• Title/Summary/Keyword: Dislocation loops

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Defects evolution and element segregation of Ni-Mo-Cr alloy irradiated by 30 keV Ar ions

  • Liu, Min;Liu, Wenguan;He, Xiujie;Gao, Yantao;Liu, Renduo;Zhou, Xingtai
    • Nuclear Engineering and Technology
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    • v.52 no.8
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    • pp.1749-1755
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    • 2020
  • In present study, TEM foils of Ni-Mo-Cr alloy were directly irradiated with 30 keV Ar ions to allow direct characterization. The defects evolution and element segregation after irradiation were investigated by TEM and HAADF-EDS linear scanning. At low irradiation doses (1.38 and 2.76 dpa), black dots were formed and grew with increasing dose. Complicated defects including peas-shaped dislocation loops, polygon dislocation networks and large loops were visible in samples irradiated to high doses (13.8 and 27.6 dpa). Meanwhile, dislocation channels appeared, in which defects were swept out. Significant Mo depletions at dislocation lines and grain boundaries were induced by irradiation due to large misfits between Mo-Ni atoms and high content of Mo.

The Secondary Defect Structure in Al-Cu-Mg Alloy (Al-Cu-Mg 합금에 있어서의 2차 결함조직)

  • Cho, Hyun-Kee;Woo, Kee-Do
    • Applied Microscopy
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    • v.16 no.2
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    • pp.14-24
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    • 1986
  • The interrelation of secondary defects, intermediate S' phase and aging condition in Al-2.0 wt% Cu-1.1 wt% Mg alloy is studied by transmission electron microscope. The results obtained in this study are as follows. 1. High density of dislocation loops, helices and stacking faults are observed in this specimen with aging treatment. 2. The number of dislocation loops and the width of loop free zone (LFZ) are increased with aging time. 3. The intermediate S' phase precipitates and grows on the dislocations and secondary defects. 4. The misfit dislocations are formed around intermediate S' phase. 5. It is thought that the helices appear to be produced by the climb of screw dislocations, while the dislocation loops appear to be formed both by condensation of vacancies into collapsed discs and by interaction of helices with screw of opposite sign.

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Self diffusion of cation in yttria stabilized zirconia single crystal

  • Cheong, Deock-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.5
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    • pp.237-241
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    • 2009
  • Dislocation dipoles were formed in the early stage of deformation of Y-CSZ single crystal at high temperatures. And the dipoles were pinched off to break into dipoles loops by dislocation climb. Dislocation loop annealing was peformed in Y-CSZ single crystal to evaluate the diffusivity of cation which was the rate-controlling ion.

Microstructural Characteristics of the Fuel Cladding Tubes Irradiated in Kori Unit 1

A High-Resolution Transmission Electron Microscopy Study on the Lattice Defects Formed in the High Energy P Ion Implanted Silicon (고에너지 P이온 주입한 실리콘에 형성된 격자 결함에 관한 고분해능 투과전자현미경 연구)

  • 장기완;이정용;조남훈;노재상
    • Journal of the Korean Ceramic Society
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    • v.32 no.12
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    • pp.1377-1382
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    • 1995
  • A high-resolution transmission electron microscopy study on the lattice defects formed in the high energy P ion implanted silicon was carried out on an atomic level. Results show that Lomer dislocations, 60$^{\circ}$perfect dislocations, 60$^{\circ}$ dislocation dipole and extrinsic stacking fault formed in the near Rp of as-implanted specimen. In the annelaed specimens, interstitial Frank loops, 60$^{\circ}$perfect disolations, 60$^{\circ}$dislocation dipoles, stacking faults, precipitates, perfect dislocation loops and <112> rodlike defects existed exclusively near in the Rp with various annealing temperature and time. From these results, it is concluded that extended secondary defects as well as the point defect clusters could be formed without annealing. Even at low temperature annealing such as 55$0^{\circ}C$, small interstitial Frank loops could be formed and precipitates were also formed by $700^{\circ}C$ annealing. The defect band annealed at 100$0^{\circ}C$ for 1 hr could be divided into two regions depending on the distribution of the secondary defects.

