• Journal of the Optical Society of Korea
• /
• v.17 no.3
• /
• pp.269-274
• /
• 2013

The effect of diffusing substrate and pillow lenses on the outcoupling efficiency of organic light-emitting diodes (OLEDs) was studied by optical simulation based on the point-dipole model. The diffusing substrate included Mie scatterers by which the condition of total internal reflection could be broken. The finite-difference time-domain method was used to obtain the intensity distribution on the transparent electrode of an OLED, which was used as a light source to carry out a ray-tracing simulation of the OLED and the diffusing substrate. It was found that the outcoupling efficiency of the OLED was sensitive to the thickness of organic layers and could be increased by 21.0% by adopting a diffusing substrate in which Mie scatterers whose radius was $2.0{\mu}m$ were included at the density of $10^7mm^{-3}$ and by 65.5% by forming one pillow lens with the radius of 2 mm on the front surface of the glass substrate. This study revealed that the outcoupling efficiency could be improved by adopting diffusing substrate and pillow lenses along with the optimization of the thickness of each layer in the OLED.

• Journal of Information Display
• /
• v.13 no.4
• /
• pp.139-143
• /
• 2012

In this study, optical simulation was used to compare three optical structures that could be applied to the typical organic light-emitting diode to increase the outcoupling efficiency. These were spherical scattering particles (treated as Mie scatterers) embedded in the glass substrate, microlenses formed on the glass substrate, and a diffusing layer (DL) with a Gaussian scattering distribution function inserted between the indium tin oxide (ITO) and the glass substrate. It was found that the application of microlens array and that of scattering particles in the glass substrate exhibited similar enhancements in the outcoupling efficiency when the density and the refractive index of the scattering particles were optimized. The DL located at the interface between the glass and the ITO further enhanced the efficiency because it could further extract the trapped light in the waveguide mode. The appropriate combination of these three structures increased the outcoupling efficiency to about 42%, which is much greater than the typical values of 15-20% when there is no optical structure for light extraction.

• The Korean Journal of Ceramics
• /
• v.2 no.4
• /
• pp.184-187
• /
• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• Journal of the Semiconductor & Display Technology
• /
• v.21 no.4
• /
• pp.33-38
• /
• 2022

With an attempt to suppress the moiré phenomenon caused by the interference between the black matrix of a display panel and the metal grid of a camera, we have fabricated an anti-moiré filter using light diffusing particles (LDPs) with the average diameter of 20 ㎛. It is demonstrated that the anti-moiré filter coated on a glass substrate (370 mm × 470 mm) using a table slot-die coater reduces the moiré intensity to a great extent when the area covered by LDPs is 50%. To quantify the intensity of moiré phenomenon, we have measured the lightness ratio and found that it is reduced from 132.12 down to 105.71 by the filter. To find the optimum area covered by LDPs, we have performed ray tracing simulations using Mie scatters as a substitute for LDPs. From the simulated irradiation distribution, we have calculated the standard deviation (SD) and contrast ratio (CR) to evaluate the moiré strength. As expected, the SD and CR values decrease with increasing covered area by LDPs. However, there exists a trade-off between the transmittance of the filter and its capability of reducing the moiré intensity in determining the area covered by LDPs.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.189-189
• /
• 2016

In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2006.05a
• /
• pp.91-94
• /
• 2006

In this paper, in order to get micro or nano size optical patterns, an analytical and experimental investigation on a LGP (light guide plate) injection molding process has performed. The LGP, which diffusing and emitting the light from the CCFL or the LEDs to the panel front direction uniformly, typically has an under 1mm thick base substrate and numerous 60 to $170{\mu}m$ width and 6 to $10{\mu}m$ thick dot patterns on it. Generally, the small size LGPs, for mobile devices, have been and are being made of PMMA through the injection molding process. However, the substrate thickness and the dot pattern size are decreasing, it becomes hard to fill the micro to sub-micro cavities completely. To investigate the flow behavior of resin in micro/nano cavities and identify the characteristics of the LGP injection molding process, we carried out the flow analyses with respect to the variations of the substrate thickness, the dot pattern size and the pitch of a cavity.

• Journal of the Korean institute of surface engineering
• /
• v.41 no.4
• /
• pp.134-141
• /
• 2008

We have developed a numerical model for a remote ICP(inductively coupled plasma) system in 2D and 3D with gas distribution configurations and confirmed it by plasma diagnostics. The ICP source has a Cu tube antenna wound along a quartz tube driven by a variable frequency rf power source($1.9{\sim}3.2$ MHz) for fast tuning without resort to motor driven variable capacitors. We investigated what conditions should be met to make the plasma remotely localized within the quartz tube region without charged particles' diffusing down to a substrate which is 300 mm below the source, using the numerical model. OES(optical emission spectroscopy), Langmuir probe measurements, and thermocouple measurement were used to verify it. To maintain ion current density at the substrate less than 0.1 $mA/cm^2$, two requirements were found to be necessary; higher gas pressure than 100 mTorr and smaller rf power than 1 kW for Ar.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.12
• /
• pp.1356-1361
• /
• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.429-429
• /
• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.2
• /
• pp.170-174
• /
• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.