• Title/Summary/Keyword: Device to Device (D2D)

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Robust multi-objective optimization of STMD device to mitigate buildings vibrations

  • Pourzeynali, Saeid;Salimi, Shide;Yousefisefat, Meysam;Kalesar, Houshyar Eimani
    • Earthquakes and Structures
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    • v.11 no.2
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    • pp.347-369
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    • 2016
  • The main objective of this paper is the robust multi-objective optimization design of semi-active tuned mass damper (STMD) system using genetic algorithms and fuzzy logic. For optimal design of this system, it is required that the uncertainties which may exist in the system be taken into account. This consideration is performed through the robust design optimization (RDO) procedure. To evaluate the optimal values of the design parameters, three non-commensurable objective functions namely: normalized values of the maximum displacement, velocity, and acceleration of each story level are considered to minimize simultaneously. For this purpose, a fast and elitist non-dominated sorting genetic algorithm (NSGA-II) approach is used to find a set of Pareto-optimal solutions. The torsional effects due to irregularities of the building and/or unsymmetrical placements of the dampers are taken into account through the 3-D modeling of the building. Finally, the comparison of the results shows that the probabilistic robust STMD system is capable of providing a reduction of about 52%, 42.5%, and 37.24% on the maximum displacement, velocity, and acceleration of the building top story, respectively.

Numerical simulation of tensile failure of concrete using Particle Flow Code (PFC)

  • Haeri, Hadi;Sarfarazi, Vahab
    • Computers and Concrete
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    • v.18 no.1
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    • pp.39-51
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    • 2016
  • This paper considers the tensile strength of concrete samples in direct, CTT, modified tension, splitting and ring tests using both of the experimental tests and numerical simulation (particle flow code 2D). It determined that which one of indirect tensile strength is close to direct tensile strength. Initially calibration of PFC was undertaken with respect to the data obtained from Brazilian laboratory tests to ensure the conformity of the simulated numerical models response. Furthermore, validation of the simulated models in four introduced tests was also cross checked with the results from experimental tests. By using numerical testing, the failure process was visually observed and failure patterns were watched to be reasonable in accordance with experimental results. Discrete element simulations demonstrated that the macro fractures in models are caused by microscopic tensile breakages on large numbers of bonded discs. Tensile strength of concrete in direct test was less than other tests results. Tensile strength resulted from modified tension test was close to direct test results. So modified tension test can be a proper test for determination of tensile strength of concrete in absence of direct test. Other advantages shown by modified tension tests are: (1) sample preparation is easy and (2) the use of a simple conventional compression press controlled by displacement compared with complicate device in other tests.

Tribological properties of sputtered boron carbide coating and the effect of $CH_4$ reactive component of processing gas

  • Cuong Pham Duc;Ahn Hyo-Sok;Kim Jong-Hee;Shin Kyung-Ho
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2003.11a
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    • pp.78-84
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    • 2003
  • Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a $B_4C$ target with As as processing gas. Various amounts of methane gas $(CH_4)$ were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that $CH_4$ addition to As processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of $CH_4$, gas component from 0 to $1.2\;vol\;\%$. By adding a sufficient amount of $CH_4\;(1.2\%)$ in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

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An Analysis of Flow Phenomena in Shock Tube System Design(I)-Comparison of Experimental and Computation Result- (충격파관 장치설계를 위한 유동현상의 해석(1)-계산치와 실험치의 비교-)

  • 정진도;수곡행부
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.18 no.5
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    • pp.1218-1226
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    • 1994
  • The shock tube is a useful device for investigating shock phenomena, spray combustion, unsteady gas dynamics, etc. Therefore, it is necessary to analyze exactly the flow phenomena in shock tube. In this study, the mechanics of its reflected shock zone has been investigated by using of the one-dimensional gas dynamic theory in order to estimate the transition from initial reflection of shock wave region. Calulation for four kinds of reflected shock tube temperature (i.e. (a) 1388 K (b) 1276 K (c) 1168 K (d) 1073 K) corresponding to the experimental conditions have been carried out sumarized as follows. (1) The qualitative tendency is almost the same as in that conditions in region of reflected wave region. (2) High temperature period (reflected shock wave temperature) $T_{5}$, exists 0-2.65 ms. (3) Transition period from temperature of reflection shock wave is far longer than the calculated one. This principally attributed to the fact that the contact surface is accelerated, also, due to the release of energy by viscoity effect. This apparatus can advance the ignition process of a spray in a ideal condition that involved neither atomization nor turbulent mixing process, where, using a shock tube, a column of droplets freely from atomizer was ignited behind a reflected shock.

A Fast Processor Architecture and 2-D Data Scheduling Method to Implement the Lifting Scheme 2-D Discrete Wavelet Transform (리프팅 스킴의 2차원 이산 웨이브릿 변환 하드웨어 구현을 위한 고속 프로세서 구조 및 2차원 데이터 스케줄링 방법)

  • Kim Jong Woog;Chong Jong Wha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.4 s.334
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    • pp.19-28
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    • 2005
  • In this paper, we proposed a parallel fast 2-D discrete wavelet transform hardware architecture based on lifting scheme. The proposed architecture improved the 2-D processing speed, and reduced internal memory buffer size. The previous lifting scheme based parallel 2-D wavelet transform architectures were consisted with row direction and column direction modules, which were pair of prediction and update filter module. In 2-D wavelet transform, column direction processing used the row direction results, which were not generated in column direction order but in row direction order, so most hardware architecture need internal buffer memory. The proposed architecture focused on the reducing of the internal memory buffer size and the total calculation time. Reducing the total calculation time, we proposed a 4-way data flow scheduling and memory based parallel hardware architecture. The 4-way data flow scheduling can increase the row direction parallel performance, and reduced the initial latency of starting of the row direction calculation. In this hardware architecture, the internal buffer memory didn't used to store the results of the row direction calculation, while it contained intermediate values of column direction calculation. This method is very effective in column direction processing, because the input data of column direction were not generated in column direction order The proposed architecture was implemented with VHDL and Altera Stratix device. The implementation results showed overall calculation time reduced from $N^2/2+\alpha$ to $N^2/4+\beta$, and internal buffer memory size reduced by around $50\%$ of previous works.

