• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.237-238
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• 2008

Electrical properties of Pd/Zn/Pd/Au contacts to p-InP were investigated as function of the V/III ratio of p-InP. P-type InP was made by the Zn diffusion into InP and activation process with rapid thermal annealing (RTA) measurement. After activation, the hole concentration was two orders of magnitude higher than that of the sample having only diffusion process. According to transmission line method (TLM) results, the specific contact resistance of p-InP was lower as used InP having the lower V/III ratio. The experimental results represent that the diffusion of Zn in undoped InP deeply related to the equilibrium between interstitials and substitutional Zn is established via indium interstitials.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.429-437
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• 2017

Micro hollow plate type silica with low refraction properties was synthesized and its hollow structure was applied as an optical structure to develop a light diffusion material that simultaneously satisfies the requirements of good light diffusibility, high transmissibility, and high luminance. The developed light diffusion material was applied to a light diffusion film and the film's optical properties were assessed. Hollow silica was synthesized by precipitation method using $Mg(OH)_2$ core particles, sodium silicate, and ammonium sulfate as the silica precursors. The concentration of the silica precursor was adjusted to control hollow silica shell thickness. The total light transmittance of the light diffusion film composed of the hollow silica was 94.55%, which was 4.57% higher than that of the PC film; new film's haze was 71.20%, which was 70.9% higher. Furthermore, the luminance increased by 5.34% compared to that of the light source. The reason for the results is not only that the micro plate type hollow silica, which has a low refractive property, played a role in reducing the difference in refractive index between the medium boundaries, but also that there was a light-concentrating effect due to the changing of light paths to the front direction inside the hollow structure. Optical simulation verified the enhanced optical properties when hollow silica was applied to the light diffusion film.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.84-93
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• 1998

Planar graded index optical waveguides have been formed by Ag$^{+}$ ion exchange in the BK7 optical glass. The experimental results of diffusion and modal characteristics of Ag$^{+}$-Na$^{+}$ exchanged BK7 glass waveguides are presented. Measurements of the mode indices have been measured. We found the relations between the process and device parameters such as the diffusion depth and the square root of the diffusion time, diffusion coefficient and diffusion temperature, and diffusion ion concentration and surface index change. A theoretical gaussian function refractive index profile matched best with the measured data for all the guided modes. The empirical relations between the process and the device parameters are derived and subsequently used to formulate a systematic procedure for fabricating singlemode and multimode waveguides.uides.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.451-457
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• 2003

The silicon wafer is stable status at room temperature, but it is weak at high temperatures which is necessary for it to be fabricated into a power semiconductor device. During thermal diffusion processing, a high temperature produces a variety thermal stress to the wafer, resulting in device failure mode which can cause unwanted oxide charge or some defect. This disrupts the silicon crystal structure and permanently degrades the electrical and physical characteristics of the wafer. In this paper, the electrical characteristics of a single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of polyback was researched. The oxide quality was examined through capacitance-voltage characteristics, defect density and BMD(Bulk Micro Defect) density. It will describe the capacitance-voltage characteristics of the single oxide layer by semiconductor process and device simulation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.7
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• pp.36-41
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• 2018

An image intensifying device is equipment that makes weak objects visible in a dark environment, such as making nighttime bright enough to let objects be visually observed. It is possible to obtain a clear image by amplifying the light in the presence of a certain amount of weak light. However, in an extremely low-light environment, where even moonlight is not present, there is not enough light to amplify anything, and the sharpness of the screen deteriorates. In this paper, a method is proposed to improve image quality by using multiple filters and anisotropic diffusion for output noise of the image-intensifying device in extreme low-light environments. For the experiment, the output of the image-intensifying device was obtained under extremely low-light conditions, and signal processing for improving the image quality was performed. The configuration of the filters for signal processing uses anisotropic diffusion after applying a median filter and a Wiener filter for effective removal of salt-and-pepper noise and Gaussian noise, which constitute the main noise appearing in the image. Experimental results show that the improvement visually enhanced image quality. Both peak signal-to-noise ratio (PSNR) and SSIM, which are quantitative indicators, show improved values.

• Archives of Pharmacal Research
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• v.10 no.2
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• pp.88-93
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• 1987

Chitosan ($\beta$-D-glucosaminan) is chemically prepared from chitin (N-acetyl-$\beta$- D-glucosaminan) which is an unutilized natural resource. We now report on the suitability of the chitosan matrix for use as vehicles for the controlled release of drugs. Salicylic acid and aspirin were used as model drugs in this study. The permeation of salicylic acid in the chitosan membranes was determined in a glass diffusion cell with two compartments of equal volume. Drug release studies on the devices were conducted in a beaker containing 5% sodium hydroxide solution. Partition coefficient (Kd) value for acetate membrane (472) is much greater than that for fluoro-perchlorate chitosan membrane (282). Higher Kd value for acetate chitosan membrane appears to be inconsisstent with the bulk salicylic acid concentration. The permeability constants of fluoro-perchlorate and acetate chisotan membranes for salicylic acid were 3.139 ${\times}10^{-7}cm^2$ min up to 60 min and that of 30% aspirin in the devices was 4.739${\times}10^{-7}cm^2$sec upto 60 min. As the loading dose of aspirin in a chitosan device increased, water up-take of chitosan device increased, but in case of salicylic acid it decreased. The release rate increased with increase in the molecular volume of the drugs. Thses result suggest that the release mechanism may be controlled mainly by diffusion through pores.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• Journal of the Korean Society of Industry Convergence
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• v.4 no.3
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• pp.329-337
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• 2001

This simulator is developed for the analysis of a MOSFET based on Thermally Coupled Energy Transport Model(TCETM). The simulator has the ability to calculate not only stationary characteristics but also non - stationary characteristics of a MOSFET. It solves basic semiconductor devices equations including Possion equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using finite difference method. The conventional semiconductor device simulation technique, based on the Drift-Diffusion Model (DDM), neglects the thermal and other energy-related properties of a miniaturized device. I, therefore, developed a simulator based on the Thermally Coupled Energy Transport Model (TCETM) which treats not only steady-state but also transient phenomena of such a small-size MOSFET. In particular, the present paper investigates the breakdown characteristics in transient conditions. As a result, we found that the breakdown voltage has been largely underestimated by the DDM in transient conditions.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.