• Journal of the Korean Society of Combustion
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• v.9 no.3
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• pp.27-35
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• 2004

Diode laser absorption sensors are advantageous because they may provide fast, sensitive, absolute, and selective measurements of species concentration. These systems are very attractive for practical applications owing to its compactness, resonable cost, robustness, and ease of use. In addition, diode lasers are fiber-optic compatible and thus enable simultaneous measurements of multiple species along a line-of-sight. Recent advances of room-temperature, near-IR and visible diode laser sources for telecommunication, optical data storage applications make it possible to be applied for combustion diagnostics based on diode laser absorption spectroscopy. Therefore, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor systems are now appearing for variety of applications. The objectives of this research are to develope a new gas sensing system and to verify feasibility of this system. Wavelength and power characteristics as a function of injection current and temperature are experimentally found out. Direct absorption spectroscopy has been demonstrated in these experiments and has a bright prospect to this diode laser system.

• Journal of IKEEE
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• v.19 no.1
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• pp.94-100
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• 2015

In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.139-142
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• 2003

In this paper, we consider the factors that affect a conversion loss performance in designing a single balanced diode mixer integrated with IRF(Image Reject Filter), based on the embedded electrical wavelength placed between the IRF and mixer, diode matching and LO drive amplifier. To evaluate the conversion loss performance, we suggest two types of a single balanced mixer using 90 degree branch line coupler, microstrip line and schottky diode. One is only mixer and the other is integrated with IRF and LO drive amplifier. The measured results of a single balance diode mixer integrated IRF show the conversion loss of 8.5 dB and the flatness of 1 dB p-p from 21.2 GHz to 22.6 GHz with 10 dBm LO. The measured input PI dB and IIP3 are 7 dBm and 15 dBm respectively under the nominal LO power level of 10dBm. The LO/RF and LO/IF isolation are 22 dB and 50 dB, respectively.

• Journal of Mechanical Science and Technology
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• v.16 no.11
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• pp.1550-1557
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• 2002

Diode laser sensor for measuring gas temperature and species concentration in combustion chamber was developed using 2.0 tim distributed feed back lasers. To evaluate the measurement sensitivity of diode laser sensor system, CO2 survey spectra near 2.0 Um were measured and compared with the calculated one. This diode laser absorption sensor was applied to measure gas temperatures in a premixed flat flame of CH$_4$-air mixture. Experimental results were in good agreement with the values by an R-type thermocouple within 6.12%. In addition, successful demonstration of measurement of gas temperature and species concentration in a soot flame showed the promising possibility of diode laser absorption sensors for practical combustion system with non-intrusive method.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1231-1235
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• 2004

The needs of micro scale thermal detecting technique are increasing in biology and chemical industry. For example, Thermal finger print, Micro PCR(polymer chain reaction), ${\mu}TAS$ and so on. To satisfy these needs, we developed a DTSA(Diode Temperature Sensor Array) for detecting and controlling the temperature on small surface. The DTSA is fabricated by using VLSI technique. It consists of 32 ${\times}$ 32 array of diodes (1,024 diodes) for temperature detection and 8 heaters for temperature control on a 8mm ${\times}$ 8mm surface area. The working principle of temperature detection is that the forward voltage drop across a silicon diode is approximately proportional to the inverse of the absolute temperature of diode. And eight heaters ($1K{\Omega}$) made of poly-silicon are added onto a silicon wafer and controlled individually to maintain a uniform temperature distribution across the DTSA. Flip chip packaging used for easy connection of the DTSA. The circuitry for scanning and controlling DTSA are also developed

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.4
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• pp.30-36
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• 2004

The development of LD(Laser Diode) tester and its control system based on the graphical programming language(LabVIEW) is addressed. The ill tester is used to check the optic power and the optic spectrum of the LD Chip. The emitter size of LD chip and the diameter of the Detector(optic fiber and photo diode) are very small, therefore the test device needs high accuracy. But each motion part of the test device could not accomplish high accuracy due to the limit of the mechanical performance. So, an image processing with machine vision is proposed to compensate for the error. By adopting our method we can reduce the error of position within $\pm$5$\mu\textrm{m}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.347-348
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• 2006

This paper performed the basic study for developing the Photodynamic Therapy Equipment for medical treatment. The equipment have been manufactured by using the High Bright Light Emitting Diode and TLC5941 integrated circuit. As a result, 630nm Light Emitting Diode Module was made for the optimization of irradiation condition. And we confirmed the current change according to increase of the level of Light Emitting Diode Module.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.415-420
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• 2007

Generally, a diode package consists of the synthetic resin that has good durability but low thermal conductivity. The surface mounted type fast recovery diode was fabricated by using ceramic package. Its main manufacture processes are composed of soldering, sillicon coating and side termination. And it has various advantages that diode is small, easy manufacture and fast cooling. The electric characteristics of the diode such as reverse recovery time, breakdown voltage, forward voltage, and leakage current were 5.28 ns, 1322 V, 1.08 V, $0.45\;{\mu}A$, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.416-423
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• 2012

Using Ansoft HFSS(High Frequency Structure Simulator) and Serenade(circuit simulator), multilayer LPF and RF diode switch for GSM were designed. Diodes were transformed the inductor and capacitor in Tx and Rx for the simulation of equivalent circuit, respectively. In particular, the design of the simulation for multilayer RF diode switch was carried out with considering the variance of device and contraction percentage.