• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.673-681
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• 2014

In this paper, a novel low specific on-resistance SOI LDMOS Device with P+P-top layer in the drift region is proposed and investigated using a two dimensional device simulator, MEDICI. The structure is characterized by a heavily-doped $P^+$ region which is connected to the P-top layer in the drift region. The $P^+$ region can modulates the surface electric field profile, increases the drift doping concentration and reduces the sensitivity of the breakdown voltage on the geometry parameters. Compared to the conventional D-RESURF device, a 25.8% decrease in specific on-resistance and a 48.2% increase in figure of merit can be obtained in the novel device. Furthermore, the novel $P^+P$-top device also present cost efficiency due to the fact that the $P^+$ region can be fabricated together with the P-type body contact region without any additional mask.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.284-288
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• 2013

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

• Journal of Advanced Navigation Technology
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• v.18 no.6
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• pp.625-632
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• 2014

The u-health service is using portable device such as smart device and it consists of small computing device. The u-health service carry out same performance with desktop computer. We designed message structure based on Bluetooth HDP. This message structure is used to transmit patient's biometric data on the smart device of medical team, patient and family over the mobile network environment. ISO/IEEE 11073 PHD standard was defined based on the method of communication between the agent and the manager. And We are confirmed the reliable transmission of biometric data at the smart device by implementing the android OS based patient information monitoring application to check the status of patient for medical team, patient and family.

• Journal of the Korean Graphic Arts Communication Society
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• v.28 no.2
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• pp.117-128
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• 2010

Advancements in digital image have put high quality digital camera into the hands of many image professionals and consumers alike. High quality digital camera images consist originally of raw which have a set of color rendering operation applied to them to produce good images. With color rendering, the raw file was converted to Adobe RGB and sRGB color space. Also color rendering can incorporate factor such as white balance, contrast, saturation. Therefore, in this paper we conduct a study on production of optimum profile considered color rendering in digital camera. To do the experiment, the images were Digital ColorChecker SG target and ColorChecker DC target. A profiling tool was ProfileMaker 5.03. The results were analyzed by comparing in color gamut of $CIEL^*a^*b^*$ color space and calculating ${\Delta}E^*_{ab}$. Also results were analyzed in terms of different $CIEL^*a^*b^*$ color space quadrants based on lightness, chroma.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Biomaterials and Biomechanics in Bioengineering
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• v.2 no.2
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• pp.71-84
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• 2015

A low-profile flow sensor has been designed, fabricated, and characterized to demonstrate the feasibility for monitoring hemodynamics in cerebral aneurysm. The prototype device is composed of three micro-membranes ($500-{\mu}m$-thick polyurethane film with $6-{\mu}m$-thick layers of nitinol above and below). A novel super-hydrophilic surface treatment offers excellent hemocompatibility for the thin nitinol electrode. A computational study of the deformable mechanics optimizes the design of the flow sensor and the analysis of computational fluid dynamics estimates the flow and pressure profiles within the simulated aneurysm sac. Experimental studies demonstrate the feasibility of the device to monitor intra-aneurysmal hemodynamics in a blood vessel. The mechanical compression test shows the linear relationship between the applied force and the measured capacitance change. Analytical calculation of the resonant frequency shift due to the compression force agrees well with the experimental results. The results have the potential to address important unmet needs in wireless monitoring of intra-aneurysm hemodynamic quiescence.

• Nuclear Engineering and Technology
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• v.51 no.2
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• pp.510-517
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• 2019

Increasing proliferation resistance of plutonium by way of increased $^{238}Pu$ content is of interest to the nuclear nonproliferation and international safeguards community. Considering the high alpha decay heat of $^{238}Pu$, increasing the isotopic fraction leads to a noticeably higher amount of heat generation within the plutonium. High heat generation is especially unattractive in the scenario of weaponization. Upon weaponization of the plutonium, the plutonium may generate enough heat to elevate the temperature in the high explosives to above its self-explosion temperature, rendering the weapon useless. In addition, elevated temperatures will cause thermal expansion in the components of a nuclear explosive device that may produce thermal stresses high enough to produce failure in the materials, reducing the effectiveness of the weapon. Understanding the technical limit of $^{238}Pu$ required to reduce the possibility of weaponization is key to reducing the current limit on safeguarded plutonium (greater than 80 at. % $^{238}Pu$). The plutonium vector evaluated in this study was found by simulating public information on Lightbridge's fuel design for pressurized water reactors. This study explores the temperature profile and maximum stress within a simple (first generation design) hypothetical nuclear explosive device of four unique scenarios over time. Analyzing the transient development of both the temperature profile and maximum stress not only establishes a technical limit on the $^{238}Pu$ content, but also establishes a time limit for which each scenario would be useable.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.11
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• pp.2135-2142
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• 2007

Mobile device will be able to use the various contents from the advancement of the wireless Internet and mobile device manufacture technique. Each devices is HTTP headers about under using provides device information to contents provider in the provide the contents. However, There is no standard for device information provided, so interoperability problems, because external contents using mobile phone companies to provide the device information in a different way. International Organization for Standard OMA UAProf about under using it solved interoperability problems from outside. However, in using the UAProf can not provide for the complete device information, because MMS support information, smart card support, information and support for external storage is not specified. Thus, In this paper, we designed UAProf in base which provides the contents which has become optimize to the mobile device of domestic environment the mobile device description language which expresses device information which is necessar, and it used to design and implementation of the Contents Adaptation System.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.964-967
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• 2001

Aspherical lens with the higher numerical aperture has been needed in the optical storage device to increase the recording density on the disk. However, high numerical aperture means the large slope angle at the clear aperture of the lens. Therefore, the measurement and manufacturing technique including the lens molding process for the slope angle should be developed. In this paper, the evaluation technique was described for the optical performance of the aspherical lens. Aspherical form error brings about the wavefront error and the side lobe of the beam intensity profile. A schematic diagram of the aspherical lens manufacturing was drawn to explain the aspherical form error compensation. Finally, form error of the aspherical lens was defined and plotted using the raw data of the Formtalysurf.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.12-17
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• 2004

The body-tied FinFETs (bulk FinFETs) implemented on bulk Si substrate were characterized through 3-dimensional device simulation. By controlling the doping profile along the vertical fin body, the bulk FinFETs can be scaled down to sub-30 nm. Device characteristics with the body shape were also shown. At a contact resistivity of $1{\times}10^{-7}\;{\Omega}\;cm^2$, the device with side metal contact of fin source/drain showed higher drain current by about two. The C-V results were also shown for the first time.