• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.210-215
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• 1994

In the CMOS device, Counter doping is needed to adjust threshold voltage because of the difference between n-MOSFET and p-MOSFET well doping concentration when n+ polysilicon gate is used. Therefore buried channel is formed in the p-channel MOSFET degrading properties. So well doping concentration and doping condition should be considered in fabrication process and device design. Here we are to extract the initial process condition using simulation and fabricate p-MOSFET device and then compare the subthreshold characteristics of simulated and fabricated device.

• 센서학회지
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• 제18권2호
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• pp.154-159
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• 2009

This paper describes two methods - stamp-to-stick bonding and microtransfer molding - to integrate microfluidic channel into an optoelectrofluidic device for in-channel microparticle manipulation. We have demonstrated the optoelectronic microparticle manipulation in the channel-integrated optoelectrofluidic device using a liquid crystal display. As injecting a liquid sample containing $15{\mu}m$-diameter polystyrene particles into the fabricated channel, trapping and transport of individual microparticles have been successfully demonstrated. This channel-integrated optoelectrofluidic device may be useful for several in-channel applications based on the optoelectrofluidics such as optoelectronic flow control, droplet-based protein assay and bead-based immunoassay.

• 한국진공학회지
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• 제1권1호
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• pp.206-211
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• 1992

SIMOX SOI structures were formed by oxygen ion implantation with a dose of 2 1018 ions/cm2 at 180kev and post-implantation annealing at $1250^{\circ}C$ for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOI layer was discussed. And the limiting factor to the decrease of the precipitates during post-implantation annealing was discussed also.

• 대한전기학회논문지
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• 제33권4호
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• pp.157-163
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• 1984

The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.662-664
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• 1999

We fabricated AC-TFEL device having cone-shaped Si micro-tip reflector array based on the process which have been conventionally employed for the Si-tip field emitter array in FED system. As a result, the AC-TFEL device having a new geometrical structure could generate well concentrated visible white-light from 3600 reflectors/pixel under bipolar pulse excitation mode only by edge-emission mechanism.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• Transactions on Electrical and Electronic Materials
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• 제17권4호
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• pp.222-226
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• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• 한국소음진동공학회논문집
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• 제18권11호
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• pp.1128-1133
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• 2008

Cellulose based electroactive paper(EAPap) has been developed as a new smart material due to its advantages of piezoelectricity, large displacement, low power consumption, low cost and flexibility. EAPap can be used for a surface acoustic wave (SAW) device using the piezoelectric property of EAPap, resulting in the cost effective and flexible SAW device. In this paper, inter digit transducer(IDT) structure using lift-off technique with a finger gap of 10mm was used for micro fabrication of the cellulose EAPap SAW devices. The performance of IDT patterned SAW device was characterized by a Network Analyzer. The feasibility of cellulose EAPap as a potential acoustic device was presented and explained.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.466-471
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• 2004

In focused-ion-beam (FIB) application of micromachining and device transplantation, four kinds of FIB processes, namely FIB sputtering, FIB-induced etching, redeposition, and FIB-induced deposition, are well utilized. As with FIB systems, scanning electron microscopes(SEMs) were extensively used in the semiconductor industry. They are the tools of choice for defect review and providing the image resolution needed for process monitoring. The enhanced capabilities of a dual-column on one chamber system are quickly becoming realized by the nano industry for performing a wide range of application.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.251-255
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• 2003

This paper presents the design, fabrication, and calibration of a piezoelectric polymer-based sensorized microgripper. Electro discharge machining technology is employed to fabricate super-elastic alloy based micro gripper. It is tested to present improvement of mechanical performance. For integration of force sensor on the micro gripper, the sensor design based on the piezoelectric polymer PVDF film and fabrication process are presented. The calibration and performance test of force sensor integrated micro gripper are experimentally carried out. The force sensor integrated micro gripper is applied to perform fine alignment tasks of micro opto-electrical components. It successfully supplies force feedback to the operator through the haptic device and plays a main role in preventing damage of assembly parts by adjusting the teaching command.