• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Transactions of Materials Processing
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• v.18 no.6
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• pp.482-487
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• 2009

A finite element based microstructural modeling for the size dependent strengthening of particle reinforced aluminum composites is presented. The model accounts explicitly for the enhanced strength in a discretely defined "punched zone" around the particle in an aluminum matrix composite as a result of geometrically necessary dislocations developed through a CTE mismatch. The density of geometrically necessary dislocations is calculated considering volume fraction of the particle. Results show that predicted flow stresses with different particle size are in good agreement with experiments. It is also shown that 0.2% offset yield stresses increases with smaller particles and larger volume fractions and this length-scale effect on the enhanced strength can be observed by explicitly including GND region around the particle. The strengths predicted with the inclusion of volume fraction in the density equation are slightly lower than those without.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.96-102
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• 2020

In this paper, AlN epilayers on 6H-SiC (0001) substrate are grown by mixed source hydride vapor phase epitaxy (MS-HVPE). AlN epilayer of 0.5 ㎛ thickness was obtained with a growth rate of 5 nm per hour. The surface of AlN epilayer grown on 6H-SiC (0001) substrate was investigated by field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS). Dislocation density was considered through HR-XRD and related calculations. A fine crystalline AlN epilayer with screw dislocation density of 1.4 × 10⁹ cm^-2 and edge dislocation density of 3.8 × 10⁹ cm^-2 was confirmed. The AlN epilayer on 6H-SiC (0001) substrate grown by using the mixed source HVPE method could be applied to power devices.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.92-98
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• 2011

The influence of the cooling condition after solution treatment on the high temperature fatigue resistance of 23Cr-26Ni heat resistant steel was investigated. Two different cooling conditions were applied to the steel after solution treatment at $1200^{\circ}C$ for 3 hours. One specimen was water quenched immediately after the solution treatment. The other one was furnace cooled at a rate of $0.5^{\circ}C/min$ down to $750^{\circ}C$ after the solution treatment. Then, both specimens were aged at $750^{\circ}C$ for 5 hours. Under two different heat treatment conditions, the low cycle fatigue (LCF) test was performed at $600^{\circ}C$ and room temperature (RT). Only cyclic hardening continued from the beginning until fracture at all strain amplitudes during LCF at $600^{\circ}C$. This phenomenon was attributed to the increase in the dislocation density due to cyclic deformation, which resulted in the interaction between the newly created dislocations and precipitates. Cyclic hardening followed by saturation and cyclic softening was observed at RT. Cyclic softening was attributed to the dislocation annihilation rate exceeding the dislocation generation rate. Other probable factor for cyclic softening was some cavities formed around grain boundaries after 20 cycles. WQ and FC have a similar LCF behavior at RT and $600^{\circ}C$ as shown in the cyclic stress response curves.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.349-356
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• 1994

For the deformation, life time prediction and improvement of the life time in high temperature materials it's very important to know the mechanism of deformation. For these mechanisms the dislocation loop models of Orlova et al. and Mills et al. are used often now. But they show controversial differencies, even if they have unertaken similar experimental tests with the same alloy of A1-5.5at.% Mg. In this work also the similiar tests of them have done under the same temperature of 573 K ; (1) The specimen was deformed by $\sigma$= 30MPa and $\varepsilon$=0.03. (2) Direct after creep deformation of $\sigma$= 30MPa and $\sigma$= 0.03 the stress reduction tests to 15, 10 and OMPa have been performed. (3) To study the loop models dislocation structure and dislocation density ( p ) have been observed.

• Journal of Korea Foundry Society
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• v.40 no.4
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• pp.118-127
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• 2020

Microstructural evolution during a heat treatment and high-temperature tensile properties have been investigated in conventionally cast CM247LC. In as-cast specimens, MC carbides with high amounts of Ta, Ti, Hf, and W were found to exist in the interdendritic regions, and γ' was observed in the form of cubes and octocubes prior to decomposition into cubes. In the heat-treated condition, some portion of eutectic γ-γ' remained, and uniform cubic γ' was observed in both interdendritic regions and dendrite core. Three types of carbides with different stoichiometries and compositions were found at the grain boundaries. MC carbides with high Hf contents were observed in the vicinity of eutectic γ-γ'. The highest tensile strength value was found at 750℃, whereas the greatest ductility appeared at 649℃. The effect of the temperature on the tensile properties was closely related to the dislocation structure. With increase in the test temperature, the density of dislocations inside γ' decreased, whereas that in the γ matrix increased. Stacking faults generated in γ' at 750℃ had a strengthening effect, whereas thermally activated dislocation motion at a high temperature was considered to have the opposite effect.

