• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.687-694
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• 2008

This paper is focused on the improvement of MOS device reliability related to deuterium process. The injection of deuterium into the gate oxide film was achieved through two kind of method, high-pressure annealing and low-energy implantation at the back-end of line, for the purpose of the passivation of dangling bonds at $SiO_2/Si$ interface. Experimental results are presented for the degradation of 3-nm-thick gate oxide ($SiO_2$) under both negative-bias temperature instability (NBTI) and hot-carrier injection (HCI) stresses using P and NMOSFETs. Annealing process was rather difficult to control the concentration of deuterium. Because when the concentration of deuterium is redundant in gate oxide excess traps are generated and degrades the performance, we found annealing process did not show the improved characteristics in device reliability, compared to conventional process. However, deuterium ion implantation at the back-end process was effective method for the fabrication of the deuterated gate oxide. Device parameter variations under the electrical stresses depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to conventional process. Our result suggests the novel method to incorporate deuterium in the MOS structure for the reliability.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.188-191
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• 2012

This paper introduces a new method regarding deuterium incorporation in the gate dielectric including deuterium implantation and post-annealing at the back-end-of-the process line. The control device and the deuterium furnace-annealed device were also prepared for comparison with the implanted device. It was observed that deuterium implantation at a light dose of $1{\times}10^{12}-1{\times}10^{14}/cm^2$ at 30 keV reduced hot-carrier injection (HCI) degradation and negative bias temperature instability (NBTI) within our device structure due to the reduction in oxide charge and interface trap. Deuterium implantation provides a possible solution to enhance the bulk and interface reliabilities of the gate oxide under the electrical stress.

• 천문학회보
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• 제36권2호
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• pp.105.1-105.1
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• 2011

We present the modeling results of deuterium fractionation of water ice, $H_2$, and the primary deuterium isotopologues of $H3^+$ in the physical conditions associated with the star and planet formation process. We calculated the deuterium chemistry for a range of gas temperatures (Tgas~10-30 K) and ortho/para ratio (opr ) of $H_2$ based on state-to-state reaction rates and explore the resulting fractionation including the formation of a water ice mantle coating grain surfaces. We find that the deuterium fractionation exhibits the expected temperature dependence of large enrichments at low gas temperature, but only for opr-H2<0.01. More significantly the inclusion of water ice formation leads to large D/H ratios in water ice (${\geq}10^{-2}$ at 10 K) but also alters the overall deuterium chemistry. For T<20 K the implantation of deuterium into ices lowers the overall abundance of HD which reduces the efficiency of deuterium fractionation at high density. Under these conditions HD will not be the primary deuterium reservoir in the cold dense interstellar medium and $H3^+$ will be the main charge carrier in the dense centers of pre-stellar cores and the protoplanetary disk midplane.

• 대한전자공학회논문지SD
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• 제45권7호
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• pp.23-31
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• 2008

중수소 처리된 3 nm 두께의 게이트 산화막을 갖는 MOSFET를 제조하여 정전압 스트레스 동안의 게이트 산화막의 열화를 조사하였다. 중수소 처리는 열처리와 이온 주입법을 사용하여 각각 이루어졌다. 열처리 공정을 통해서는 게이트 산화막내 중수소의 농도를 조절하기가 힘들었다. 게이트 산화막내에 존재하는 과잉 중수소 결합은 열화를 가속시키기 때문에, 열처리 공정을 행한 소자에서 신뢰성이 표준공정에 의한 소자에 비해 저하되고 있음을 확인하였다. 그러나 중수소 이온 주입 방법을 통해서는 소자의 신뢰성이 개선됨을 확인하였다. 스트레스에 의한 게이트 누설 전류 변화 및 구동 특성 변화는 게이트 산화막내의 중수소 농도와 관련이 있으며, 이러한 특성은 적절한 공정 조건을 갖는 이온 주입법을 통해 개선할 수 있었다. 특히, 큰 스트레스 전압의 PMOSFET에서 중수소의 효과가 뚜렷하게 나타났으며, 이는 "hot" 정공과 중수소의 반응과 관련이 있는 것으로 판단된다.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.749-752
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• 2014

New software was developed for the assignment of elemental formulae based on high-resolution mass spectra and subsequent hydrogen/deuterium exchange data. Entire peaks in high-resolution mass spectra were grouped by their Kendrick mass defect values, and the weighted RMS deviations between theoretical and experimental values were used to determine elemental formulae. After this initial assignment, formulae containing deuterium atoms were sorted in order to interpret hydrogen/deuterium exchange spectra. The software was successfully applied to hydrogen/deuterium exchange spectra of resins and aromatic fractions from heavy crude oil.

