• Journal of Institute of Control, Robotics and Systems
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• v.13 no.3
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• pp.249-255
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• 2007

Under the situation of a fire, it is difficult for a rescue robot to use sensors such as vision sensor, ultrasonic sensor or laser distance sensor because of diffusion, refraction or block of light and sound by dense smoke. But, braille blocks that are installed for the visaully impaired at public places such as subway stations can be used as a map for autonomous mobile robot's localization and navigation. In this paper, we developed a laser sensor stan device which can detect braille blcoks in spite of dense smoke and integrated the device to the robot developed to carry out rescue mission in various hazardous disaster areas at KIST. We implemented MCL algorithm for robot's attitude estimation according to the scanned data and transformed a braille block map to a topological map and designed a nonlinear path tracking controller for autonomous navigation. From various simulations and experiments, we could verify that the developed laser sensor device and the proposed localization method are effective to autonomous tracking of braille blocks and the autonomous navigation robot system can be used for rescue under fire.

• Clean Technology
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• v.28 no.3
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• pp.227-231
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• 2022

The demand for high-voltage power devices is rising in various industries, but especially in the transportation industry due to autonomous driving and electric vehicles. IGBT module parts of 3.3 kV or more are used in the power propulsion control device of electric vehicles, and the procurement of these parts for new construction and maintenance is increasing every year. In addition, research to optimize high-voltage IGBT parts is urgently required to overcome their very high technology entry barrier. For the development of high-voltage IGBT devices over 3.3 kV, the resistivity range setting of the wafer and the optimal conditions for major unit processes are important variables. Among the manufacturing processes to secure the optimal junction depth, the optimization of the diffusion process, which is one step of the unit process, was examined. In the diffusion process, the type of gas injected, the injection time, and the injection temperature are the main variables. In this study, the range of wafer resistance (Ω cm) was set for the development of high voltage IGBT devices through unit process simulation. Additionally, the well drive in (WDR) condition optimization of the diffusion process according to temperature was studied. The junction depth was 7.4 to7.5 ㎛ for a ring pattern width of 23.5 to25.87 ㎛, which can be optimized for supporting 3.3 kV high voltage power devices.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.26 no.6
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• pp.409-413
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• 2013

In this paper, we device stress-diffusion full coupling multiscale analysis method for battery electrode simulation. In proposed method, the diffusive and mechanical properties of electrode material depend on Li concentration are estimated using density function theory(DFT) simulation. Then, stress-diffusion full coupling continuum formulation based on finite element method(FEM) is constructed with the diffusive and mechanical properties calculated from DFT simulation. Finally, silicon nanowire anode charge and discharge simulations are performed using the proposed method. Through numerical examples, the stress-diffusion full coupling method shows more resonable results than previous one way continuum analysis.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1552-1557
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• 2004

Characteristics diffusion time of viscoelastic fluids are determined experimental results of terminal velocity by using the falling ball viscometer. The characteristics diffusion time of viscoelastic fluids are determined with help of the sphere device which is installed to return the dropped sphere from the bottom of the test cylinder without disturbing the working fluids. Terminal velocity of th sphere the reason why experimental of characteristics diffusion time that it is have an effect on the time interval of the measuring. Viscous of the fluid the temperature changed in order to have an effect on temperature and terminal velocity of the ball it becomes larger the possibility of knowing. A result of visualization for flow phenomena of around the sphere uses the PIV and the density of the polymer solution which it appears 2000wppm is to a case which is the right and left becomes symmetry to be it will be able to confirm and according to the time interval, to observed velocity vector of same at first drop the sphere.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.37-45
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• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.394-398
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• 2007

A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.391-396
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• 2010

The pn junction for solar cell was prepared on p-type Si wafer by the furnace using the $POCl_3$ and oxygen mixed precursor to research the characteristic of interface at pn junction. The sheet resistance was decreased in accordance with the increasing the diffusion process time for n-type doping on p-type Si wafer. The electron affinity at the interface in the pn junction was decreased with increasing the amount of n-type doping and the sheet resistance also decreased. Consequently, the drift current due to the generation of EHP increased because of low potential barrier. The efficiency and fill factor were increased at the solar cell with increasing the diffusion process time.

• YAKHAK HOEJI
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• v.34 no.3
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• pp.161-165
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• 1990

An automated, simple, and reliable method was developed for determining in vitro drug release rate from transdermal delivery dosage forms. The patch is held in position in the heating block by sandwiching it between the middle plate and the bottom plate of diffusion cell. The dissolution profile of the commercially available transdermal scopolamine patch was determined over a 72-h period, and the results were compared with those obtained with other methods; paddle-over-disk method, reciprocating method, and diffusion cell method. It was demonstrated that the flow-through method is equivalent in terms of release rate profile and accumulated released drug amount over the lifetime of the dosage form tested. Also this method is simple, reliable and reproducible. Therefore, this technique can be used in a quality control for assuring product uniformity.

• Corrosion Science and Technology
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• v.16 no.4
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• pp.209-225
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• 2017

Development of high strength steel requires proper understanding of hydrogen behavior since the higher the steel strength the greater the susceptibility of hydrogen assisted cracking. This paper provides a brief but broad overview on hydrogen entry and transport behavior of high-strength ferritic steels. First of all, hydrogen absorption, diffusion and trapping mechanism of the steels are briefly introduced. Secondly, several experimental methods for analyzing the physical/chemical nature of hydrogen uptake and transport in the steels are reviewed. Among the methods, electrochemical permeation technique utilized widely for evaluating the hydrogen diffusion and trapping behavior in metals and alloys is mainly discussed. Moreover, a modified permeation technique accommodating the externally applied load and its application to a variety of steels are intensively explored. Indeed, successful utilization of the modified permeation technique equipped with a constant load testing device leads to significant academic progress on the hydrogen assisted cracking (HAC) phenomenon of the steels. In order to show how the external and/or residual stress affects mechanical instability of steel due to hydrogen ingress, the relationship among the microstructure, hydrogen permeation, and HAC susceptibility is briefly introduced.