• Tribology and Lubricants
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• v.38 no.3
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• pp.73-83
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• 2022

This paper is concerned with an analysis of a surface edge crack emanated from a sharp contact edge. For a geometrical model, a square wedge is in contact with a half plane whose materials are identical, and a surface perpendicular crack initiated from the contact edge exists in the half plane. To analyze this crack problem, it is necessary to evaluate the stress field on the crack line which are induced by the contact tractions and pseudo-dislocations that simulate the crack, using the Bueckner principle. In this Part I, the stress filed in the half plane due to the contact is re-summarized using an asymptotic analysis method, which has been published before by the author. Further focus is given to the stress field in the half plane due to a pseudo-edge dislocation, which will provide a stress solution due to a crack (i.e. a continuous distribution of edge dislocations) later, using the Burgers vector. Essential result of the present work is the corrective functions which modify the stress field of an infinite domain to apply for the present one which has free surfaces, and thus the infiniteness is no longer preserved. Numerical methods and coordinate normalization are used, which was developed for an edge crack problem, using the Gauss-Jacobi integration formula. The convergence of the corrective functions are investigated here. Features of the corrective functions and their application to a crack problem will be given in Part II.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.2
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• pp.243-251
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• 1989

Assuming plastic zones spreading out on each slip plane of the two materials under out-of-plane shear loading, the size of each plastic zone is computed. The effect of the different frictional shear stresses in the two materials on the size of each plastic zone and the relative displacement at the crack tip are investigated. The relation between the J-integral in this model and the relative displacement at the crack tip is also obtained.

• Journal of Korea Foundry Society
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• v.15 no.5
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• pp.514-522
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• 1995

The microstructural evolution with isothermal stirring during semi-solid state processing of hypoeutectic Al-6.2wt%Si alloy was studied. Substructure of the individual primary solid particle in the slurry was investigated through transmission electron microscopy(TEM). Formation of subgrain boundaries on the rheocast Al-6.2wt%Si alloy is observed and the misorientation between the grains is shown typically under 2 degrees by analyzing selected area diffraction (SAD) and convergent beam electron diffraction (CBED) patterns. The existence of high angle grain boundaries are also observed in the alloy. Based upon these observations, mechanisms for the primary particles fragmentation are considered. With isothermal stirring, the dislocation density increases, and the evolution of dislocation cell structure takes place, which is interpreted as a process of achieving uniform deformation by dynamic recovery under applied shear stress.

• Korean Journal of Materials Research
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• v.24 no.12
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• pp.645-651
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• 2014

GaN is most commonly used to make LED elements. But, due to differences of the thermal expansion coefficient and lattice mismatch with sapphire, dislocations have occurred at about $109{\sim}1010/cm^2$. Generally, a low temperature GaN buffer layer is used between the GaN layer and the sapphire substrate in order to reduce the dislocation density and improve the characteristics of the thin film, and thus to increase the efficiency of the LED. Further, patterned sapphire substrate (PSS) are applied to improve the light extraction efficiency. In this experiment, using an AlN buffer layer on PSS in place of the GaN buffer layer that is used mainly to improve the properties of the GaN film, light extraction efficiency and overall properties of the thin film are improved at the same time. The AlN buffer layer was deposited by using a sputter and the AlN buffer layer thickness was determined to be 25 nm through XRD analysis after growing the GaN film at $1070^{\circ}C$ on the AlN buffer CPSS (C-plane Patterned Sapphire Substrate, AlN buffer 25 nm, 100 nm, 200 nm, 300 nm). The GaN film layer formed by applying a 2 step epitaxial lateral overgrowth (ELOG) process, and by changing temperatures ($1020{\sim}1070^{\circ}C$) and pressures (85~300 Torr). To confirm the surface morphology, we used SEM, AFM, and optical microscopy. To analyze the properties (dislocation density and crystallinity) of a thin film, we used HR-XRD and Cathodoluminescence.