JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design Consideration of Body-Tied FinFETs (${\Omega}$ MOSFETs) Implemented on Bulk Si Wafers

  • Han, Kyoung-Rok (School of Electronic Electrical Engineering, Kyungpool National University) ;
  • Choi, Byung-Gil (School of Electronic Electrical Engineering, Kyungpool National University) ;
  • Lee, Jong-Ho (School of Electronic Electrical Engineering, Kyungpool National University)
  • Published : 2004.03.31
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Abstract

The body-tied FinFETs (bulk FinFETs) implemented on bulk Si substrate were characterized through 3-dimensional device simulation. By controlling the doping profile along the vertical fin body, the bulk FinFETs can be scaled down to sub-30 nm. Device characteristics with the body shape were also shown. At a contact resistivity of $1{\times}10^{-7}\;{\Omega}\;cm^2$, the device with side metal contact of fin source/drain showed higher drain current by about two. The C-V results were also shown for the first time.

Keywords

References

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