A Single-Flux-Quantum Shift Register based on High-T$_c$ Superconducting Step-edge Josephson Junctions

  • Sung, G.Y.;Choi, C.H.;Suh, J.D.;Han, S.K.;Kang, K.Y.;Hwang, J.S.;Yoon, S.G.;Jung, K.R.;Lee, Y.H.;Kang, J.H.;Kim, Y.H.;Hahn, T.S.
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.133-133
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    • 1999
  • We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-T$_c$ superconducting (HTS) YBa$_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height t/h. The spread of step-edge junction parameters was measured from each13 junctions with t/h=l/3, l/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K..

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A Single-Flux-Quantum Shift Register based on High-$T_c$ Superconducting Step-edge Josephson Junctions

  • Sung G.Y.;Choi, C.H.;Suh J.D.;Han, S. K.;Kang, K.Y.;Hwang, J.S.;Yoon, S.G.;Jung, K.R.;Lee, Y.H.;Kang, J.H.;Kim, Y.H.;Hahn, T.S.
    • Progress in Superconductivity
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    • v.1 no.1
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    • pp.31-35
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    • 1999
  • We have fabricated and tested a simple circuit of the rapid single-flux-quantum(RSFQ) four-stage shift register using a single layer high-$T_c$ superconducting (HTS) $YBa_2Cu_3O_{7-x}$ (YBCO) thin film structure with 9 step-edge Josephson junctions. The circuit includes two read superconducting quantum interference devices(SQUID) and four stages. To establish a robust HTS RSFQ device fabrication process, we have focussed on the reproducible process of sharp and straight step-edge formation as well as the ratio of film thickness to step height, t/h. The spread of step-edge junction parameters was measured from each 13 junctions with t/h=1/3, 1/2, and 2/3 at various temperatures. We have demonstrated the simplified operation of the shift register at 65 K.

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Fabrication and Properties of MFISFET Using $LiNbO_3$ Ferroelectric Films ($LiNbO_3$ 강유전체를 이용한 MFISFET의 제작 및 특성)

  • Jung, Soon-Won;Koo, Kyung-Wan
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.57 no.2
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    • pp.135-139
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    • 2008
  • MFISFETs with platinum electrode on the $LiNbO_3$/aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. $I_D-V_G$ characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of $LiNbO_3$ films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[$cm^2/V{\cdot}s$] and 0.16[mS/mm], respectively. The drain current of 27[${\mu}A$] on the "on" state was more than 3 orders of magnitude larger than that of 30[nA] on the "off" state at the same "read" gate voltage of l.5[V], which means the memory operation of the MFISFET.

Effect of Hydrogen in Rapid Thermal Annealing on the Graphene-Zinc Oxide Electrode for Supercapacitor (슈퍼커패시터용 그래핀-산화아연 전극의 급속열처리에서 수소의 영향)

  • Jeong, Woo-Jun;Oh, Ye-Chan;Kim, Sang-Ho
    • Journal of Surface Science and Engineering
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    • v.52 no.3
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    • pp.123-129
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    • 2019
  • With recent demand for the renewable energy resources, we conducted a research on the energy conversion and storage device of supercapacitor. The hybrid graphene-zinc oxide(GZO) electrodes for the supercapacitors (SCs) were fabricated and investigated. To increase the electrical conductivity of the GZO electrode, the rapid thermal annealing(RTA) in $Ar/H_2$(10%) atmosphere was applied and the effect was examined by comparing it with RTA at Ar atmosphere. In Raman spectroscopy, the electrodes annealed at 400? in $Ar/H_2$ atmosphere showed a lower ratio of D/G peak than that of annealed at Ar atmosphere, and had a larger specific capacitance(Sc) in the cyclic voltammetry(CV), and a lower the equivalent series resistance(ESR) in the electrochemical impedance spectroscopy(EIS). The reason seems to come from the better mixing of the graphene and zinc oxide by the RTA in $Ar/H_2$(10%).

An Explicit Superconcentrator Construction for Parallel Interconnection Network (병렬 상호 연결망을 위한 초집중기의 구성)

  • Park, Byoung-Soo
    • The Transactions of the Korea Information Processing Society
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    • v.5 no.1
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    • pp.40-48
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    • 1998
  • Linear size expanders have been studied in many fields for the practical use, which make it possible to connect large numbers of device chips in both parallel communication systems and parallel computers. One major limitation on the efficiency of parallel computer designs has been the highly cost of parallel communication between processors and memories. Linear order concentrators can be used to construct theoretically optimal interconnection network schemes. Existing explicitly defined constructions are based on expanders, which have large constant factors, thereby rendering them impractical for reasonable sized networks. For these objectives, we use the more detailed matching points in permutation functions, to find out the bigger expansion constant from an equation, $\mid\Gamma_x\mid\geq[1+d(1-\midX\mid/n)]\midX\mid$. This paper presents an improvement of expansion constant on constructing concentrators using expanders, which realizes the reduction of the size in a superconcentrator by a constant factor. As a result, this paper shows an explicit construction of (n, 5, $1-\sqrt{3/2}$) expander. Thus, superconcentrators with 209n edges can be obtained by applying to the expanders of Gabber and Galil's construction.

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