• Analytical Science and Technology
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• v.6 no.5
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• pp.515-520
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• 1993

By the real use of Rene 80 cast blades at high temperature ${\gamma}^{\prime}$ precipitates in the matrix(${\gamma}$) mainly due to the operating temperature. These precipitates play main role for strenthening of the blades. Generally known that dislocation density increases due to ${\gamma}-{\gamma}^{\prime}$ mismatch by the generation and growth of the precipitates, because the lattice parameter of ${\gamma}^{\prime}$ is higher than that of ${\gamma}$. These lattice parameters of ${\gamma}$ and ${\gamma}^{\prime}$ are determined through the CBED(Convergent Beam Electron Diffraction) method by STEM(Scanning Transmission Electron Microscope) in this work. And also studied, whether and how much the dislocation density increases by the generation and growth of the precipitates.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.990-994
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• 2005

MBE growth conditions such as growth temperature, flux ration and growth rate for II-VI compound semiconductor growth has been studied. The growth temperature, flux ration and growth rate were tentatively controlled to 290$^{\circ}C$, 2, and 0.6 ${\mu}m$/h, respectively. From AFM result, relatively rough surface (RMS ${\sim}$ 2.9 nm) was observed. It was regarded as an indication of low growth temperature and high growth rate. XRD measurement shows that the film is relaxed, also the series of XRD measurements of different diffraction planes such as (002), (004), (115), (006) diffractions were performed to calculate the dislocation density in the film. The calculated dislocation density was found to be 8.30${\times}10^8$ dis/cm$^2$ which is compatible to the previous results.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.223.1-223.1
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• 2013

Since sapphire single crystal is one of the materials that have excellent mechanical and optical properties, the single crystal is widely used in various fields, and the demand for the use of substrate of LED devices is increasing rapidly. However, crystal defects such as dislocations and stacking faults worsen the properties of the single crystal intensely. When sapphire wafer of single crystal is used as LED substrate, especially, crystal defects have a strong influence on the characteristics of a film deposited on the wafer. In such a case quantitative assessment of the defects is essential, and the evaluation technique is now becoming one of the most important factors in commercialization of sapphire wafer. Wet etching is comparatively easy and accurate method to estimate dislocation density of single crystal because etching reaction primarily takes place where dislocations reached crystal surface which are chemically weak points, and produces etch pit. In the present study, the formation behavior of etch pits and etching time dependence were studied systematically. Etch pit density(EPD) analysis using optical microscope was also conducted and measurement uncertainty of EPD was studied to confirm the reliability of the results. EPDs and measurement uncertainties for 4 inch sapphire wafers were analyzed in terms of 5 and 21 points EPD readings. EPDs and measurement uncertainties in terms of 5 points readings for 4 inch wafers were compared by 2 organizations. We found that the average EPD value in terms of 5 points readings for a 4 inch sapphire wafer may represent the EPD value of the wafer.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.19-24
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• 2005

For the good combination of high-temperature strength, toughness and creep property, $9-12\%$ chromium steels are often used for gas turbine compressors, steam turbine rotors, blade and casing. In this study, the correlation of microstructural evolution and mechanical properties was investigated fur the specimens heat-treated at 600, 650 and $700^{\circ}C$ for 1000, 3000 and 5000 hrs. The microstructure of as-received specimen was tempered martensite with a high dislocation density, small sub-grains and fine secondary phase such as $M_23C_6$. Aging for long-time at high temperature caused the growth of martensite lath and the decrease of dislocation density resulting in the decrease in strength. However, the evolution of secondary phases had influence on hardness, yield strength and impact property. In the group A specimen aged at $600^{\circ}C\;and\;650^{\circ}C$, Laves phase was observed. The Laves phase caused the increase of the hardness and the decrease of the impact property. In addition, the abrupt growth of secondary phases caused decrease of the impact property in both A and B group specimens.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.3
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• pp.107-112
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• 2019

In order to investigate the effect of plastic deformation and annealing process parameters on strength and electrical conductivity of Cu-Fe alloys, Cu-10wt%Fe, Cu-15wt%Fe alloys were drawn up to ${\eta}=4$ and annealed in the temperature range of $300^{\circ}C$ to $700^{\circ}C$, followed by measurements of tensile strength and electric conductivity. As draw strain increases, tensile strength increases while electrical conductivity decreases. These observations result from reduction of dislocation density and decrease in Fe fiber spacing. Raising annealing temperature brought about decrease of tensile strength and increase of electrical conductivity up to $500^{\circ}C$, being followed by decreasing above $500^{\circ}C$. Such results are thought to be caused by decrease of dislocation density below $500^{\circ}C$ and rapid solubility increase of Fe in Cu above $500^{\circ}C$. For the purpose of obtaining both high strength and high conductivity, annealing process should be incorporated just prior to reaching to final draw strain. For Cu-10wt%Fe alloy, the tensile strength 706.9 MPa and the electrical conductivity 54.34%IACS were obtained through the processes of drawing up to ${\eta}=3$, annealing at $500^{\circ}C$ for 1 hour and additional drawing up to total strain of ${\eta}=4$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.582-586
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Journal of the Korean institute of surface engineering
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• v.35 no.5
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• pp.289-294
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• 2002

ZnTe films have been grown on (100) GaAs substrate with two representative problems. The one is lattice mismatch, the other is thermal expansion coefficients mismatch of ZnTe /GaAs. It claims here, the relationship of film thickness and defects distribution with (100) ZnTe/GaAs using hot wall epitaxy (HWE) growth was investigated by transmission electron microscopy (TEM). It analyzed on the two-sort side using TEM with cross-sectional transmission electron microscopy (XTEM) and high-resolution electron microscopy (HREM). Investigation into the nature and behavior of dislocations with dependence-thickness in (100) ZnTe/ (100) GaAs hetero-structures grown by transmission electron microscopy (TEM). This defects range from interface to 0.7 $\mu\textrm{m}$ was high density, due to the large lattice mismatch and thermal expansion coefficients. The defects of low density was range 0.7$\mu\textrm{m}$~1.8$\mu\textrm{m}$. In the thicker range than 1.8$\mu\textrm{m}$ was measured hardly defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.202-206
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• 2010

Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.

• Transactions of Materials Processing
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• v.27 no.3
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• pp.177-183
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• 2018

The influence of electric current on the springback characteristics of AZX311 magnesium alloy and martensitic steel after V-bending test is investigated. Various pulsed electric currents are applied into the specimens followed by a V-bending test, and the changes in the springback angle are measured. In order to evaluate not only the thermal effect but also the athermal effect of electric current on the springback angle, the temperature rises resulting from the applied electric current are measured for all test conditions. As a result, it was found that the springback is significantly decreased as the current density increases. As for the martensitic steel, since the dislocation recovery immoderately occurs at a high electric current density condition of $80A/mm^2$, the optimal current density condition should be required.

• Laser Solutions
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• v.14 no.4
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• pp.14-20
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• 2011

The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.