• 제목/요약/키워드: Dielectric layers

검색결과 442건 처리시간 0.031초

FBAR용 ZnO 박막의 열처리 온도변화에 따른 미세조직 및 전기적 특성 (Microstructure and Electrical Properties of ZnO Thin Film for FBAR with Annealing Temperature)

  • 김봉석;강영훈;조유혁;김응권;이종주;김용성
    • 한국세라믹학회지
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    • 제43권1호
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    • pp.42-47
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    • 2006
  • In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{\circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition.

Neural Network Modeling of PECVD SiN Films and Its Optimization Using Genetic Algorithms

  • Han, Seung-Soo
    • International Journal of Fuzzy Logic and Intelligent Systems
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    • 제1권1호
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    • pp.87-94
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    • 2001
  • Silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are useful for a variety of applications, including anti-reflecting coatings in solar cells, passivation layers, dielectric layers in metal/insulator structures, and diffusion masks. PECVD systems are controlled by many operating variables, including RF power, pressure, gas flow rate, reactant composition, and substrate temperature. The wide variety of processing conditions, as well as the complex nature of particle dynamics within a plasma, makes tailoring SiN film properties very challenging, since it is difficult to determine the exact relationship between desired film properties and controllable deposition conditions. In this study, SiN PECVD modeling using optimized neural networks has been investigated. The deposition of SiN was characterized via a central composite experimental design, and data from this experiment was used to train and optimize feed-forward neural networks using the back-propagation algorithm. From these neural process models, the effect of deposition conditions on film properties has been studied. A recipe synthesis (optimization) procedure was then performed using the optimized neural network models to generate the necessary deposition conditions to obtain several novel film qualities including high charge density and long lifetime. This optimization procedure utilized genetic algorithms, hybrid combinations of genetic algorithm and Powells algorithm, and hybrid combinations of genetic algorithm and simplex algorithm. Recipes predicted by these techniques were verified by experiment, and the performance of each optimization method are compared. It was found that the hybrid combinations of genetic algorithm and simplex algorithm generated recipes produced films of superior quality.

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기계적 특성이 우수한 원통형 복합재료 안테나의 설계 및 충격 실험 (Design and Impact Testing of Cylindrical Composite-Antenna-Structures having High Mechanical Performanc)

  • 김동섭;조상현;황운봉;이중희
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2005년도 추계학술발표대회 논문집
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    • pp.35-38
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    • 2005
  • The Objective of this work was to design Composite Antenna Structures (CAS) and investigate impact behavior of CAS which was various curvature. This term, CAS, indicates that structural surface becomes antenna. Constituent materials were selected considering electrical properties, dielectric constants and tangent loss as well as mechanical properties. For the antenna performance, microstrip antenna layers inserted into structural layers were designed for satellite communication at the resonant frequency of 12.5 GHz and final demonstration article was. After making five kinds of curved CAS, which radii of curvature are flat, 200, 150, 100, 50 mm. The antenna performance changed in accordance with variation of curvature. The Reflection coefficient was independent of curvature but the gain decreased with the radius of curvature. The impact test equipment was Dyna-8250 drop weight tester. The impact characteristic in accordance with curvature is maximum absorb energy is same each other. The impact energy was 8.5 J. For various Impact energy test, five energy levels 3 J, 5 J, 7 J, 10 J, 20 J were used. The performance of impact damaged antenna was estimated by measuring the return loss and the radiation pattern. It was revealed that the performance of antenna was not related to the impact damage. Because the impactor did not damage the patch directly. CAS have good impact stability for the antenna performance.

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Fabrication of interface-controlled Josephson junctions using Sr$_2$AlTaO$_6$ insulating layers

  • Kim, Jun-Ho;Choi, Chi-Hong;Sung, Gun-Yong
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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    • pp.165-168
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    • 2000
  • We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr$_2$AlTaO$_6$(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa$_2$Cu$_3$O$_{7-x}$ (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as T$_c$, I$_c$c, R$_n$ were measured and discussed in relation to the barrier layer depending on the process parameters.

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Preparation of Novel Magnesium Precursors and MgO Thin Films Growth by Atomic Layer Deposition (ALD)

  • Kim, Hyo-Suk;park, Bo Keun;Kim, Chang Gyoun;Son, Seung Uk;Chung, Taek-Mo
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.364.2-364.2
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    • 2014
  • Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

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A Study on the Electrical Physical Properties of Organic Thin Films for Manufacture in Power Device

  • Song, Jin-Won;Lee, Kyung-Sup
    • Transactions on Electrical and Electronic Materials
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    • 제6권1호
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    • pp.18-21
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    • 2005
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuirfilms. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed a and the molecular area Am. Compression speed a was about 30, 40, and 50 mm/min. Langmuir-Blodgett(LB) layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Aul Arachidic acid! AI, the number of accumulated layers are $9{\sim}21$. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to+3 V. The insulation property of a thin film is better as the distance between electrodes is larger.

Modified Principal Component Analysis for In-situ Endpoint Detection of Dielectric Layers Etching Using Plasma Impedance Monitoring and Self Plasma Optical Emission Spectroscopy

  • Jang, Hae-Gyu;Choi, Sang-Hyuk;Chae, Hee-Yeop
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.182-182
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    • 2012
  • Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

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전력 소자용 유기박막의 전기적 특성 (Electrical Properties of Organic Thin Film for Power Device)

  • 송진원;최용성;문종대;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.20-22
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    • 2006
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed and the molecular area Am. Compression speed was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9~21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

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SiO2/Si3N4 터널 절연악의 적층구조에 따른 비휘발성 메모리 소자의 특성 고찰 (Study of Nonvolatile Memory Device with SiO2/Si3N4 Stacked Tunneling Oxide)

  • 조원주
    • 한국전기전자재료학회논문지
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    • 제22권1호
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    • pp.17-21
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    • 2009
  • The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated for nonvolatile memory device applications. The band structure of band-gap engineered tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with the conventional tunneling $SiO_2$ barrier. The band-gap engineered tunneling barriers composed of thin $SiO_2$ and $Si_3N_4$ layers showed a lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

분리층의 상대 변위를 이용한 고분자 미끄럼 촉각 센서 개발 (Development of Polymer Slip Tactile Sensor Using Relative Displacement of Separation Layer)

  • 김성준;최재영;문형필;최혁렬;구자춘
    • 로봇학회논문지
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    • 제11권2호
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    • pp.100-107
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    • 2016
  • To realize a robot hand interacting like a human hand, there are many tactile sensors sensing normal force, shear force, torque, shape, roughness and temperature. This sensing signal is essential to manipulate object accurately with robot hand. In particular, slip sensors make manipulation more accurate and breakless to object. Up to now several slip sensors were developed and applied to robot hand. Many of them used complicate algorithm and signal processing with vibration data. In this paper, we developed novel principle slip sensor using separation layer. These two layers are moved from each other when slip occur. Developed sensor can sense slip signal by measuring this relative displacement between two layers. Also our principle makes slip signal decoupled from normal force and shear force without other sensors. The sensor was fabricated using the NBR(acrylo-nitrile butadiene rubber) and the Ecoflex as substrate and a paper as dielectric. To verify our sensor, slip experiment and normal force decoupling test were conducted.