• 한국진공학회지
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• 제7권3호
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• pp.267-267
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• 1998

ECR plasma CVD를 이용한 SiOF박막은 낮은 유전상수를 가지고 있으며, 기존의 공정과의 정합성이 우수해 다층배선 공정에 채용이 유망한 재료이지만 수분의 흡수로 인한 유전율의 상승과 후속공정의 안정성이 문제점으로 부각되고 있다. 따라서 본 연구에서는 SiOF박막의 내흡습성과 후속공정에서의 안정성을 향상시키기 위하여 SiOF박막을 증착한 후 후속 산소 플라즈마 처리를 행하였다. SiOF박막은 산소 플라즈마 처리를 수행함으로써 SiOF박막의 밀도가 증가하고, 수분과의 친화력이 강한 Si-F 결합이 감소하는 것이 주요한 원인으로 사료된다. 하지만 플라즈마 처리 시간이 5분 이상으로 증가하면 유전율의 증가가 일어난다. 따라서 본 실험에서는 산소 플라즈마 처리조건이 마이크로파 전력이 700W, 공정 압력이 3mTorr, 기판온도가 300℃일 경우 플라즈마 처리시간은 3분이 적당한 것으로 생각 된다.봉？향상시키기 위하여 SiOF박막을 증착한 후 후속 산소 플라즈마 처리를 행하였다. SiOF박막은 산소 플라즈마 처리를 수행함으로써 SiOF박막의 밀도가 증가하고, 수분과의 친화력이 강한 Si-F 결합이 감소하는 것이 주요한 원인으로 사료된다. 하지만 플라즈마 처리 시간이 5분 이상으로 증가하면 유전율의 증가가 일어난다. 따라서 본 실험에서는 산소 플라즈마 처리조건이 마이크로파 전력이 700W, 공정 압력이 3mTorr, 기판온도가 300℃일 경우 플라즈마 처리시간은 3분이 적당한 것으로 생각된다.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• 한국전기전자재료학회논문지
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• 제31권2호
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• pp.80-84
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• 2018

In this study, we investigated plasmon effects to maximize the sterilization of dielectric discharge. We predicted the effect using the finite difference time domain (FDTD) method as a function of electrode shape, size, and period. The structure of the electrode was designed with a thickness of 100 nm of silver nanoparticles on a glass substrate, and was varied according to the shape, size, and period of the electrode hole. Based on the results, it was confirmed that the effect of plasmons was independent of the shape of the electrode hole. It was thus confirmed that the plasmon effect depended only on the size and period of the holes. Further, the plasmon effect was affected by the size rather than period of the holes. Because the absorption of light by the metal varied according to the size of the hole, the plasmon effect generated by the absorption of light also varied. The best results were obtained when the radius and period of the electrode holes were $0.1{\mu}m$ and $0.4{\mu}m$, respectively.

• 한국분말재료학회지
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• 제15권1호
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• pp.53-57
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• 2008

The amorphous $Fe_{73}Si_{16}B_7Nb_3Cu_1$(at%) alloy strip was pulverized using a jet mill and an attrition mill to get flake-shaped powder. The flake powder was mixed with dielectric $BaTiO_3$ powder and its dispersant to increase the permittivity. The powders covered with dielectric powders and its dispersant were mixed with a binder and a solvent and then tape-cast to form sheets. The absorbing properties of the sheets were measured to investigate the roles of the dielectric powder and its dispersant. The results showed that the addition of $BaTiO_3$ powders and its dispersant improved the absorbing properties of the sheets noticeably. The powder sheet mixed with 5 wt% of $BaTiO_3$ powder and 1 wt% of dispersant showed the best electromagnetic wave absorption rate because of the increase of the permittivity and the electrical resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.80-84
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• 1993

