• Korean Journal of Food Science and Technology
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• v.28 no.3
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• pp.470-474
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• 1996

The dielectric properties, dielectric constant (${\varepsilon}‘$) and loss factor (${\varepsilon}’$), of skin and pulp of fresh ginseng were measured from $25^{\circ}C$ to $67^{\circ}C$ using an open-ended coaxial probe technique for 915 MHz and 2450 MHz. Pulp and skin had dielectric constant of $30{\sim}64$ and loss factor between 10 and 20, each variable having a respective frequency dependence typical of materials with high water content. Although the loss factor was nearly constant, the dielectric constant increased as moisture content increased. The dielectric constant of ginseng pulp increased as temperature increased (temperature ${\leq}56^{\circ}C$), but any significant differences were not found in skin dielectric properties. Penetration depth for fresh ginseng were about 2 cm at 91.5 MHz and 1cm at 2450 MHz.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.12
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• pp.1582-1585
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• 1988

A cavity perturbation technique is employed to determine the dielectric property of thin samples. Substrates in microwave integrated circuits are fabricated in sheet form and are expected to have a dielectric constant less than 10 and a dielectric loss better than 10**-3. This research aimed to determine both dielectric constant and dielectric loss with good accuracy. The tecynique makes use of thin circular disk samples placed in a right circular cylindrical cavity. The accuracy of measurements is within \ulcorner% for dielectric constnat and 3x10**-4 for dielectric loss.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.429-433
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• 2013

PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.153-156
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• 2001

(Ba$_{0.6-x}$Sr$_{0.4}$Ca$_{x}$)TiO$_3$ (x=0.10, 0.15, 0.20) ceramics were fabricated by the mixed-oxide method and their dielectric properties were investigated with variation of composition ratio, doped ZrO$_2$ (0.5, 1.0, 1.5, 2.0, 3.0 wt%) and sintered at 145$0^{\circ}C$. The dielectric constant and loss of the x=0.10 specimen applied field were 19.86 and 0.302 % at 0 V/cm, and 25.937 and 0.339 % at 300 V/cm, respectively. Dielectric constant were increased with increased applied field and decreased with increased frequency, and dielectric loss were within 0.1% at applied 800 MHz, respectively. all specimens showed fairly good applied field. Although, dielectric constant and loss of all specimen showed to tend of nearly the same. same.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.187-190
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• 1998

In this paper a probe for the' measurement of dielectric properties of dielectric sheet materials is designed and implemented as a coaxial air line type. Using the broadband impedance method with this measurement probe the dielectric constant and loss tangent of the glass-epoxy and teflon are determined in the frequency range of 0.1 - l.O[GHz] with the temperature variation from $25[^{\circ}C]$ up to $65[^{\circ}C]$. A measured relative dielectric constant of the glass-epoxy is 4.42 and a loss tangents is 0.019 relatively, and the relative dielectric constants of teflon is 2.17 and a loss tangents is 0.002 relatively

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.338-341
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• 2015

Epoxy/micro-sized alumina composite was prepared, and the effects of alumina content on the dielectric properties were investigated in order to develop an insulation material for gas-insulated switchgears (GIS). Nano-sized alumina (average particle size: 30 nm) was also incorporated into the epoxy/micro-sized alumina composite. Dielectric tests were carried out in ASTM D 150, and capacitance (Cp) and dielectric loss (tanδ) were measured. The dielectric constant increased with increasing alumina content in the epoxy/micro-alumina system and the epoxy/micro-alumina/nano-alumina system. As 1,3-diglycidyl glyceryl ether (DGE) content increased, the dielectric constant decreased and dielectric loss increased. This ocurred as a result of the weak electric field enhancement due to homogeneous dispersion of micro- and nano-sized alumina particles in an epoxy composite.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.34 no.8
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• pp.323-330
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• 1985

Dielectric loss tangent and ac dielectric strength of GFRP (Glass Fiber Reinforced Plastics, G-10)was investigated as parameters of mechanical and thermal stresses, in order to study the basic dielectrical characteristics of composite insulating materials. The dielectric loss tangent was increased and the ac dielectric strength was decreased with increase in the mechanical stresses beyond the mechanical yield point on account of fiber-matrix debonding, but the dielectric constant was not varied sigificantly. the dielectric strength of G-10 was about 2 MV/cm and the dielectric constant was about 4.8.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.43-47
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• 2001

Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.566-569
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

• Journal of the Semiconductor & Display Technology
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• v.4 no.1 s.10
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• pp.55-59
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• 2005

The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).