• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• Bulletin of the Korean Chemical Society
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• v.16 no.9
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• pp.813-818
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• 1995

A diamond-like carbon (DLC) film was produced on a TiO2 substrate using a plasma enhance chemical vapor deposition (PECVD) method. The CH4-H2 plasma was produced by applying 400 V DC. The DLC film with the best crystalline structure was obtained when the concentration of CH4 in H2 was 0.75 percent by volume and total pressure was 40 torr. The presence of the diamond structure was confirmed by Raman spectroscopy, X-ray diffraction, and scanning electron microscopy methods. It was found that the diluting gas H2 played an important role in producing a DLC film using a PECVD method.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.11-22
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• 1990

Chemical vapor deposition of diamond under metastable conditions(low pressure and temperature) developed in the eighties is now an emerging technology for diamond coatings. In this article, various CVD methods are described with their advantages and limitations. The reaction mechanisms and the possible role of H atoms involved in the diamond film growth process are briefly reviewed. Also mentioned are the future research area and the prospect of applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.366-369
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• 1999

Synthetic diamond films have been deposited on the silicon(100) surface and molybdenum substrates using an microwave plasma enhanced vapor deposition (MWPECVD) method. The effect of deposition time, surface morphology, X-ray diffraction pattrm, infrared transmittance and Raman Scattering have been studied, The diamond film deposited on Mo substrate for (100) hours at 40 torr H$_2$-CH$_4$O$_2$ gas system have been shown 1${\mu}{\textrm}{m}$/h of growth rate and good crystallization

• Journal of Surface Science and Engineering
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• v.35 no.2
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• pp.122-128
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• 2002

This study was conducted to synthesize the diamond like carbon films by plasma enhanced chemical vapor deposition (PECVD). The effects of gas composition on growth and mechanical properties of the films were investigated. A little amount of hydrogen or oxygen were added to base gas mixture of methane and argon. Methane dissociation and diamond like carbon nucleation were enhanced by installing negatively bias grid near substrate. The deposited films were indentified as hard diamond like carbon films by micro-Raman spectroscopy. The surface and fractured cross section of the films which were observed by scanning electron microscopy showed that film growth is very slow as about 0.3$\mu\textrm{m}$/hour, and relatively uniform with hydrogen addition. Vickers hardness of tungsten carbide (WC) cutting tool increased from about 1000 to 1600~1800 by deposition of DLC film, that of commercial TiN coated tool was about 1270. In cutting test of aluminum 6061 alloy, DLC coated cutting tool showed 1/3 or lower crater and flank wear than TiN coated or non-coated WC cutting tools.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.200-203
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• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

• Tribology and Lubricants
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• v.20 no.1
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• pp.1-6
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• 2004

In order to identify the effect of lubricant films on abrasive abilities of diamond films, wear rates of Ruby balls slid over as grown diamond films and polytetrafluoroethylene films coated diamond films were compared by using pin-on-disk tribometer. Wear scars of Ruby balls were measured by SEM. Results showed that wear rates of Ruby balls slid over polytetrafluoroethylene coated diamond films were about 4 times lager than as grown diamond films. Coefficients of friction decreased with sliding distance at diamond disks but were almost unchanged at polytetrafluoroethylene coated ones. These results came from behaviors of wear debris, which adhered more strongly in the tracks of as grown diamond films than polytetrafluoroethylene coated ones.

• Journal of Surface Science and Engineering
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• v.47 no.2
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• pp.75-80
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• 2014

Nanocrystalline diamond(NCD) films on steel(SKH51) has been investigated using SiC interlayer film. SiC was deposited on SKH51 or Si wafer by RF magnetron sputter. NCD was deposited on SiC at $600^{\circ}C$ for 0.5~4 h employing microwave plasma CVD. Film morphology was observed by FESEM and FIB. Film adherence was examined by Rockwell C adhesion test. The growth rate of NCD on SiC/Si substrate was much higher than that on SiC/SKH51. During particle coalescence, NCD growth rate was slow since overall rate was determined by the diffusion of carbon on SiC surface. After completion of particle coalescence, NCD growth became faster with the reaction of carbon on NCD film controlling the whole process. In the case of SiC/SKH51 substrate, a complete NCD film was not formed even after 4 h of deposition. The adhesion test of NCD/SiC/SKH51 samples revealed a delamination of film whereas that of SiC/SKH51 showed a good adhesion. Many voids of less than 0.1 ${\mu}m$ were detected on NCD/SiC interface. These voids were believed as the reason for the poor adhesion between NCD and SiC films. The origin of voids was due to the insufficient coalescence of diamond particles on SiC surface in the early stage of deposition.

• Journal of Surface Science and Engineering
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• v.44 no.5
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• pp.190-195
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• 2011

Diamond-like carbon (DLC) has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion on the metal substrates because of weak bonding between DLC film and the metal substrate. The purpose of this study is to enhance an adhesion of DLC film. For improving adhesion, the substrate was treated by active screen plasma nitriding before DLC film deposing. Nitrided substrates were investigated by Glow Discharge Spectrometer (GDS), Micro-Vickers Hardness. DLC films were deposited on several metals by linear ion source, and characteristics of the films were investigated using nano-indentation, Field Emission Scanning Electron Microscope (FESEM). The adhesion was measured by scratch tester. The adhesion of DLC films was increased when nitriding layer was formed before DLC deposition. Therefore, the adhesion of DLC film can be enhanced as increasing the hardness of materials.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.732-742
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• 1995

Effects of the substrate pretreatment on uncleation density of the diamond thin films have been investigated. The film was prepared using the hot-filament CVD reactor with the mixture of methane and hydrogen. The substrate pretreatment was done in three different ways: predeposition of carbon on the substrate, soot on the substrate, and graphite on the substrate. All three cases enhanced the nucleation density of diamond. And the effect was more marked in the first and the second cases than in the third one. In the first case where the substrate was predeposited by the carbon phase, a very smooth and uniform film of diamond could be obtained. Since the bound strength between the substrate and the predeposited carbon phase is relatively weak, separation of the diamond film layer from the substrate was found to be easy.