• Title/Summary/Keyword: Device to Device (D2D)

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Investigating Paid Virtual Live Stream Concert Experience from the Perspective of Social Representations Theory (유료 온라인 라이브콘서트 소비경험에 대한 연구: 사회표상이론을 중심으로)

  • Hyunjin Park;Yoonhyuk Jung
    • Information Systems Review
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    • v.25 no.2
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    • pp.77-101
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    • 2023
  • Due to COVID-19, paid virtual live-stream concerts have emerged as an alternative format and a new revenue model for in-person live concerts. Despite the increasing scholarly and practical interest in how participants experience paid virtual live-stream concerts, few studies examined participants' consumption and participation experiences. Thus, this study aims to provide insights into consumers' virtual live-stream concert experience by employing social representations theory (SRT). We explore the features of paid virtual live-stream concerts based on the C-P-N-D (Content-Platform-Network-Device) framework and the consumers' cognitive and affective perception. To this end, an SRT-based core-periphery analysis was conducted based on 239 responses to the open-ended survey questions. The results show that network-and device-level features of virtual live concerts and participants' overall perception are presented as core elements of paid virtual live-stream concerts, whereas content- and platform-level features are peripheral elements. This finding provides an in-depth understanding of the emergence of paid virtual live-stream concerts as an alternative concert format, thereby providing an invaluable understanding of a virtual live concert experience and theoretical and practical insights.

A study on machining method about molybdenum alloy micro fixing part for TEM precision specimen. (TEM 정밀 시편 제작용 몰리브덴 합금 미세 고정 부품의 제작을 위한 절삭 가공 방법에 관한 연구)

  • Kim, Ki-Beom;Lee, Chang-Woo;Lee, Hae-Jin;Ham, Min-Ji;Kim, Gun-Hee
    • Design & Manufacturing
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    • v.11 no.3
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    • pp.19-24
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    • 2017
  • In these days, increase requirement of TEM (Transmission Electro Microscope) in not only scientific field but also industrial field. Because TEM can measure inner-structure of specimen a variety of materials like metal, bio. etc. When use TEM, specimen should be thin about 50nm. So making for thin specimen, use Ion milling device that include specimen holder. The holder generally made of Aluminium Aluminium holder is worn away easily. For this reason, using time of ion milling with aluminum holder is too short. To solve the problem, we replace aluminium holer to molybdenum alloy holder. In this paper, we design molybdenum alloy holer for CAM and modify CAD modeling for effective machining process. So we array a specimen 3 by 4 and setup orientation for one-shot machining process. Next we make a CAM program for machining. we making a decision two machining strategy that chose condition of tool-path method, step-down, step-over. etc. And then conduct machining using CNC milling machining center. To make clear difference between case.1 and case.2, we fixed machining conditions like feed-rate, main spindle rpm, etc. After machining, we confirm the condition of workpiece and analysis the problems case by case. Finally, case.2 work piece that superior than case.1 cutting with WEDM because that method can not ant mechanical effect on workpiece.

A Study on the Memory Trap Analysis and Programming Characteristics of Reoxidized Nitrided Oxide (재산화 질화산화막의 기억트랩 분석과 프로그래밍 특성)

  • 남동우;안호명;한태현;서광열;이상은
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.17-20
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    • 2001
  • Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

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A New Two-Dimensional Model for the Drain-Induced Barrier Lowering of Fully Depleted Short-Channel SOI-MESFET's

  • Jit, S.;Pandey, Prashant;Pal, B.B.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.4
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    • pp.217-222
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    • 2003
  • A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

The maintenance record of the KSTAR helium refrigeration system

  • Moon, K.M.;Joo, J.J.;Kim, N.W.;Chang, Y.B.;Park, D.S.;Kwag, S.W.;Song, N.H.;Lee, H.J.;Lee, Y.J.;Park, Y.M.;Yang, H.L.;Oh, Y.K.
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.4
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    • pp.6-9
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    • 2013
  • Korea Superconducting Tokamak Advanced Research (KSTAR) has a helium refrigeration system (HRS) with the cooling capacity of 9 kW at 4.5 K. Main cold components are composed of 300 tons of superconducting (SC) magnets, main cryostat thermal shields, and SC current feeder system. The HRS comprises six gas storage tanks, a liquid nitrogen tank, the room temperature compression sector, the cold box (C/B), the 1st stage helium distribution box (DB#1), the PLC base local control system interconnected to central control tower and so on. Between HRS and cold components, there's another distribution box (DB#2) nearby the KSTAR device. The entire KSTAR device was constructed in 2007 and has been operated since 2008. This paper will present the maintenance result of the KSTAR HRS during the campaign and discuss the operation record and maintenance history of the KSTAR HRS.

