• 제목/요약/키워드: Domain wall

검색결과 387건 처리시간 0.028초

Current-Induced Magnetic Domain-Wall Motion by Spin Transfer Torque: Collective Coordinate Approach with Domain-Wall Width Variation

  • Jung, Soon-Wook;Lee, Hyun-Woo
    • Journal of Magnetics
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    • 제12권1호
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    • pp.1-6
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    • 2007
  • The spin transfer torque generated by a spin-polarized current can induce the shift of the magnetic domain-wall position. In this work, we study theoretically the current-induced domain-wall motion by using the collective coordinate approach [Gen Tatara and Hiroshi Kohno, Phys. Rev. Lett. 92, 86601 (2004)]. The approach is extended to include not only the domain-wall position and the polarization angle changes but also the domain-wall width variation. It is demonstrated that the width variation affects the critical current.

The Effect of Domain Wall on Defect Energetics in Ferroelectric LiNbO3 from Density Functional Theory Calculations

  • Lee, Donghwa
    • 한국세라믹학회지
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    • 제53권3호
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    • pp.312-316
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    • 2016
  • The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

Ferroelastic Domain Wall Motions in Lead Zirconate Titanate Under Compressive Stress Observed by Piezoresponse Force Microscopy

  • Kim, Kwanlae
    • 한국전기전자재료학회논문지
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    • 제30권9호
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    • pp.546-550
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    • 2017
  • Ferroelectric properties are governed by domain structures and domain wall motions, so it is of significance to understand domain evolution processes under mechanical stress. In the present study, in situ piezoresponse force microscopy (PFM) observation under compressive stress was carried out for a near-morphotropic PZT. Both $180^{\circ}$ and $non-180^{\circ}$ domain structures were observed from PFM images, and their habit planes were identified using electron backscatter diffraction in conjunction with PFM data. By externally applied mechanical stress, needle-like $non-180^{\circ}$ domain patterns were broadened via domain wall motions. This was interpreted via phenomenological approach such that the total energy minimization can be achieved by domain wall motion rather than domain nucleation mainly due to the local gradient energy. Meanwhile, no motion was observed from curvy $180^{\circ}$ domain walls under the mechanical stress, validating that $180^{\circ}$ domain walls are not directly influenced by mechanical stress.

Domain Wall Motions in Ferromagnetic Thin Film Induced by Laser Heating Pulse

  • Park, Hyun Soon
    • Applied Microscopy
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    • 제48권4호
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    • pp.128-129
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    • 2018
  • Soft ferromagnetic materials are utilized for various electromagnetic devices such as magnetic recording heads and magnetic shielding. In situ observation of magnetic microstructures and domain wall motions are prerequisite for understanding and improving their magnetic properties. In this work, by the Fresnel (out-of-focus) method of Lorentz microscopy, we observe the domain wall motions of polycrystalline Ni/Ti thin film layers triggered by single-shot laser pulse. Random motions of domain walls were visualized at every single pulse.

Concepts for Domain Wall Motion in Nanoscale Ferromagnetic Elements due to Spin Torque and in Particular Oersted Fields

  • Klaui, Mathias;Ilgaz, Dennis;Heyne, Lutz;Kim, June-Seo;Boulle, Olivier;Schieback, Christine;Zinser, Fabian;Krzyk, Stephen;Fonin, Mikhail;Rudiger, Ulrich;Backes, Dirk;Heyderman, Laura J.;Mentes, T.O.;Locatelli, A.
    • Journal of Magnetics
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    • 제14권2호
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    • pp.53-61
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    • 2009
  • Herein, different concepts for domain wall propagation based on currents and fields that could potentially be used in magnetic data storage devices based on domains and domain walls are reviewed. By direct imaging, we show that vortex and transverse walls can be displaced using currents due to the spin transfer torque effect. For the case of field-induced wall motion, particular attention is paid to the influence of localized fields and local heating on the depinning and propagation of domain walls. Using an Au nanowire adjacent to a permalloy structure with a domain wall, the depinning field of the wall, when current pulses are injected into the Au nanowire, was studied. The current pulse drastically modified the depinning field, which depended on the interplay between the externally applied field direction and polarity of the current, leading subsequently to an Oersted field and heating of the permalloy at the interface with the Au wire. Placing the domain wall at various distances from the Au wire and studying different wall propagation directions, the range of Joule heating and Oersted field was determined; both effects could be separated. Approaches beyond conventional field- and current-induced wall displacement are briefly discussed.

Simulation of the Effect of Soft Underlayer Domain Wall Structure on Output Signal in Perpendicular Magnetic Recording

  • Kim, Eun-Sik;Lim, Chee-Kheng;Kim, Yong-Su;Lee, Ju
    • Journal of Magnetics
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    • 제11권2호
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    • pp.83-86
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    • 2006
  • Controlling magnetic domains in soft underlayer (SUL) of perpendicular magnetic recording (PMR) is an important issue for the application of PMR in HDD. We studied the magnetic domain structures in SUL using the finite element based micromagnetic simulation (FEMM) for the SUL models with different thicknesses. The purpose is to simulate the magnetic domain wall noise when the SUL thickness and saturation magnetization are changed. The simulation results show that a 15 nm SUL forms simpler Neel wall domain wall pattern and 40 nm SUL forms complex Bloch wall. To visualize the effect of these domain walls stray field at a read sensor position, the magnetic stray field of the domain walls at air bearing surface (ABS) which is 50 nm above the SUL was simulated and the results imply that Bloch walls have stronger stray field with more complicated field patterns than Neel walls and this becomes a significant noise source. Therefore, the thickness of the SUL should be controlled to avoid the formation of Bloch walls.

