Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of AlN Dielectric Layer for Metal PCB as a Function of Nitrogen Partial Pressure Using RF-Magnetron Sputtering Method

RF-Magnetron Sputtering 방법을 이용해 질소분압비에 따른 금속 PCB용 AlN 절연막의 특성

  • Kim, Hwa-Min (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Park, Jeong-Sik (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Kim, Dong-Young (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Bae, Kang (Department of Electronics Engineering, Catholic University of Daegu) ;
  • Sohn, Sun-Young (Department of Electronics Engineering, Catholic University of Daegu)
  • 김화민 (대구가톨릭대학교 전자공학과) ;
  • 박정식 (대구가톨릭대학교 전자공학과) ;
  • 김동영 (대구가톨릭대학교 전자공학과) ;
  • 배강 (대구가톨릭대학교 전자공학과) ;
  • 손선영 (대구가톨릭대학교 전자공학과)
  • Received : 2010.08.02
  • Accepted : 2010.09.20
  • Published : 2010.10.01
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Abstract

In this investigation, the effects of $N_2/(Ar+N_2)$ gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under $N_2/(Ar+N_2)$ gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.32 nm and very dense structure. We suggest the possibilities of it's application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.

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References

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