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Influence of indenter shape on nanoindentation: an atomistic study

  • Lai, Chia-Wei;Chen, Chuin-Shan
    • Interaction and multiscale mechanics
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    • v.6 no.3
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    • pp.301-316
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    • 2013
  • The influence of indenter geometry on nanoindentation was studied using a static molecular dynamics simulation. Dislocation nucleation, dislocation locks, and dislocation movements during nanoindentation into Al (001) were studied. Spherical, rectangular, and Berkovich indenters were modeled to study the material behaviors and dislocation activities induced by their different shapes. We found that the elastic responses for the three cases agreed well with those predicted from elastic contact theory. Complicated stress fields were generated by the rectangular and Berkovich indenters, leading to a few uncommon nucleation and dislocation processes. The calculated mean critical resolved shear stresses for the Berkovich and rectangular indenters were lower than the theoretical strength. In the Berkovich indenter case, an amorphous region was observed directly below the indenter tip. In the rectangular indenter case, we observed that some dislocation loops nucleated on the plane. Furthermore, a prismatic loop originating from inside the material glided upward to create a mesa on the indenting surface. We observed an unusual softening phenomenon in the rectangular indenter case and proposed that heterogeneously nucleating dislocations are responsible for this.

RADIATION-INDUCED DISLOCATION AND GROWTH BEHAVIOR OF ZIRCONIUM AND ZIRCONIUM ALLOYS - A REVIEW

Nano Mechanics Analysis of Dislocation Nucleation and Interaction (전위의 생성 및 상호작용에 관한 나노 역학 해석)

  • Lee, Young-Min;Kim, Sung-Youb;Jun, Suk-Ky;Im, Se-Young
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.537-541
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    • 2004
  • Molecular dynamics simulation of nanolithography by AFM is conducted to study nucleation of various defects, and their subsequent development and interactions as well. During nanolithography via AFM, dislocation loops are emitted along the top surface, and resourceful defect interactions such as, formation of voids chain via the motion of a jog, and creations of extended nodes and Lomer-Cottrell Lock are observed.

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Characterization of the structural defects in the dendritic web-grown silicon ribbon (Dendritic web으로 성장된 규소 결정속의 결함 규명)

  • Kim, Young-Kwan
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.3
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    • pp.276-283
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    • 1994
  • The dislocation configuration in web-grown silicon ribbon was investigated using chemical etching techniques. The presence of dislocation loops on twin planes is observed and acounted for by self-interstitial condensation. The interstitials were either quenched in, due to the rapid cooling of the ribbon from the solidification temperatures, or produced by oxide precipitation on the twin plane. Very large faulted loops of mm size were also observed.

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Dislocation-particle Interaction in Precipitation Strengthened Ni3(Al, Cr)-C (석출강화된 Ni3(Al, Cr)-C계에서의 전위-석출입자간의 상호작용)

  • Han, Chang-Suck
    • Journal of the Korean Society for Heat Treatment
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    • v.10 no.1
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    • pp.55-62
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    • 1997
  • The morphology of deformation induced dislocations in polycrystalline $Ni_3$(Al, Cr) containing $M_{23}C_6$ precipitates has been investigated in terms of transmission electron microscopy(TEM). Fine Polyhedral precipitates of $M_{23}C_6$ appeared in the matrix by aging at temperatures around 973 K after solution annealing at 1423 K. TEM examination revealed that the $M_{23}C_6$ phase and the matrix lattices have a cube-cube orientation relationship and keep partial atomic matching at the {111} interface. After deformation at temperature below 973 K, typical Orowan loops were observed surrounding the $M_{23}C_6$ particles. At higher deformation temperatures, the Orowan loops disappeared and the morphology of dislocations at the particle-matrix interfaces suggested the existence of attractive interaction between dislocations and particles. The change of the interaction modes between dislocation and particles with increasing deformation temperature can be considered as a result of strain relaxation at the interface bet ween matrix and particles.

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