• Journal of Information Technology Services
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• v.11 no.sup
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• pp.51-60
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• 2012

In this paper, we provide the analysis of device model and method between device models for compatible M&S V&V of the NetSPIN. First of all, we analysis features, structure, and classification of the NetSPIN. The second, as a part of reliable V&V process, we analysis network system modeling process, correlation between device modeling process for M&S of the NetSPIN. The third, we suggest making a kind of pool of reference model and module of devices for the increase factor of reuse between device model. We also, at the point view of M&S V&V, conclude that there is the validity of the fidelity in device modeling process. Through the analysis of the NetSPIN device model and suggestion of the method for higher compatibility between device modes, the development process of device model be clearly understood. Also we present the effective method of the development for reliable device mode as the point of V&V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.49-52
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• 1998

In this paper, to implement the electrical equivalent modeling of powder electroluminescent device, capacitate equation of device was chosen. The conventional structure device which have dielectric and phosphor layer between electrodes, and the single emission structure device which means that dielectric and phosphor were mixed between electrodes, were investigated. As a result, it was possible to make the equation that is transferred capacitance to phosphor layer, and using measured brightness efficiency and conductivity of devices was calculated.

• Journal of Advanced Navigation Technology
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• v.24 no.4
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• pp.314-321
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• 2020

Logic automated stimulus and response (LASAR) software is an automatic test program development tool for logic function test and fault detection of avionics components digital circuit cards. LASAR software needs to the information for the logic circuit function and input and output of the device. If there is no component information, normal component modeling is impossible. In this paper, component modeling is carried out through reverse design of programmable logic device (PLD) device without element information. The developed LASAR program identified failure detection rates through fault simulation results and single-seated fault insertion methods. Fault detection rates have risen by 3% to 91% for existing limited modeling and 94% for modeling through the reverse design. Also, the 22 case of stuck fault with the I/O pin of EP310 PLD were detected 100% to confirm the good performance.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.306-311
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• 2003

In this paper, we modeled the incident beam in order to analyze and evaluate the optical thin film device for wavelength division multiplexing in optical telecommunication network. As applied ray tracing method to the optical path, we were compared the accuracy of coupling efficiency simulated by two modeling methods. In the results of sinulation, ceil modeling method was preferred to annual modeling method in micro-optic device because of accuracy for coupling efficiency and Gaussian intensity distribution. In the results of optimal simulation for optical device using thin film filter, the distance (d1) between optical fiber and GRIN lens, the distance (d2) between GRIN lens and thin film filter and the coupling efficiency were 0.24 mm, 0.25 mm and -0.11 ㏈ respectively. As d2 was displaced at 0.25 mm and d1 was varied in order to evaluate the optimal value, d1 and maximum coupling efficiency were 0.24 mm and -0.35㏈, respectively. Then the results of experiment were corresponded to that of optimal simulation by cell modeling and it was possible to analyze the performance for optical device using thin film filter by the simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.241-245
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• 2001

In this paper, we present parameter optimization technique for GaAs/AlGaAs multiple quantum well avalanche photodiodes used for image capture mechanism in high-definition system. Even under flawless environment in semiconductor manufacturing process, random variation in process parameters can bring the fluctuation to device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. This paper will first use experimental design and neural networks to model the nonlinear relationship between device process parameters and device performance parameters. The derived model was then put into genetic algorithms to acquire optimized device process parameters. From the optimized technique, we can predict device performance before high-volume manufacturign, and also increase production efficiency.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.780-783
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• 2004

The two-dimensional modeling of the non-stationary thermal state and voltage responsivity of the sensitive elements usually used in solid-state pyroelectric focal plane arrays are presented. Temperature distributions under periodical thermal excitation and the response of the thermal imaging device, which is composed of the pyroelectric sensitive elements mounted on a single silicon substrate, are numerically calculated. The sensitive element consists of a covering metal layer, infrared polymer absorber, front metal contact, sensitive pyroelectric element, the interconnecting column and the bulk silicon readout. The results of the numerical modeling show that the thermal crosstalk between sensitive elements to be critical especially at low frequency (f < 10Hz) of periodically modulated light. It is also shown that the use of our models gives the possibility to improve the design, operating regimes and sensitivity of the device.

• Korean Journal of Computational Design and Engineering
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• v.19 no.2
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• pp.191-201
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• 2014

A 3D CAD system that can be used on a smart device is proposed. Smart devices are now a part of everyday life and also are widely being used in various industry domains. The proposed 3D CAD system would allow modeling in a rapid and intuitive manner on a smart device when an engineer makes a 3D model of a product while moving in an engineering site. There are several obstacles to develop a 3D CAD system on a smart device such as low computing power and the small screen of smart devices, imprecise touch inputs, and transfer problems of created 3D models between PCs and smart devices. The author discusses the system design of a 3D CAD system on a smart device. The selection of the modeling operations, the assignment of touch gestures to these operations, and the construction of a geometric kernel for creating both meshes and a procedural CAD model are introduced. The proposed CAD system has been implemented for validation by user tests and to demonstrate case studies using test examples. Using the proposed system, it is possible to produce a 3D editable model swiftly and simply in a smart device environment to reduce design time of engineers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.29-34
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• 2006

In order to design an OLED(Organic Luminescent Emitting Device) evaporation system, geometric simulation of film thickness distribution profile is required. For the OLED evaporation process, thin film thickness uniformity is of great practical importance. In this paper, a geometric modeling algorithm is introduced for process simulation of the OLED evaporating process. The physical fact of the evaporating process is modeled mathematically. Based on the developed method, the thickness of the thin-film layer can be successfully controlled.

• ETRI Journal
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• v.27 no.5
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• pp.628-634
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• 2005

From AC analysis results utilizing a 2-dimensional device simulator, we extracted an AC-equivalent circuit of a grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection device. The extracted equivalent circuit is utilized to analyze the effects of the parasitics in a ggNMOS protection device on the characteristics of a low noise amplifier (LNA). We have shown that the effects of the parasitics can appear exaggerated for an impedance matching aspect and that the noise contribution of the parasitic resistances cannot be counted if the ggNMOS protection device is modeled by a single capacitor, as in prior publications. We have confirmed that the major changes in the characteristics of an LNA when connecting an NMOS protection device at the input are reduction of the power gain and degradation of the noise performance. We have also shown that the performance degradation worsens as the substrate resistance is reduced, which could not be detected if a single capacitor model is used.