• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.366.2-366.2
• /
• 2014

Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.

• ETRI Journal
• /
• v.31 no.6
• /
• pp.660-666
• /
• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.214.2-214.2
• /
• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.5
• /
• pp.235-240
• /
• 2014

Nanocomposites made of linear low density polyethylene (LLDPE) and organo-modified montmorillonite (O-MMT) were processed by melt compounding from a commercially available premixed LLDPE/nanoclay masterbatch, at different nanoclay loadings, by co-rotating twin-screw extruder. The morphological and dielectric properties of LLDPE/O-MMT nanocomposites were investigated to understand the structure-dielectric properties relationship in the nanocomposites. The microstructures of the materials were characterized by wide angle X-ray diffraction (WAXD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM). Initial findings by FTIR spectroscopy characterization indicated the absence of any chemical interaction between LLDPE and nanoclay during the extrusion process, while DSC showed that a 1% wt loading of nanoclay particles increased the degree of crystallinity of the nanocomposites samples. On the other hand, XRD, SEM, TEM and AFM indicated that nanoclay layers were intercalated or exfoliated in the LLDPE matrix. A correlation between the structure and dielectric properties of LLDPE/O-MMT nanocomposites was found and discussed.

• Korean Journal of Optics and Photonics
• /
• v.26 no.3
• /
• pp.139-146
• /
• 2015

The effects of a dielectric multilayer mirror on the efficiency of organic light-emitting diodes (OLEDs) were investigated by using optical simulation. Adoption of a dielectric mirror consisting of alternating SiN and $SiO_2$ layers narrowed the emission spectrum due to the microcavity effect, and increased the outcoupling efficiency by a few percent. The layer thicknesses of the dielectric mirror were adjusted to change the wavelength of the resonance mode, which may be used to increase the color purity.

• Journal of the Korean Ceramic Society
• /
• v.39 no.3
• /
• pp.222-225
• /
• 2002

Microwave dielectric properties of the layered and functionally graded materials (FGMs) of $Mg_{0.93}Ca_{0.07}TiO_3$ (MCT) and $(Ca_{0.3}Li_{0.14}Sm_{0.42})TiO_3$(CLST) were investigated as a function of the volume ratio of two components. Dielectric constant was decreased with an increase of the volume ratio of MCT which had a lower dielectric constant thant CLST. For the layered FGMs specimens, the difference of thermal expansion coefficients between two components induced thermal strain to dielectric layers, which was confirmed by the plot of ${\Delta}$k (X-ray diffraction peak width0 versus k (scattering vector) using the double-peak Lorentzian function, f(x). Quality factor of the specimens was affected by the thermal strain of dielectric layer, especially MCT layer. For the specimen with the volume ratio of MCT/CLST = 2, the qulaity factor of the specimen showed a minimum value due to the maximum thermal strain fo MCT layer.

• Applied Microscopy
• /
• v.47 no.1
• /
• pp.36-42
• /
• 2017

Field electron emission measurements were performed on dielectric-coated tungsten emitters, with apex radii in the nanometer and micrometer range, which were prepared by electrochemical etching in NaOH solution. Measurements were performed in a field electron microscopy (FEM) with a base pressure <$10^{-6}$ Pascal ($10^{-8}$ mbar). Four different types of dielectric were used, namely: (1) Clark Electromedical Instruments epoxylite resin, (2) Epidian 6 produced by Ciech Sarzyna S. A., (3) a Radionox solution of colloidal graphite; and (4) Molyslip 2001 E compound ($MoS_2$ and MoS). Current-voltage measurements and FEM images were used to investigate the characteristics of these composite emitters, and to assess how the different types of dielectric coating affect the suitability of the composite emitter as a potential electron source.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.10
• /
• pp.759-762
• /
• 2010

In this investigation, the effects of $N_2/(Ar+N_2)$ gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under $N_2/(Ar+N_2)$ gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.32 nm and very dense structure. We suggest the possibilities of it's application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.88-91
• /
• 2003

Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.20 no.1
• /
• pp.83-88
• /
• 2020

In this paper, H-polarized electromagnetic scattering problems by a conductive strip grating between a grounded double dielectric layer are analyzed by applying the FGMM(Fourier-Galerkin Moment Method) known as a numerical method of electromagnetic fileld. The boundary conditions are applied to obtain the unknown field coefficients, and the conductive boundary condition is applied to analysis of the conductive strip. The numerical results for normalized reflected power are analyzed by according as the width and spacing of conductive strip, the relative permittivity and thickness of the grounded double dielectric layers, and incident angles. Generally, as the value of the dielectric constant and dielectric thickness of a grounded double dielectric layer increases, the reflected power increased. And as dielectric thickness of a grounded double dielectric layer increases, the current density induced in the strip center increases. The numerical results for the presented structure of this paper are shown in good agreement compared to those of the existing papers using the PMM(Point Matching Method).