• KIEE International Transactions on Electrophysics and Applications
• /
• v.2C no.6
• /
• pp.281-286
• /
• 2002

The temperature accelerated dielectric breakdown strength of on-wafer low-k dielectric polymer films with thicknesses ranging from 94 nm to 1141 nm is investigated by using the current-voltage characteristic measurements with MIS structures. The temperature dependence of dielectric strength is demonstrated to be Arrhenious for all thicknesses. However, the activation energy is found to be strongly thickness dependent. It follows an exponential relationship rather than being a single value, i.e., the activation energy increase significantly as film thickness increases for the thickness below 500 nm, but it is almost constant for the thickness above 500 nm. This relationship suggests that the change of the activation energy corresponding to different film thickness is closely related to the temperature dependence of the electron trapping/detrapping process in polymer thin films, and is determined by both the trapping rate and the detrapping rate. Thinner films need less energy to form a conduction path compared to thicker films. Hence, it leads to smaller activation energy in thinner films, and the activation energy increases with the increase in film thickness. However, a nearly constant value of the activation energy is achieved above a certain range of film thickness, indicating that the trapping rate and detrapping rate is almost equal and eventually the activation energy approaches the value of bulk material.

• Journal of the Korean Vacuum Society
• /
• v.18 no.6
• /
• pp.453-458
• /
• 2009

SiOC film was deposited by the chemical vapor deposition using BTMSM and oxygen mixed precursor. The characteristic of SiOC film varied with increasing of the gas flow rate ratios. The dielectric constant was obtained by C-V measurement using the structure of metal/SiOC film/Si. The space effect due to the steric hindrance between alkyl group at terminal bond of Si-$CH_3$ made the pores, and increased the thickness. However, the SiOC film due to the lowering of the polarization decreased the thickness and then decreased the dielectric constant. After annealing process, the dielectric constant decreased because of the evaporation of the OH or $H_2O$ sites. The thickness was related to the lowering of the dielectric constant by the reduction of the polarization and the thickness decreased with the decrease of the dielectric constant. The refractive index was in inverse proportion to thickness. The trends of the thickness and refractive index did not change after annealing.

• Journal of information and communication convergence engineering
• /
• v.9 no.2
• /
• pp.217-219
• /
• 2011

As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

• Electrical & Electronic Materials
• /
• v.7 no.2
• /
• pp.145-151
• /
• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.6
• /
• pp.429-433
• /
• 2013

PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

• Composites Research
• /
• v.27 no.1
• /
• pp.25-30
• /
• 2014

The actuation performance of an EADE (Electro-active dielectric elastomer) is studied as functions of thinner content, thickness and types of the dielectric elastomer such as natural (NR), acrylonitrile-butadiene (NBR), and silicon (KE-12) rubbers. With a decrease in elastomer thickness ($1{\rightarrow}0.5{\rightarrow}0.25{\rightarrow}0.1{\rightarrow}0.05$ mm) and an increase in thinner content ($0{\rightarrow}30{\rightarrow}50$ phr), the actuating displacement of KE-12 elastomer is increased, however their breakdown occurs at low voltage. For the same thickness (1 mm), the displacement of KE-12 elastomer shows a higher value (2.24 mm) compared to that of NR or NBR at the same applied voltage of 25 kV. The KE-12 has the lowest elastic modulus and the NBR has the highest one among the tested elastomers. However, the displacement of NBR elastomer is higher compared to that of NR because of high dielectric constant. It is found that the important factors of EADE actuator are a thickness, modulus and dielectric constant of the elastomer.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.4
• /
• pp.54-59
• /
• 2003

In this paper, a cylindrical dielectric antenna with dielectric clad is designed and analyzed. Design parameters of a cylindrical dielectric resonator antenna are calculated from the wave equation of cylindrical dielectric. The variations of characteristics of the antenna are analyzed as varying the thickness and the relative permittivity of its clad. From the results, when the ratio of the outside radius of the dielectric clad to the radius of the cylindrical dielectric is 1.3 and the relative permittivity of the dielectric clad is one-third of the cylindrical dielectric resonator antenna, the relative bandwidth of the antenna is 49%, which is improved by 2.3 times than the cylindrical dielectric resonator antennas. However, the thickness and the relative permittivity of the dielectric clad have not effect on the radiation pattern, beamwidth and gain of the antenna.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.3
• /
• pp.169-179
• /
• 2023

This work studies dielectric breakdown behavior of AAO (anodic aluminum oxide) films formed on pure aluminum at a constant current density in 5 ~ 20 vol.% sulfuric acid (SA) and 2 ~ 8 wt.% oxalic acid (OA) solutions. It was observed that dielectric breakdown voltage of AAO film with the same thickness increased with increasing concentration of both SA and OA solutions up to 15 vol.% and 6 wt.%, respectively, above which it decreased slightly. The dielectric breakdown resistance of the OA films appeared to be superior to that of SA films. After dielectric breakdown test, cracks and a hole were observed. The crack length increased with increasing SA film thickness but it did not increase with increasing OA film thickness. To explain the reason why shorter cracks formed on the OA films than the SA films after dielectric breakdown test, the generation of tensile stresses at the oxide/metal interface was discussed in relation to porosity of AAO films obtained from cross-sectional morphologies.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.4
• /
• pp.13-17
• /
• 2003

This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

• Journal of the Korean institute of surface engineering
• /
• v.33 no.4
• /
• pp.217-221
• /
• 2000

The gate oxide thickness is becoming thinner and thinner in order to speed up the semiconductor CMOS devices. We have investigated very thin$ SiO_2$ gate oxide layers and found anomaly between the thickness determined with capacitance measurement and these obtained with cross-sectional high resolution transmission electron microscopy. The thicknesses difference of the two becomes important for the thickness of the oxide below 5nm. We propose that the variation of dielectric constant in thin oxide films cause the anomaly. We modeled the behavior as (equation omitted) and determined $\varepsilon_{bulk}$=3.9 and $\varepsilon_{int}$=-4.0. We predict that optimum $SiO_2$ gate oxide thickness may be $20\AA$ due to negative contribution of the interface dielectric constant. These new results have very important implication for designing the CMOS devices.s.