• Journal of Electrochemical Science and Technology
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• v.14 no.4
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• pp.326-332
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• 2023

The high cost of Si-based solar cells remains a substantial challenge to their widespread adoption. To address this issue, it is essential to reduce the production cost of solar-grade Si, which is used as raw material. One approach to achieve this is Si electrodeposition in molten salts containing Si sources, such as SiO₂. In this study, we present the pulse electrodeposition of Si in molten CaCl₂ containing SiO₂ nanoparticles. Theoretically, SiO₂ nanoparticles with a diameter of less than 20 nm in molten CaCl₂ at 850℃ have a comparable diffusion coefficient with that of ions in aqueous solutions at room temperature. However, we observed a slower-than-expected diffusion of the SiO₂ nanoparticles, probably because of their tendency to aggregate in the molten CaCl₂. This led to the formation of a non-uniform Si film with low current efficiency during direct current electrodeposition. We overcome this issue using pulse electrodeposition, which enabled the facile supplementation of SiO₂ nanoparticles to the substrate. This approach produced a uniform and thick electrodeposited Si film. Our results demonstrate an efficient method for Si electrodeposition in molten CaCl₂ containing SiO₂ nanoparticles, which can contribute to a reduction in production cost of solar-grade Si.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.510-513
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• 2003

Our Zn diffusion into n-type $GaAs_{0.40}P_{0.60}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.112-117
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• 1998

TiN has been investigated as a good candidate for a diffusion barrier of Cu. Therefore, in this study, the grain boundary diffusion of Cu in TiN film was investigated by X-ray photoelectron spectroscopy(XPS). In general, TiN has a columnar grain structure. In the relatively lower temperature, less than 1/3 of the melting point, it was observed that Cu diffused into TiN mainly along the grain boundaries of TiN. The grain size of TiN was measured by atomic force microscope (AFM). In order to estimate the grain boundary diffusion constants, we used the modified surface accumulation method. The activation energy, $Q_b$ was 0.23 eV, and the diffusivity, $D_{bo}$ was $5.5\times10^{-12{\textrm{cm}^2$/sec.

• Proceedings of the Korea Concrete Institute Conference
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• 2001.11a
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• pp.555-558
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• 2001

Carbonation of concrete decreases durability of RC structures due to failure of passive film of rebar. Therefore, expecting carbonation depth is a governing parameter of service life prediction for RC structures. This study attempt to estimate carbonation depth quantitatively by using equivalent effective diffusion coefficient of $CO_2$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.2
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• pp.15-18
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• 1979

Deposited film of a transition metal, Ti was diffused into LiNbO3 crystals to form integrated optical waveguides. By suppressing L O out -diffusion, single-mode waveguides could be constructed. Measurements on characteristics were performed by using the prise coupling technique and a He-Ne laser. ( λ = 0.6328 $\mu$m)

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.281-286
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• 2002

In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.593-598
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• 2013

In this study, we have evaluated the water absorption phenomenon of photoresist dry film, which is commonly used to build circuits on PCB (Printed Circuit Board) by photolithography, by using ATR-FTIR (Attenuated Total Reflectance-Fourier Transform Infrared). We have firstly observed significant change in fracture mode of dry film with respect to temperature and humidity, which we assumed the material transition from ductile to brittle. Secondly, we have established the process of absorption test for determining the diffusion coefficients of water into the dry film both with gravimeter and ATR-FTIR. We have successfully calculated the diffusion coefficients for each environmental conditions from the results which we achieved by gravimeter and ATR-FTIR. Compared to the gravimeter which is a conventional method for absorption test, the ATR-FTIR method in this study has been found to be very easy to use and have the same accuracy as gravimeter. Moreover, we are expecting to use the ATR-FTIR as an appropriate method to study the absorption phenomena related to any kinds of solvent and polymer system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.52-57
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• 2006

Precision thin film resistors using evanohm R alloy were fabricated by do magnetron sputtering method. The physical and electrical properties of the resistors were studied after treatment of thermal annealing. The crystallization of the film was increased as the annealing temperature increase. Diffusion and oxidation of Cr and Al elements were occurred into the film surface. The minimum TCR values of 10.46 ppm/$^{\circ}C$ and 10.65 ppm/$^{\circ}C$ were measured at the annealing temperatures of $200^{\circ}C$ and $300^{\circ}C$, respectively. We are conducting additional studies to improve characteristics of our resistors for practical device application.