• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).

• Macromolecular Research
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• v.11 no.4
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• pp.256-259
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• 2003

Measurements of Young's modulus, dielectric loss and a.c. conductivity have been carried out on EPDM rubber samples loaded with different concentrations of $CrCl_3$ (0,2,4 and 6 phr). The values of Young's modulus was found to be linearly dependent on the $CrCl_3$ content. Variation of the dielectric loss with temperature showed that $CrCl_3$ may act as plasticizer. However, at higher frequencies the dielectric loss was found to be independent of frequency and the rubber samples may behave as non-polar dielectric. Investigations of the a.c conductivity suggested that the conduction in these rubber samples can be described by small polaron tunneling. In addition, conductivity was found to increase with $CrCl_3$ content.

• Journal of the Korea Institute of Military Science and Technology
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• v.10 no.3
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• pp.114-119
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• 2007

Dielectric properties of quartz glass and $Si_3N_4$ are investigated using the waveguide method from room temperature to $800^{\circ}C$. For the case of dielectric constant, $Si_3N_4$ showed similar increase with quartz glass up to $300^{\circ}C$, but less increase from $300^{\circ}C$ to $800^{\circ}C$. For the case of loss tangent, those showed gradual increase with temperature except of some temperature points. The loss tangent of $Si_3N_4$ and quartz glass increased up to 18.2% and 12.5% respectively. Through these researches, high temperature dielectric properties of silicon nitride materials are characterized.

• Bulletin of the Korean Chemical Society
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• v.20 no.11
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• pp.1329-1334
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• 1999

The curing characteristics of diglycidyl ether of bisphenol A (DGEBA) with diaminodiphenylmethane (DDM) as a curing agent were studied using differential scanning calorimetry (DSC), rheometrics mechanical spectrometry (RMS), and dielectric analysis (DEA). The isothermal curing kinetics measured by DSC were well represented with the generalized auto-catalytic reaction model. With the temperature sweep, the inverse relationship between complex viscosity measured by RMS and ionic conductivity obtained from DEA was established indicating that the mobility of free ions represented by the ionic conductivity in DEA measurement and the chain segment motion as revealed by the complex viscosity measured from RMS are equivalent. From isothermal curing measurements at several different temperatures, the ionic conductivity contribution was shown to be dominant in the dielectric loss factor at the early stage of cure. The contribution of the dipole relaxation in dielectric loss factor became larger as the curing further proceeded. The critical degrees of cure, at which the dipolar contribution in the dielectric loss factor starts to appear, increases as isothermal curing temperature is increased. The dielectric relaxation time at the same degree of cure was shorter for a sample cured at higher curing temperature.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.10-15
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• 1990

Theory and experimental results of measuring the microwave dielectric characteristics of low-loss materials by using dielectric rod resonator method are presented. The $TE_{011}$ mode resonance frequency was adapted to minimize the effect of the air gap between the rod and the conducting plates. The dielectric properties were computed from the resonance frequency, sample geometry and 3 dB bandwidth. The error of measurements was within ${\pm}3{\%}$ for dielectric constant and was within ${\pm}12{\%}$ for dielectric loss.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.456-461
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• 2015

In this study, the frequency properties of electrostatic capacity and dielectric loss for the samples with different types of filler has been measured in through the applied frequency range of 7 kHz ~3,000 kHz at temperature of $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$. The results of this study are as follows. When the sample is degradated at the temperature of $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$ and the frequency range of 7 kHz ~3,000 kHz is applied, It found that the electrostatic capacity of the sample with Polyimide film is larger than the sample with Grass fiber. It found that the dielectric loss for the sample with Polyimide film is larger than the sample with Grass fiber with increasing frequency and temperature in the $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$ range. Also, the dielectric loss decreased with increasing frequency. In case of the sample with Polyimide film, It found that the electrostatic capacity decreased with increasing temperature, and the dielectric loss gradually decreased with increasing frequency.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.49-52
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• 2009

Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around $660^{\circ}C$. The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at $1450^{\circ}C$ were about $1.6{\mu}m$ and $45{\mu}m$, respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at $1450^{\circ}C$ the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.847-851
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• 2014

The characteristics of dielectric constant and $tan{\delta}$ of low viscosity silicone oils with changing degree of polymerization were investigated. The result shows dipole loss mechanism at low temperature range. The dielectric loss in the range of low frequencies are predominantly of ionic nature with temperature increase. The peak of dielectric loss is the detrapping of the electrons which is were trapped in the localized level of the silicone oils at the frequency of 30 kHz. The increase of ionic conduction is attributed to the presence of ionizable oxidation products and their increased dissociation feature. The activation energy ${\Delta}H$ and dipole moment ${\mu}_d$ were increased whit increasing degree of polymerization.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.265-268
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• 2009

The discharge condition of Plasma display panel(PDP) changes as the display time increases. Imaginary part of permittivity of dielectric material which is related to dielectric loss has been often neglected because of relatively small value compare to that of the real part. The thermal characteristics of PDPs with two different dielectrics has been studied and compared.