• International Journal of Advanced Culture Technology
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• v.3 no.1
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• pp.13-20
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• 2015

The self-cleaning properties of nano-zinc oxide on cotton fabrics have been investigated. The cotton fabric has been prepared by pad-dry method. The nano-zinc oxide was encapsulated in the polystyrene particle by mini-emulsion process prior used. The loading amount of zinc oxide particles into the mini-emulsion were various from 1% wt to 40%wt. The particles sizes of ZnO-encapsulated polystyrene mini-emulsion were determined using dynamic light scattering. It was showed that the particle size of the mini-emulsion was in the range of 124-205 nm. The topography and morphology of ZnO-encapsulated polystyrene which coated on cotton fabrics was observed using scanning electron microscopy. The crystal structure of ZnO-coated on cotton fabrics was explored by X-ray diffraction spectroscopy. The photocatalytic activities of zinc oxide were present through the self-cleaning properties. The presents of the zinc oxide on cotton fabrics significantly showed the improving of the self-cleaning properties under UV radiation.

• Journal of Powder Materials
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• v.25 no.5
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• pp.384-389
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• 2018

Nanoparticles of PbTe are prepared via chemical reaction of the equimolar aqueous solutions of $Pb(CH_3COO)_2$ and Te at $120^{\circ}C$. The size of the obtained particles is 100 nm after calcination in a hydrogen atmosphere. Dense specimens for the thermoelectric characterization are produced by spark plasma sintering of prepared powders at $400^{\circ}C$ to $500^{\circ}C$ under 80 MPa for 5 min. The relative densities of the prepared specimens reach approximately 97% and are identified as cubic based on X-ray diffraction analyses. The thermoelectric properties are evaluated between $100^{\circ}C$ and $300^{\circ}C$ via electrical conductivity, Seebeck coefficient, and thermal conductivity. Compared with PbTe ingot, the reduction of the thermal conductivities by more than 30% is verified via phonon scattering at the grain boundaries, which thus contributes to the increase in the figure of merit.

• Journal of Korean Port Research
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• v.6 no.1
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• pp.69-91
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• 1992

A new type of horizontal submerged break water or fixed structure to control waves near coastal area is introduced to focus wave energy before or behind it. Intentionally, the water depth near the structure is changed gradually to get a refraction and diffraction effect. The concentration of wave energy due to the structure was analyzed for the selected design of structure. The shape of the submerged structure in consideration is a circular combined with elliptical curve not to cause reflection of waves at the extreme edge of the structure but cause wave scattering. The direction of the structure against the incident wave is changed easily in the model Applying a regular wave train the following were examined. 1) whether a crescent plain submerged structure designed by the wave refraction theory can concentrate wave energy at a focal zone behind and before it without wave breaking phenomenon. 2) Location of maximum wave amplification factor in terms of the incident wave direction, wave period, etc. In any event the study would contribute to control waves near coastal area and to protect a beach from erosion without interruption of ocean view it is an useful study for the concentration of wave energy efficiently with the increase of wave height.

• Journal of Powder Materials
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• v.28 no.4
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• pp.325-330
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• 2021

In this study, a ZnS film of 8-mm thickness was prepared on graphite using a hot-wall-type CVD technique. The ZnS thick film was then hot isostatically pressed under different pressures (125-205 MPa) in an argon atmosphere. The effects of pressure were systematically studied in terms of crystallographic orientation, grain size, density, and transmittance during the HIP process. X-ray diffraction pattern analysis revealed that the preferred (111) orientation was well developed after a pressure of 80 MPa was applied during the HIP process. A high transmittance of 61.8% in HIP-ZnS was obtained under the optimal conditions (1010℃, 205 MPa, 6 h) as compared with a range of approximately 10% for the CVD-ZnS thick film under a 550-nm wavelength. In addition, the main cause of the improvement in transmittance was determined to be the disappearance of the scattering factor due to grain growth and the increase in density.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.11 no.3
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• pp.135-140
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• 1999