광자기 기억장치에서의 자화반전 특성 모델링 (A Modelling of magnetization reversal characteristics in magneto-optic memory system)

  • 한은실;이광형;조순철
    • 한국통신학회논문지
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    • 제19권10호
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    • pp.1849-1860
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    • 1994
  • 본 논문은 비정질 회토류 천이 급속 박막내에서의 자벽 역학(Magnetic domain wall dynamics)을 란다우 리프쉬츠 길버트 (Landau Lifshitz Gilbert) 방정식을 이용한 수치적 해석을 수행하여 연구하였다. 박막을 이차원 정방형 격자($30\times30$)로 나누고, 각 격자 셀(Cell)에 쌍극자간 존재한다고 상정하여, 이들 쌍극자간의 상호 교환 작용과 자기 이방성, 외부 인가 자계, 그리고 감자계의 영향이 고려되었다. 단축 자기 이방성이 존재하고 역방향의 자화가 존재한다고 가정된 상태에서 자벽이 형성되는 시간과 자벽의 두께를 알아보았다. 또한 외부 자계의 인가에 따른 자벽 이동을 연구하였다. 시뮬레이션 결과, 감자계를 고려했을 때 자벽 형성 시간이 상당히 빨라졌고, 평균 자벽의 이동도(Mobility)는 약간 증가되었다.

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좁은 자벽의 두께에 강자성층의 두께가 미치는 영향 (Effect of a Ferromagnetic Layer Thickness on a Narrow Domain Wall Width)

  • 임호택;유천열
    • 한국자기학회지
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    • 제15권6호
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    • pp.303-306
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    • 2005
  • Micromagnetics 전산 모사를 이용하여 국소적 층간교환상호작용이 있는 강자성/비자성/강자성 다층박막 구조에서 Bloch 자벽이나 Neel 자벽보다 더 얇은 두께의 자벽이 인위적으로 형성될 수 있음을 보였고, 이때 생성된 좁은 자벽의 두께가 강자성층의 두께에 의해 영향을 받음을 보였다. 국소적 층간교환상호작용을 가진 $Fe_1/Cr/Fe_2$ 구조에서 좁은 자벽이 생성됨을 보였고, $Fe_2$ 층의 두께를 20nm로 고정시키고 $Fe_1$층의 두께를 각각 1, 2, 4, 6nm으로 변화시켜가며 전산 모사를 수행하여 $Fe_1$ 층의 두께가 감소함에 따라 자벽의 두께가 얇아짐을 확인하였다.

SURFACE ROUGHNESS EFFECTS ON THE COERCIVITY OF THIN FILM HEADS

  • Kim, Hyunkyu;Horvath, M. Pardavi
    • 한국자기학회지
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    • 제5권5호
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    • pp.663-666
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    • 1995
  • The domain wall motion coercivity, $H_{c}$, of magnetic materials arises from the dependence of the wall energy on localized changes in material parameters (magnetization, anisotropy, exchange energy densities). However, in an otherwise perfectly homogeneous material, the domain wall energy might change due to the change in the volume of the wall versus the wall position. Thus, any surface roughness contributes to the coercivity. Assuming different two-dimensional surface profiles, characterized by average wavelengths ${\lambda}_{x}$ and ${\lambda}_{y}$, and relative thickness variations dh/h, the coercivity due to the surface roughness has been calculated. Compared to the one dimensional case, the 2D coercivity is reduced. Depending on the ratio of ${\lambda}$ to the domain wall width, $H_{c}$ has a maximum around 2, and increasing with dh/h. With the decreasing thickness of the thin film and GMR heads, it might be the domain factor in determining the coercivity.

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Initial Magnetization and Coercivity Mechanism in Amorphous TbxCo1-x Thin Films with Perpendicular Anisotropy

  • Kim, Tae-Wan;Lee, Ha-Na;Lee, Hyun-Yong;Lee, Kyoung-Il
    • Journal of Magnetics
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    • 제15권4호
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    • pp.169-172
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    • 2010
  • The coercivity mechanism in permanent magnets was analyzed according to the effects of domain nucleation and domain wall pinning. The coercivity mechanism of a TbCo thin film with high perpendicular magnetic anisotropy was considered in terms of the local inhomogeneity in the thin film. The initial magnetization curves of the TbCo thin films demonstrated domain wall pinning to be the main contributor to the coercivity mechanism than domain nucleation. Based on the coercivity model proposed by Kronmuller et al., the inhomogeneity size acting as a domain wall pinning site was determined. Using the measured values of perpendicular anisotropy constant ($K_u$), saturation magnetization ($M_s$), and coercivity ($H_c$), the inhomogeneity size estimated in a TbCo thin film with high coercivity was approximately 9 nm.