• Journal of Korea Water Resources Association
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• v.44 no.9
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• pp.731-740
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• 2011

An acoustic velocity profiler is developed, which is able to be used for open-channel flow measurement. It measures flow velocity based Doppler effect on acoustic signals, which is estimated by using pulse repetition frequency technique. Laboratory and field tests were made to verify velocity measuring performance of the developed device. It is confirmed that the acoustic velocity profiler can normally measure vertical velocity profile in the range above 0.1 m from the bottom and has equivalent performance to commercial acoustic velocity measuring devices.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1286-1293
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• 1988

A general closed form expression for the channel length of the self-aligned double-diffused MOS transistor is obtained from the 2-dimensional Gaussian doping profile. The proposed model in this paper is composed of the doping concentration of the substrate, the final surface doping concentration and the vertical junction depth of the each double-diffused region. The calculated channel length is in good agreement with the experimental results. Also, the optimum channel structure for the prevention of the channel puncthrough is obtained by the averaged doping concentration in the channel region. A correspondence between the results of device simulation of channel punchthrough and the estimations of simplified model is confirmed.

• Proceedings of the Korean Society of Computer Information Conference
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• 2013.07a
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• pp.361-363
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• 2013

본 논문에서는 최근 스마트 헬스케어가 보건의료서비스에 특화시켜 환자와 의사가 직 간접적으로 진료를 할 수 있게끔 하는 스마트폰 환경에서의 원격진료 서비스가 부각됨에 따라 유무선 통신 인프라를 기반으로 노인, 만성질환자, 회복중인 환자나 수술 후 환자 그리고 일반인 등이 일상생활을 하면서 불편하거나, 거추장스럽지 않게 신체 정보를 측정하고 건강상태의 변화에 대한 전문가의 진단을 즉각적으로 제공하기 위해 Bluetooth HDP(Health Device Profile)을 통해 IEEE11073 PHD 표준 기반의 홈 헬스케어 의료기기 연결성을 보장하며, HL7 CDA 기반의 정보 전달 구조로 의료진뿐만 아니라 다양한 스마트 앱 어플리케이션 간의 융합을 가능하게 하는 스마트 헬스케어 솔루션을 설계하고자 한다.

• Journal of the Korean Society of Propulsion Engineers
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• v.12 no.2
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• pp.33-39
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• 2008

To improve the mixing efficiency and to reduce the pressure loss, it is needed to develope a new mixing device for supersonic combustion. The vent mixer is introduced as the new supersonic fuel-air mixer. Computational analyses, that include pressure profile, density contour, and streamline tracing, have been carried out. The expansion wave generates at the end of the extended upper wall of the mixer. And it reduces the shock wave from the hole. Incoming air flow through the hole makes several recirculation regions which increase the mixing efficiency, and the separation region at the downward wall expends the boundary layer which reduces the pressure loss.

• Journal of the Korean Geosynthetics Society
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• v.15 no.1
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• pp.71-81
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• 2016

To evaluate the effects of magnetic force for transporting the dredged soil, magnetic energy inducing device was installed at the dredger. The whole length of transporting pipeline reaches more than 8.5km and the efficiency of the system and the characteristics of the flow are critical factors. The main parameters which govern the flow are flow-rate, velocity, concentration and slip-layer's condition, so in the field test monitoring system was applied to check the real time conditions of the closed circuit flow and the main parameters. From analyzing the relation between the dredged soil amounts and the pump power, it can be concluded that the magnetic forces effect on the transporting system, increase the transporting quantities of dredged soil and decrease power consumption of the pump.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.37-45
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• 1998

In this paper, we report the first three-dimensional simulation result of the transient enhanced diffusion(TED) of dopants in the ion-implanted silicon by employing our 3D semiconductor process simulator, INPROS system. In order to simulate three-dimensional TED redistribution of dopants in silicon, the dopant distributions after the ion implantation was calculated by Monte Carlo(MC) method, followed by finite element(FE) numerical solver for thermal annealing. Excellent agreement between the simulated 3D profile and the SIMS data has been obtained for ion-implanted arsenic and phosphorus after annealing the boron marker layer at 75$0^{\circ}C$ for 2 hours. Our three-dimensional TED simulation could successfully explain the reverse short channel effect(RSCE) by taking the 3D point defect distribution into account. A coupled TED simulation and device simulation allows reverse short channel effect on threshold to be accurately predicted.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.162-168
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• 2006

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.

• Journal of the Optical Society of Korea
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• v.13 no.2
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• pp.251-255
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• 2009

In the non-contact 3-dimensional (3D) shape measurements, the fringe pattern projection method based on the phase-shifting technique has been considered very effective for its high speed and accuracy. The digital fringe projector in particular has great flexibility in generating fringe patterns since the patterns can be controlled easily by the computer program. In this work, we have developed a high-speed digital laser grating projection system using a laser diode and a polygon mirror, and evaluated its performance. It has been demonstrated that all the optical measurements required to find out the profile of a 3D object could be carried out within 31 ms, which confirmed the validity of our 3D measurement system. The result implies the more important fact that the speed in 3D measurement can be enhanced remarkably since, in our novel system, there is no device like a LCD or DMD whose response time limits the measurement speed.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.10
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• pp.183-190
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• 2003

Major device failures such as die cracking, interfacial delamination and warpage in flip chip packages are due to excessive heat and thermal gradients- There have been significant researches toward understanding the thermal performance of electronic packages, but the majority of these studies do not take into account the combined effects of thermo-mechanical interactions of the different package constituents. This paper investigates the thermo-mechanical performance of flip chip package constituents based on the finite element method with thermo-mechanically coupled elements. Delaminations with different lengths between the silicon die and underfill resin interfaces were introduced to simulate the defects induced during the assembly processes. The temperature gradient fields and the corresponding stress distributions were analyzed and the results were compared with isothermal case. Parametric studies have been conducted with varying thermal conductivities of the package components, substrate board configurations. Compared with the uniform temperature distribution model, the model considering the temperature gradients provided more accurate stress profiles in the solder interconnections and underfill fillet. The packages with prescribed delaminations resulted in significant changes in stress in the solder. From the parametric study, the coefficients of thermal expansion and the package configurations played significant roles in determining the stress level over the entire package, although they showed little influence on stresses profile within the individual components. These observations have been implemented to the multi-board layer chip scale packages (CSP), and its results are discussed.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.93-97
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• 2011

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 ${\mu}M$ standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 ${\mu}M$. The drain current ($I_{ON}$), transconductance ($g_m$), substrate current ($I_{SUB}$), drain to source leakage current ($I_{OFF}$), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved $I_{ON}$ and $g_m$ characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and $I_{OFF}$ characteristics.