To simulate the wave transformation by an energy dissipation region, a numerical model is suggested by discretizing the elliptic mild-slope equation. Generalized conjugate gradient method is used as solution algorithm to apply parabolic approximation to open boundary condition. To demonstrate the applicabil-ity of the numerical procedure suggested, the wave scattering by a circular damping region is examined. The feature of reflection in front of the damping region is captured clearly by the numerical solution. The effect of the size of dissipation coefficient is examined for a rectangular damping region. The recovery of wave height by diffraction occurs very slowly with distance behind the damping region.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.341-350
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• 1996

The CdS thin films are grown on quartz plate by hot wall epitaxy. The source and substrate temperature is $590^{\circ}C$ and $400^{\circ}C$ respectively, and thickness of the film is $2.5\;\mu\textrm{m}$. Using extrapolation method of X-ray diffraction patterns for the CdS thin film, it was found hexagonal structure whose lattice constant a and c were $4.137\;{\AA}$ and $6.713\;{\AA}$, respectively. Hall effect on this sample was measured by the method of van der Pauw and studied on cattirer density and mobility depending on temperature. From hall data, the mobility was likely to be decreased by piezoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore the applicability as a photoconductive cell we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Cu vapor the photoconductive characteristics are the best. Then we obtained the sensitivity of 0.99, the value of pc/dc of $9.42{\times}10^{6}$, the MAPD of 318 mW, and the rise and decay time of 10 ms and 9 ms, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.366-376
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• 1997

$CdGa_2Se_4$, epilayer of tetragonal type are grown on Si(100) substrate by hot wall epitaxy method. The source and substrate temperature is $580^{\circ}C$ and $420^{\circ}C$ respectively, and the thickness of the film is 3 $\mu \textrm{m}$. The crystallihe structure of epilayers were investigated by double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Se vapor the photoconductive characteristics are best. Then we obtained the sensitivity of 0.98, the value of pc/dc of $9.62{\times}10^6$, the MAPD of 321 ㎽ and the rise and decay time of 9 ㎳ and 9.5 ㎳, respectively.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.319-328
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• 1994

Aluminium and titanium precursors containing $\beta$-diketonate ligands were used for the synthesis of polymeric sols of alumina and titania by sol-gel methods. To prepare polymeric sols by solgel processing, we synthesized modified precursors having chelating organic ligands. With these precursors it was found to be possible to control both hydrolysis and polycondensation reaction rates which resulted in ultrafine particles few nms of average size. The optimum molar ratio of acid to alkoxide for alumina sol was 0.3-0.4 and that of water to alkoxide &as 1. On the other hand, the corresponding ratios for titania sol were found be 0.25-0.20 and 1 respectively. Dynamic light scattering measurements indicated that the average particle size in both sols was in the order of few nms. SEM photographs were taken to observe crack-free and smooth surfaces of coated membranes after sintering at $450^{\circ}C$. Alumina coated membrane on a slide glass had about 4-4.5$\mu \textrm{m}$, thickness and titania coated one had 2-2.5$\mu \textrm{m}$, thickness. And according to TEM photographs, the grain size of titania was smaller than 30nm and that of alumina was in the range of few $\AA$s to 2nms. An X-ray diffraction study revealed that alumina was $\gamma$ phase and titania was anatase crystal.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.1
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• pp.35-41
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• 2004

This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.140-143
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• 2006

Single crystalline $CoFe_2O_4$ thin films on (100) MgO substrates were fabricated using a rf magnetron sputtering method. The deposited films were investigated for their crystallization by X-ray diffraction, Rutherford back-scattering spectroscopy and field emission scanning electron microscopy. When a cobalt ferrite film was deposited at the substrate temperature of $600^{\circ}C$, squared grains of about 200 nm were uniformly distributed in the film. However, the grains became irregular and their sizes also varied from 30 to 150 nm when the substrate temperature was $700^{\circ}C$. Hysteresis loops of a film deposited at $600^{\circ}C$ showed that the magnetically easy axis of the film was perpendicular to the substrate surface. Except for the squareness ratio, magnetic properties of the cobalt ferrite films grown by the present rf sputtering method were as good as those of the films prepared by a laser ablation method: The in-plane and perpendicular coercivities were 283 and 6800 Oe, respectively. As the thickness of the deposited film increased twice, the saturation magnetization became double but the coercivity remained unchanged. However, deposition of the Co ferrite films with a higher rf powder decreased the squareness ratio and the perpendicular coercivity of the films.