In this research, we studied the variation of the dielectric loss absorption of the dielectric loss absorption of the sample according with the change to $\^$60/Co-${\gamma}$-ray irradiation dose of the influence of temperature and applied voltage. In order to investigate the effect of irradiation oriented polypropylene film, we have observed dissipation factor within the temperature range of 30∼130 [$^{\circ}C$] and voltage range of 100∼250$^{\circ}C$ [V]. As for the dependency of temperature by dissipation factor, the ${\alpha}$-peak which appears at high temperature increases accordingly to the increasement of irradiation dose which is contributed by the crystal region and moves towards the high temperature. The ${\beta}$-peak which appears at low temperature is origined from dipoles and molecular motions in the amorphous region. As for the dependency of voltage by tan$\delta$, at low temperature the peak of the tan$\delta$, at low temperature the peak of the tan$\delta$ shifts accordingly to the increasement of irradiation dose towards the high temperature region.

• 전기의세계
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• 제26권2호
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• pp.89-94
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• 1977

In order to investigate the properties of radiation resistance together with dielectric, and mechanical relaxation behaviors of polyvinylcholoride exposed to several different doses under the .gamma.-ray of Co$^{60}$ source, several observations were carried out on the exposed specimens propared by mixing dibutyl-tin-dilaulate and dibutyl-tin-dimaleate as stabilizer with or without adding dioctyl-phthalate as plasticizer. Conclusions obtained from the study are as follows: The origin of the absorption band at 1,540-1,640$cm^{-1}$ / on I.R. spectrum seems to be RCOO- ion originated from ionization of the stabilizer, and this peak can be useful as a measure of radiation resistance on polyvinylchloride. Addition of increasing plasticizer to polyvinylchloride exhibits increasing radiation resistance and the reason for this result may be attributed to aromatic resonance absorption of radiation energy by diotylphthalate. On dose dependent dielectric characteristics, nonplastized specimen shows a peak at about 10 Mrad and that this peak disappears on the plastification of specimens. Those phenomena may be explainable in considering the statistical distribution of scissored chain molecular segments as well as the plastification process of plasticizer to polyvinylchloride chain molecules.

• Journal of Radiation Protection and Research
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• 제42권1호
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• pp.21-25
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• 2017

Background: We are developing L-band and S-band microwave dielectric absorption systems aiming novel dosimetry using DNAs, such as plasmid DNA and genomic DNA, and microwave technology. Materials and Methods: Each system is composed of a cavity resonator, analog signal generator, circulator, power meter, and oscilloscope. Since the cavity resonator is sensitive to temperature change, we have made great efforts to prevent the fluctuation of temperature. We have developed software for controlling and measurement. Results and Discussion: By using this system, we can measure the resonance frequency, f, and ${\Delta}Q$ (Q is a dimensionless parameter that describes how under-damped an oscillator or resonator is, and characterizes a resonator's bandwidth relative to its center frequency) within about 3 minutes with high accuracy. Conclusion: This system will be expected to be applicable to DNAs evaluations and to novel dosimetric system.

• Journal of Korean Vacuum Science & Technology
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• 제2권1호
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• pp.25-31
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• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.490-491
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• 2007

We have investigated dielectric polarization in organic light-emitting diodes using 8-hydroxyquinoline aluminum$(Alq_3)$ as an electron transport and emissive material. We analyzed the dielectric polarization of organic light emitting diodes using impedance. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40Hz to $10^8Hz$. We obtained dielectric constant and loss tangent (tan ${\delta}$) of the device. From these analyses, we are able to interpret a dielectric dispersion and dielectric absorption contributed by an interfacial and orientational polarization.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.315-318
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• 2001

The optical and dielectric properties of TiO$_2$ thin films prepared with mixtures of Epoxy, bits-(4, 4'-p-toluenesulfonylacidic isoproplylidene)-cyclohexadiol and UVI 6990 in dry sol-gel process were investigated. The absorption peak of the films was showed at 360nm. Photocurrent of the thin films doped with 50 wt% of TiO$_2$was higher than that of nondoped thin films. Energy gap was lowered from 3.6 to 3.3 eV with increasing amount of TiO$_2$. Relative dielectric constants of samples were 1.5 to 3 and showed a characteristics of lower dielectric materials.