• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.521-524
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• 2010

Low loss perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. In this study, we fabricated Ag(Ta,Nb)$O_3$ thick films on the $Al_2O_3$ substrates by the screen printing method. The Ag(Ta,Nb)$O_3$ powders were fabricated by the mixed oxide method. The sintering temperature and time were $1150^{\circ}C$ and 2 hrs, respectively. The results of XRD analysis showed that the specimens employed in this study had the pesudo cubic structure. The dielectric permittivity and loss tangent of the films have been characterized from 1 kHz to 1 MHz. Also the dielectric permittivity and loss tangent were measured from 303 K to 393 K. The electrical properties of the film are also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.307-308
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• 2006

In this paper, we propose an ultra wideband pass filter of ring type with embedded stripline stub. The fractional bandwidth was 98 % at the center frequency of 8 GHz and insertion loss was below 1 dB in passband. Two kinds of dielectric materials with the permittivity of 7.8 and 40, respectively were adopted in evaluating the suggested filter structure. As the permittivity of material became larger, the size of filter smaller as expected without any sacrifice in filter performance. In summary, the suggested filter structure has smaller size due to the embedded stripline stub and can be minimized by adopting dielectric material with higher permittivity again.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.771-775
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• 2010

In this study, piezoelectric and dielectric properties of the $(Na_{0.5}K_{0.5})NbO_3-(1-x)(Bi_{0.5}Na_{0.5})TiO_3-xBaTiO_3$ [NKN-(1-x)BNT-xBT] ceramics were investigated. The lead-free NKN-(1-x)BNT-xBT ceramics were fabricated by a conventional mixed oxide method. The results indicate that the addition of $BaTiO_3$ significantly influences the sintering, microstructure, phase transition and electrical properties of NKN-BNT ceramics. A gradual change in the piezoelectric and dielectric properties was observed with the increase of BT contents. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the morphotropic phase boundary (MPB). The $d_{33}$=184 pC/N, $k_p$=0.38, dielectric constant=1455 with dielectric loss value of less than 1% were obtained for the NKN-0.95BNT-0.05BT ceramics sintered at $1150^{\circ}C$ for 2h. These results demonstrate that the NKN-(1-x)BNT-xBT ceramics is an attractive candidate for lead-free piezoelectric materials.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.263-269
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• 2011

In this study, the compositions for the microwave dielectric materials were investigated to obtain the improved dielectric properties, the high temperature stability, and the sintering temperature of less than $900^{\circ}C$, which was necessary for cofiring with the internal conductor of silver. In addition, the dielectric sheets were prepared by the tape casting technique, after which the sheets were laminated and sintered. In this process, the optimum ratio of powder and binder, laminating pressure, temperature, and possibility for cofiring with the internal conductor were studied. Finally, multilayer chip treplexer filter for the 800-2,000 MHz range were fabricated, and the frequency characteristics of the triplexer filter were investigated. When the $0.6TiTe_3O_8-0.4MgTiO_3+3wt%SnO+7wt%H_3BO_3$ ceramics were sintered at $820^{\circ}C$ for 0.3 hours, the microwave dielectric properties of the dielectric constant of 29.91, quality factor of 33,000 GHz, and temperature coefficient of resonant frequency of -2.76 ppm/$^{\circ}C$ were obtained. Using the Advanced Design System (ADS) and High Frequency Structure Simulator (HFSS), the multilayer chip triplexer filter acting at the range of 800-2,000 MHz were simulated and manufactured. The manufactured triplexer filter had the excellent frequency properties in the CDAM800, GPS and PCS frequency regions, respectively.

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.698-702
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• 2005

Dielectric and Piezoelectric properties of complex perovskite 0.92Pb($Zr_{1/2}Ti_{1/2})O_{3}-(0.08-x)Pb(Cu_{1/3}Nb_{2/3})O_{3}-xPb(Mn_{1/3}Nb_{2/3})O_{3}(0{\leq}x{\leq}0.080$) (PZT-PCN-PMN) system were investigated as a function of PMN content. With the increase of PMN content of the sintered specimens, tetragonal phase was coexisted with rhombohedral phase, the dielectric constant was decreased, mechanical quality factor ($Q_{m}$) was inceased, and optimal sintering temperature was increased up to 1050$^{\circ}C$. For the composition of x = 0.064 sintered at 1050$^{\circ}C$ for 2 h, 1939 of maximum mechanical quality factor ($Q_{m}$), 57$\%$ of electromechanical coupling factor ($k_{p}$), and 1100$^{\circ}C$ of dielectric constant, 0.37$\% $ of dielectric loss (tan $\delta$) were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.326-326
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• 2010

The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.44-47
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• 2001

Effects of $Er_2O_3$ addition on the dielectric properties of non-reducible $BaTi_3$-based X7R dielectrics with Ni electrode have been studied in reducing atmosphere. X7R with moderate temperature-dependence was developed after addition of $Er_2O_3$ with $MnO_2-MgO$; room-temperature dielectric constant and dissipation factor were >2900 and < 1.0%, respectively. The addition of $Er_2O_3$ greater than 3.0 mol% improved the temperature dependence of dielectric properties, but a significant decrease of the dielectric constant at room-temperature was observed. The TCC curves rebated clockwise with increasing MnO$_2$ content at a given additive system, 1.5 mol% $Er_2O_3$ and 2.0 mol% MgO.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.471-477
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• 2007

This paper presents the characteristics of electromagnetic field uniformity in a reverberation chamber with flat diffusers composed of multiple dielectric materials that can be used as an alternative facility for the analysis, test and evaluation of electromagnetic interference and immunity. The field characteristics and the size of the test volume inside the reverberation chamber with the new diffuser of multiple dielectric materials are simulated and analyzed at $2.5{\sim}3$ GHz band. The FDTD method is used to analyze the field characteristics. The field uniformity, polarization characteristics and tolerance are improved by the new diffuser with smaller physical size. The reverberation chamber with flat diffusers composed of multiple dielectric materials shows better electromagnetic performance and larger test volume than normal chamber.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.287-290
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• 1998

It was investigated that the dielectric properties of ferroelectric materials using PZT-5A and PZT thin films. PZT-5A was 20mm diameters, 0.71mm, 0.51mm and 0.41mm thickness respectively and having c-axis preferred orientation. Electrodes(Al) were deposited by evaporation method. PZT thin film was deposited on Pt/SiO$_2$/Si substrate by RF magnetron sputtering method, and annealed at 750$^{\circ}C$ with RTA. Dielectric constants were measured automatically by computer measuring system. Dielectric constants were changed rapidly from 817 to 888 in 0.41mm thickness PZT-5A, 823 to 890 in 0.51mm and 822 to 839 in 0.71mm as the electric field grown. In the case of PZT thin film, dielectric constants were changed from 724 to 1173 in 4500${\AA}$ thickness, 721 to 1204 in 5500${\AA}$ thickness and 811 to 1407 in 7000${\AA}$ thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.271-271
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• 2010

$BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.