Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dielectric Characteristics through 2D-correlation Analysis of SiOCH Thin Film deposited by BTMSM/O2 High Flow Rates

BTMSM/O2 고유량으로 증착된 SiOCH 박막의 2차원 상관관계 분석을 통한 유전특성 연구

  • 김민석 (청주대학교 전자공학과) ;
  • 황창수 (공군사관학교 물리학과) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • Published : 2008.06.01
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Abstract

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

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References

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