Mixed-mode simulation of switching characteristics of SiC DMOSFETs (Mixed-mode 시뮬레이션을 이용한 SiC DMOSFET의 스위칭 특성 분석)

  • Kang, Min-Seok;Choi, Chang-Yong;Bang, Wook;Kim, Sang-Chul;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.37-38
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    • 2009
  • SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

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Miniature Staircase-Shaped Wideband MIMO Antenna with Excellent Isolation, Compliant to the SAR Standard (SAR규격을 만족하는 우수한 격리도의 소형 계단구조 광대역 MIMO 안테나)

  • Kahng, Kyungseok;Yang, In-Kyu;Kahng, Sungtek
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.10
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    • pp.1413-1420
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    • 2013
  • This paper proposes a novel compact MIMO antenna which has miniaturized radiators and their row correlation coefficient, working for the LTE mobile communication, and its SAR is observed. Each of the proposed radiators has a shape of staircase and the bandwidth is twice larger than the conventional PIFA as 600MHz(21%) in 2.5 GHz - 3.15 GHz. And the area of the radiators is $16.5mm{\times}9.7mm$ proper for a handheld device. Also, by adding a planar mushroom decoupling structure between the radiators, the isolation is improved. The design has been carried out using the commercial full-wave time-domain EM solver and the finalized MIMO antenna has the return loss less than -10 dB in the LTE band, the isolation better than 20 dB and the efficiency more than 90% with the gain of 4.3 dB. Regarding the SAR of the antenna, it is observed that the average SAR value of 1g is estimated as 1.37W/Kg, which is lower than the SAR standard.

Highly Sensitive Tactile Sensor Using Single Layer Graphene

  • Jung, Hyojin;Kim, Youngjun;Jin, Hyungki;Chun, Sungwoo;Park, Wanjun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.229.1-229.1
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    • 2014
  • Tactile sensors have widely been researched in the areas of electronics, robotic system and medical tools for extending to the form of bio inspired devices that generate feeling of touch mimicking those of humans. Recent efforts in adapting the tactile sensor have included the use of novel materials with both scalability and high sensitivity [1]. Graphene, a 2-D allotrope of carbon, is a prospective candidate for sensor technology, having strong mechanical properties [2] and flexibility, including recovery from mechanical stress. In addition, its truly 2-D nature allows the formation of continuous films that are intrinsically useful for realizing sensing functions. However, very few investigations have been carrier out to investigate sensing characteristics as a device form with the graphene subjected to strain/stress and pressure effects. In this study, we present a sensor of vertical forces based on single-layer graphene, with a working range that corresponds to the pressure of a gentle touch that can be perceived by humans. In spite of the low gauge factor that arises from the intrinsic electromechanical character of single-layer graphene, we achieve a resistance variation of about 30% in response to an applied vertical pressure of 5 kPa by introducing a pressure-amplifying structure in the sensor. In addition, we demonstrate a method to enhance the sensitivity of the sensor by applying resistive single-layer graphene.

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A study on the basic experiment of performance criteria for application of pipe bursting method in actual field (Pipe Bursting 공법의 적용성 검토를 위한 주요 성능평가 항목의 기초실험연구)

  • Park, Sangbong;Kim, Kibum;Seo, Jeewon;Park, Sanghyuk;Koo, Jayong
    • Journal of Korean Society of Water and Wastewater
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    • v.32 no.5
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    • pp.435-443
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    • 2018
  • Most of aged water supply pipes have been replaced by the open cut method. However, this method has some limitations because water pipes, in many cases, are buried together with other underground facilities or are buried in the middle of high-traffic roads or in narrow alleyways where boring machines cannot be used. This research developed a pipe bursting device for small diameter pipes that enables pipe replacement without excavating the ground, by the busting of existing buried pipes followed by the traction and insertion of new pipes. As a results of examining the field applicability of the developed device, PE pipes and PVC pipes required the tractive force of 413.65~665.69 kgf and 457.43~791.35 kgf respectively, plus an additional 30 % tractive force per elbow. The proper number of bursting head was demonstrated that the connection of more than 2 heads could secure a stable bending radius of 15D. The developed device can be improved through field experiments involving various pipe types and pipe diameters, as well as presence/absence of elbow, so as to be utilized regardless of diverse variables according to the conditions of the soils surrounding existing pipes.

High Efficiency Tapered Waveguide Antenna for End-fire Optical Phased Array Device (종단방출형 광위상배열 장치를 위한 고효율 안테나)

  • Byeongchan Park;Nan Ei Yu
    • Korean Journal of Optics and Photonics
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    • v.34 no.6
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    • pp.235-240
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    • 2023
  • The optical signal injected into an end-fire optical phased array propagates along the waveguides inside the device and is emitted from the edge of the antenna. In general, reflection and scattering occur at the boundary, thereby reducing the emission efficiency of the optical signal. In this article, we propose a silicon nitride (Si3N4) tapered waveguide antenna structure whose width is tapered toward the emitting edge, achieving high emission efficiency operating at the 1,550 nm wavelength. The Si3N4 tapered waveguide antenna was numerically designed using the 3D finite-difference time-domain method. The optical signal emission efficiency increased from 78% to 96.3%, while reflectance decreased from 22% to 3.7% compared with the untapered waveguide antenna counterpart. This result will not only boost the optical signal intensity but also mitigate optical noise resulting from back reflection along the waveguide in the end-fire optical phased array device.