• Korean Journal of Computational Design and Engineering
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• v.22 no.2
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• pp.202-214
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• 2017

The augmented visualization of analysis results can play an import role as a post-processing tool for the modeling & simulation (M&S) technology. In particular, it is essential to develop such an M&S tool which can run on various multi-devices. This paper presents an augmented reality (AR) approach to visualizing and interacting with M&S post-processing results through mobile devices. The proposed approach imports M&S data, extracts analysis information, and converts the extracted information into the one used for AR-based visualization. Finally, the result can be displayed on the mobile device through an AR marker tracking and a shader-based realistic rendering. In particular, the proposed method can superimpose AR-based realistic scenes onto physical objects such as 3D printing-based physical prototypes in a seamless manner, which can provide more immersive visualization and natural interaction of M&S results than conventional VR or AR-based approaches. A user study has been performed to analyze the qualitative usability. Implementation results will also be given to show the advantage and effectiveness of the proposed approach.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.11
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• pp.24-34
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• 2019

An automotive automatic transmission is a popular power-transmitting device in passenger vehicles, as it provides various speed ratios for diverse driving conditions with easy manipulation and smooth gear shifting. The transmission is mainly composed of input and output shafts, planetary gear sets, brakes/clutches, and housing, and it yields multiple forward gears and one reverse gear by actuating the shifting devices of the brakes and clutches. In developing a new transmission, kinematic configurations of a transmission, which presents a brief structure and actuation schemes for speed ratios, need to be checked to determine if the structure can be assembled in a layout. It is impossible for a transmission concept having any interference in connecting main components to be developed further in the design process, since connection interference leads to failure of a layout design in the 2-D plane. In this research, an analysis of the assemblability of a front-wheel drive automatic transmission is carried out on an example concept design by applying the vertex addition algorithm based on graph theory.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.2
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• pp.86-92
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• 2021

Usually, the die-cast components used in small mobile devices require finishing processes, such as computer numerically controlled coating. In such cases, porosity is the most important defect. The shape of the molten aluminum that passes through the runner and gate in a mold is the one of the factors that influences gas porosity. To define the spurt index, which numerically indicates the shape of molten aluminum after the gate, Reynolds number and Ohnesorge number are used. Before die fabrication, computer-aided engineering analysis is performed to optimize the filling pattern. Finally, X-ray and surface inspection are performed after casting and machining to evaluate how the spurt index affects porosity and other product parameters. Based on the results obtained herein, a new gating system design process is suggested.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.66-71
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• 2022

The insulator used for the transmission line is a device that is bonded with a cap, pin, ceramic, and cement to withstand insulation capacity and mechanical load. The insulator design can help to reduce the dispersion of the electric field; thus, the optimization of today's design, especially as demanded power grows, is critical. The designs of four manufacturers were used to perform a comparative analysis. Under dry circumstances of the new product, an electric field distribution study was done with no pollutants attached. Manufacturer D's design has the best voltage uniformity of 24.33% and the arc length of 500 mm or more. Manufacturer C's design has an equalizing voltage of more than 2% higher than that of other manufacturers. The importance of the design of the insulator and the number of connections according to the installation conditions is very efficient for transmission lines that will increase in the future.

• Journal of the Korea Fashion and Costume Design Association
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• v.26 no.3
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• pp.65-80
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• 2024

The aim of this study is to develop smart fitness wear by designing and producing a prototype with integrated sensor modules, electrodes, and circuits. The research process was carried out in the following steps: 1) Selecting the positions of the sensors and electrodes based on preliminary research and exercise analysis, 2) Designing and creating patterns of smart fitness wear, 3) Designing the circuit diagram of smart fitness wear, 4) Producing the prototype, and 5) Evaluating wearability. The study reached the following key conclusions. First, the optimal placement of sensor modules and electrodes. Second, the functional design of the smart fitness wear. Third, improvements based on the usability evaluation. These research findings are expected to make a significant contribution to the future development of the fashion industry incorporating IT. The smart fitness wear developed in this study demonstrates the potential for integrating IT with the fashion industry. This product has the potential to be utilized not only in sportswear but also in various healthcare fields, enhancing user experience through personalized health management and tailored feedback.

