• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.189-199
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• 2009

The Powder characteristics and sintering behavior of $SiO_2$ coated $BaTiO_3$ were studied. $BaTiO_3$ powders were synthesized by the liquid mix method developed by Pechini, and silica coating was prepared by alkoxide hydrolysis method with TEOS and ethanol. The particle size of the $BaTiO_3$ powders was 35 nm and the thickness of the $SiO_2$ coating layer was 5 nm. As the $SiO_2$ content increased, the $SiO_2$ layers improved the powder dispersion by increasing electrostatic repulsion between the $BaTiO_3$ particles. Effects of MgO coating on microstructure and dielectric properties of $BaTiO_3$ have been studied compared with mechanically MgO mixed $BaTiO_3$. MgO coated $BaTiO_3$ particles were prepared by a homogeneous precipitation method using $MgCl_2\cdot 6H_2O$ and urea. MgO coated $BaTiO_3$ exhibited homogeneous microstructure compared with mixed samples. XRD analysis revealed that Mg substitution for the Ti site in the MgO mixed sample was much greater than in the coated one. Electrical properties of MgO mixed and coated $BaTiO_3$ were affected by the diffusion behavior of Mg in $BaTiO_3$ lattice.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Applied Chemistry for Engineering
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• v.23 no.6
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• pp.515-520
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• 2012

In this review, the fabrication of silicon based memory capacitor and organic memory thin film transistors (TFTs) was discussed for their potential identification tag applications and biosensor applications. Metal or non-metal nanoparticles (NPs) could be capped with chemicals or biomolecules such as protein and oligo-DNA, and also be self-assembly monolayered on corresponding target biomolecules conjugated dielectric layers. The monolayered NPs were formed to be charging elements of a nano floating gate layer as forming organic memody deivces. In particular, the strong and selective binding events of the NPs through biomolecular interactions exhibited effective electrostatic phenomena in memory capacitors and TFTs formats. In addition, memory devices fabricated as organic thin film transistors (OTFTs) have been intensively introduced to facilitate organic electronics era on flexible substrates. The memory OTFTs could be applicable eventually to the development of new conceptual devices.

• Korean Journal of Remote Sensing
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• v.26 no.1
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• pp.21-27
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• 2010

This paper presents a numerical simulation of the radar backscattering from oil spills on ocean surface. At first, a one-dimensionally rough sea surface is numerically generated for a given wind speed at HEBEI SPIRIT accident. Then, an oil-spilled sea surface is represented with a two-layered medium, which is generated by adding a thin low-dielectric oil layer on the randomly-rough highdielectric sea surface. The backscattering coefficients of various oil-spilled sea surfaces are obtained using the Method of Moments and Monte Carlo technique for various surface roughness, oil-layer thicknesses, frequencies, polarizations and incidence angles. The numerical method is verified with theoretical models for simple structures. The reduction of the backscattering coefficients due to the lowdielectric oil-layers on sea surfaces has been analyzed. These numerical results will help to detect any oil spills on sea surfaces, and consequently, to classify SAR images.

• Korean Journal of Optics and Photonics
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• v.26 no.2
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• pp.103-109
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• 2015

In an amplitude-splitting interferometer, a beam splitter divides an input beam into two parts, which are superposed after propagating along separate paths, producing an interference effect. We have investigated the phase relation between the reflected and transmitted light waves at BS's made of lossless dielectric stacks. If we define the phases with proper reference planes, a definite phase relation exists, irrespective of the detailed structure of the layers in the BS. Although this results from the generalized Stokes relations, we have verified it numerically for two representative BS's with symmetric and asymmetric layer structures respectively. When we applied the phase relation to interferometers, we could determine the superposition state of the output beam (either constructive or destructive interference) for a general BS, and could verify that the light's energy was conserved.

• Journal of the Korea Convergence Society
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• v.12 no.2
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• pp.29-34
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• 2021

In this paper, a cylindrical photonic crystal waveguide with a low-index core is first proposed. The core can be filled with air, liquid, or arbitrary dielectric materials. Exact analyses for the electromagnetic field characteristics of guided modes, by using appropriate Bessel functions and applying the boundary conditions, are performed to find out the guiding characteristics of the proposed waveguide. For verification and usage in design and manufacturing process, the computer-calculation of the waveguide transmission characteristics is also performed by applying the rigorous full-vectorial finite difference method. Providing variations of the effective area for the fundamental mode of the designed waveguide with different numbers of cladding layers, ranging from 2.6056 ㎛2 to 5.9673 ㎛2 over the operation wavelength, generally as the core refractive index n1 is higher, the mode area becomes smaller and the result leads to more optimistic effect for nonlinear device applications.

• Journal of the Korean Society of Radiology
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• v.17 no.4
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• pp.625-631
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• 2023

The important requirement of industrial dynamic X-ray detector operating under high tube voltage up to 450 kVp for 24 hours and 7 days is to obtain significantly high radiation resistance. This study presents the radiation resistance characteristics of various thin film transistors (TFTs) with a-Si, poly-Si and IGZO semiconducting layers. IGZO TFT offering dozens of times higher field effect mobility than a-Si TFT was processed with highly hydrogenated plasma in between IGZO semiconducting layer and inter-layered dielectric. The hydrogenated IGZO TFT showed most sustainable radiation resistance up to 10,000Gy accumulated, thus, concluded that it is a sole switching device in X-ray imaging sensor offering dynamic X-ray imaging at high frame rate under extremely severe radiation environment such as automated X-ray inspection.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.