properties and difficulty of controlling stoichiometry due to Bi volatility and difficulty of obtaining high relative density due to high dependency on the ceramic process are issues for BiFeO₃ applications. In this work we investigated the sintering behavior of samples with different stoichiometries and sintering conditions. To understand the optimum sintering conditions, nonstoichiometric Bi_1±xFeO_3±δ ceramics and Ti-doped Bi_1.03Fe_1-4x/3Ti_xO₃ ceramics were synthesized by a conventional solid-state route. Dense single phase BiFeO₃ ceramics were successfully fabricated using a two-step sintering and quenching process. The effects of Bi volatility on microstructure were determined by Bi-excess and Ti doping. Bi-excess increased grain size, and Ti doping increased sintering temperature and decreased grain size. It should be noted that Ti-doping suppressed Bi volatility and stabilized the BiFeO₃ phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.987-993
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• 2003

We fabricated thick film monopole antennas using Mo-doped BiNbO$_4$ ceramics and investigated their electrical properties as a function of the Mo-doping concentration. Compared with undoped BiNbO$_4$ ceramics, 10 at.% Mo-doping improved microwave dielectric properties of ceramics by increased sintered density as well as decreased space charge density. Further increase in the Mo-doping concentration caused formation of Bi$_2$MoO$_{6}$ phases, resulting in deterioration of the microwave characteristics. The gain and bandwidth of the ceramic monopole antenna were also greatly affected by the Mo-doping concentration. When Mo-doping concentration was 10 at.%, highest gain of -0.7dBi with lowest bandwidth of 30% at 2.3GHz was obtained.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.284-289
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• 2014

The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.3
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• pp.229-233
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• 2019

Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.808-815
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• 2005

[ $Bi_xCe_{l-x}O_{2-x/2}$ ](BD C : Bismuth Doped Ceria) powders with x = 0.1, 0.2, and 0.3 were synthesized using the Glycine Nitrate Process (GNP). They were then calcined at $500^{\circ}C$ for 2 hand sintered in a pellet or rod form at 900, 1000 or $1100^{\circ}C$ for 4 h for characterization as the alternative electrolyte material for intermediate temperature solid oxide fuel cells. The BDC powder consisted of a single phase of $CeO_2-Bi_2O_3$ solid solution in the as-synthesized state as well as in the as-calcined state with a mean powder size of 4.5nm in the former state and 6.5 - 10.1nm in the latter. On the contrary, the second phase of $\alpha-Bi_2O_3$ was observed to have been formed in the sinter with its amount increasing roughly with increasing temperature or $Bi_2O_3$ content. The BOC powder was superior in sinterability to other alternative electrolyte materials such as GDC, ScSZ, and LSGM with the minimum sintering temperature for a relative density of $95\%$ or larger as low as $1100^{\circ}C$. The ionic conductivity of BOC increased with $Bi_2O_3$ content and the maximum value of 0.119 S/cm was obtained at $800^{\circ}C$ for $Bi_{0.3}Ce_{0.7}O_{1.85}$.

• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.371-375
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• 2006

Effects of $Ag_2O$ doping on the electromagnetic properties in the BiSrCaCuO superconductor. The electromagnetic properties of doped and undoped $Ag_2O$ in the BiSrCaCuO superconductor were evaluated to investigate the contribution of the pinning centers. It was confirmed experimentally that a larger amount of magnetic flux was trapped in the $Ag_2O$ doped sample than in the undoped one, indicating that the pinning centers of magnetic flux are related closely to the occurrence of the magnetic effect. We have fabricated superconductor ceramics by the chemical process. A high Tc superconductor with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_y$ was prepared by the organic metal salts method. Experimental results suggest that the intermediate phase formed before the formation of the superconductor phase may be the most important factor. The relation between electromagnetic properties of Bi HTS and the external applied magnetic field was studied. The electrical resistance of the superconductor was increased by the application of the external magnetic field. But the increase in the electrical resistance continues even after the removal of the magnetic field. The reason is as follows; the magnetic flux due to the external magnetic field penetrates through the superconductor and the penetrated magnetic flux is trapped after the removal of the magnetic flux. During the sintering, doped $Ag_2O$ was converted to Ag particles that were finely dispersed in superconductor samples. It is considered that the area where normal conduction takes place increases by adding $Ag_2O$ and the magnetic flux penetrating through the sample increases. The results suggested that $Ag_2O$ acts to amplify pinning centers of magnetic flux, contributing to the occurrence of the electromagnetic properties.