• Geophysics and Geophysical Exploration
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• v.8 no.4
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• pp.262-269
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• 2005

Since the buried cultural relics are three-dimensional (3-D) objects in nature, 3-D survey is more preferable in archeological exploration. 3-D Ground Penetrating Radar (GPR) survey based on very dense data in principle, however, might need much higher cost and longer time of exploration than other geophysical methods commonly used for the archeological exploration, such as magnetic and electromagnetic methods. We developed a small-scale continuous data acquisition system which consists of two sets of GPR antennas and the precise positioning device tracking the moving-path of GPR antenna automatically and continuously. Since the high cost of field work may be partly attributed to establishing many profile lines, we adopted a concept of data acquisition at arbitrary locations not along the pre-established profile lines. Besides this hardware system, we also developed several software packages in order to effectively process and visualize the 3-D data obtained by the developed system and the data acquisition concept. Using the developed system, we performed 3-D GPR survey to investigate the possible historical remains of Baekje Kingdom at Buyeo city, South Korea, prior to the excavation. Owing to the newly devised system, we could obtain 3-D GPR data of this survey area having areal extent over about $17,000m^2$ within only six-hours field work. Although the GPR data were obtained at random locations not along the pre-established profile lines, we could obtain high-resolution 3-D images showing many distinctive anomalies, which could be interpreted as old agricultural lands, waterways, and artificial structures or remains. This cast: history led us to the conclusion that 3-D GPR method is very useful not only to examine a small anomalous area but also to investigate the wider region of the archeological interests.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.5
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• pp.500-504
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• 2023

In this study, the heteroepitaxial thin film growth of β-Ga₂O₃ was studied according to the position of the susceptor in mist-CVD. The position of the susceptor and substrate was moved step by step from the center of the hot zone to the inlet of mist in the range of 0~50 mm. It was confirmed that the average thickness increased to 292 nm (D1), 521 nm (D2), and 580 nm (D3) as the position of the susceptor moved away from the center of the hot zone region. The thickness of the lower region of the substrate is increased compared to the upper region. The surface roughness of the lower region of the substrate also increased because the nucleation density increased due to the increase in the lifetime of the mist droplets and the increased mist density. Therefore, thin film growth of β-Ga₂O₃ in mist-CVD is performed by appropriately adjusting the position of the susceptor (or substrate) in consideration of the mist velocity, evaporation amount, and temperature difference with the substrate, thereby determining the crystallinity of the thin film, the thickness distribution, and the thickness of the thin film. Therefore, these results can provide insights for optimizing the mist-CVD process and producing high-quality β-Ga₂O₃ thin films for various optical and electronic applications.

• Journal of the Institute of Convergence Signal Processing
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• v.7 no.3
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• pp.130-135
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• 2006

There have been experiments dealing with the possibility of the actualization of the ANC system by means of operating the DSP adaptation filter. This filter is composed of various filters(including X-LMS algorithm, Filter-U algorithm, and Full-Feedback-Filter-U algorithm) that use ventilation fans and loudspeakers as a primary source in a circular duct as an experimental device. In this operation, the ANC system using the X - LMS algorithm was found to be more effective in reducing noise than without such system. When applying the input signal of the DSP board Full Feedback-Filtered-U algorithm system while having in mind that the additionally installed second control signal was gone through feedback and mixed into the detection microphone installed near the ventilation fan when using the first ventilation fan, the system was not emitted, but maintained stable during the operation of the control filter. At this point, noise tended to decrease at a maximum of l0dB compared to other algorithms at the frequency band of 170-250Hz.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.599-602
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• 2005

In this paper, we have performed a study that modifies the CPW Pad configurations to improve an $f_{max}$ characteristic of metamorphic HEMT. To analyze the CPW Pad structures of MHEMT, we use the ADS momentum simulator developed by $Agilent^{TM}$. Comparing the employed structure (G/W = 40/100 m), the optimized structure (G/W = 20/25 m) of CPW MHEMT shows the increased $S_{21}$ by 2.5 dB, which is one of the dominant parameters influencing the $f_{max}$ of MHEMT. To compare the performances of optimized MHEMT with the employed MHEMT, DC and RF characteristics of the fabricated MHEMT were measured. In the case of optimized CPW MHEMT, the measured saturated drain current density and transconductance $(g_m)$ were 693 mA/mm and 647 mS/mm, respectively. RF measurements were performed in a frequency range of $0.1{\sim}110$ GHz. A high $S_{21}$ gain of 5.5 dB is shown at a millimeter-wave frequency of 110 GHz. Two kinds of RF gains, $h_{21}$ and maximum available gain (MAG), versus the frequency, and a cut-off frequency ($f_t$) of ${\sim}154$ GHz and a maximum frequency of oscillation ($f_{max}$) of ${\sim}358$ GHz are obtained, respectively, from the extrapolation of the RF gains for a device biased at a peak transconductance. An optimized CPW MHEMT structure is one of the first reports among fabricated 0.1 m gate length MHEMTs.