• 대한전자공학회논문지SD
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• 제47권4호
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• pp.13-19
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• 2010

중수소 결합이 존재하는 게이트 산화막을 갖는 MOSFET는 일반 MOSFET에 비해 신뢰성이 개선된다고 알려져 있다. 본 연구에서는 MOS 소자의 게이트 산화막내에 중수소를 분포시키기 위해 새로운 중수소 이온 주입법을 제안하였다. MOS 소자를 구성하는 층간 물질 및 중수소가 분포할 위치에 따라 중수소 이온 주입 에너지는 다양하게 변하게 된다. 이온 주입 후 발생할 수 있는 물질적 손상을 방지하기 위해 후속 열처리 공정이 수반된다. 제조된 일반 MOSFET를 사용하여 제안된 중수소이온 주입을 통해 게이트 산화막내 계면 및 bulk 결함이 감소함을 확인하였다. 그러나 이온 주입으로 인해 실리콘 기판의 불순물 농도가 변화할 수 있으므로 이온 주입 조건의 최적화가 필요하다. 중수소 이온 주입된 MOSFET의 CV 및 IV 특성 조사를 통해 이온 주입으로 인한 트랜지스터의 성능 변화는 발생하지 않았다.

• 한국재료학회지
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• 제31권8호
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• pp.465-470
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• 2021

Deuterium is a crucial clean energy source required for nuclear fusion and is a future resource needed in various industries and scientific fields. However, it is not easy to enrich deuterium because the proportion of deuterium in the hydrogen mixture is scarce, at approximately 0.016 %. Furthermore, the physical and chemical properties of the hydrogen mixture and deuterium are very similar. Therefore, the efficient separation of deuterium from hydrogen mixtures is often a significant challenge when using modern separation technologies. Recently, to effectively separate deuterium, studies utilizing the 'Kinetic Quantum Sieving Effect (KQS)' of porous materials are increasing. Therefore, in this review, two different strategies have been discussed for improving KQS efficiency for hydrogen isotope separation performance using nanoporous materials. One is the gating effect, which precisely controls the aperture locally by adjusting the temperature and pressure. The second is the breathing phenomenon, utilizing the volume change of the structure from closed system to open system. It has been reported that efficient hydrogen isotope separation is possible using these two methods, and each of these effects is described in detail in this review. In addition, a specific-isotope responsive system (e.g., 2nd breathing effect in MIL-53) has recently been discovered and is described here as well.

• 전자공학회논문지
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• 제52권11호
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• pp.29-35
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• 2015

다결정 실리콘으로 구성된 금속-반도체-금속(MSM) 구조의 광검출기의 광 응답 특성을 개선시키기 위해 중수소를 사용한 후속 공정을 행하였다. 다결정 실리콘 내 중수소 결합 형성 방법에 따른 광검출기의 특성 변화를 전기적 측정을 통해 비교하였다. 광검출기는 Schottky 접합 특성을 갖기 위해 Al/Ti 전극 금속이 사용되었다. 본 연구에서는 광 흡수 영역인 다결정 실리콘 내에 중수소 결합을 형성시켜 다결정 실리콘 내에 존재하는 결함을 효과적으로 passivation하여 결함밀도를 감소시키고자 한다. 후속 중수소 공정으로는 열처리 확산 방법과 이온 주입 방법을 각각 사용하였다. 중수소 열처리 확산 방법을 통해서 중수소는 다결정 실리콘의 표면 근처에 대부분 존재하였다. 다결정 실리콘의 표면은 광 흡수가 일어나는 부분이므로 중수소의 결합을 통해 광 응답 특성이 개선됨을 확인하였다. 중수소 이온 주입 방법을 통해서는 중수소를 다결정 실리콘 내부로 쉽게 분포시킬 수 있지만 다결정 실리콘 표면 근처에 결함을 만들 수 있어 광 응답 특성을 저하시키는 원인이 되었다.

• Nuclear Engineering and Technology
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• 제54권11호
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• pp.4231-4235
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• 2022

Considering the importance of deuterium in nuclear science including medical and industrial researches such as (BNCT) and nuclear reactors respectively, it is important to study various possible ways in addition to common methods for measuring its concentration. This study is an effort to measure deuterium concentration using PGNAA. The main idea is to calculate the area under 2.23 MeV gamma-rays photo peak resulting from neutron collision with Hydrogen atoms which are in mix with deuterium in samples. The study carried out by both simulation and experiment. Monte Carlo MCNPX2.6 code has been used for simulation and based on its acceptable results an experimental setup has been arranged. The coordination of results was in the range of R = 0.99 and R = 0.98 in simulation and experiment respectively. The accuracy of the study has been investigated by measuring the concentration of an unknown sample by both PGNAA and Fourier transform infrared spectroscopy (FT-IR) methods in which there were acceptable correlation between these two methods.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.117-118
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• 2008

High-pressure deuterium annealing process is proposed and investigated for enhanced electrical and reliability properties of 512Mb DDR2 DRAM without increase in process complexity. High pressure deuterium annealing (HPDA) introduced during post metal anneal (PMA) improves not only DRAM performance but also reliability characteristics of MOSFET. Compared with a control sample annealed in a conventional forming gas, additional annealing in a high pressure deuterium ambient at $400^{\circ}C$ for 30 min decreased G1DL current and junction leakage. The improvements can be explained by deuterium incorporation at $SiO_2$/Si substrate interface near isolation trench edge.