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A Study on the Effect of Integrative Art Therapy on Cognitive Function and Depression in Elderly People with Early Dementia (통합예술치료가 초기치매노인의 인지기능과 우울에 미치는 영향에 관한 연구)

  • Seung-Suk Paek;Dong-Yeol Sin
    • Industry Promotion Research
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    • v.9 no.1
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    • pp.149-157
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    • 2024
  • The purpose of this study is to objectively examine the effects of integrated art therapy on cognitive function and depression in the early dementia elderly, and to identify and discuss the process of change in the early dementia elderly through a comprehensive analysis through behavior change observation diary. As a research method, a mixed study was designed using in-depth analysis through qualitative studies as well as quantitative studies on the effect of integrated art therapy on cognitive function and depression in the elderly with early dementia. The quantitative study conducted a pre-post examination of 20 elderly people with early dementia using the day care center in P-gu, Suwon, and the qualitative study analyzed the behavioral change observation diary of 10 elderly people with early dementia. These findings show that first, integrated art therapy had a significant effect on the cognitive function of the elderly with early dementia (p<.001, t=-5.871). Second, integrated art therapy had a significant effect on the depression of the elderly with early dementia (p<.001, t=5.325). Third, the integrated art therapy program changed to a positive attitude before and after cognitive function and depression of the elderly with early dementia. By revealing the effect of integrated art therapy on cognitive function and depression of the elderly with early dementia through the results of this study, it is meaningful as basic data for research related to the elderly with early dementia as well as providing effective information on integrated art therapy programs related to the elderly with early dementia.

Characteristics of Water Temperature and Salinity in the Bottol Bada, Yeosu during Summer in 2010 (2010년 하계 보돌바다의 수온과 염분 특성)

  • Cho, Eun-Seob
    • Journal of the Korean Society of Marine Environment & Safety
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    • v.17 no.4
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    • pp.301-306
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    • 2011
  • This study was determined to analysis the characteristics of water mass in the Bottol Bada, Yeosu in August, 2010 based on the data from the distribution of water temperature and salinity. Sampling was carried out a total of three times (i.e. July 29, August 13, and August 30, 2010) and performed at three stations. Observation was done during the period of time 10:00-15:00, indicating the decreasing tidal height and turn of tide. In July 29, thermocline was found at 4 m in St. 1, but the stratification did not observe in August 13 and August 30. The remarkable water temperature between surface and bottom was found in St. 2 and St. 3, whereas St. 1 did not find. A particular finding during this study showed a cold water mass at bottom layer from St. 2 and St. 3, which was first occurred in July 29 and persisted in August 30 without any of destruction. Water temperature had a remarkable fluctuation between surface and bottom, whereas salinity had a unique in St. 1. St. 2 and St. 3 showed the increasing salinity according to water depth in August 13 and August 30. Transparency had considerable fluctuations in St. 1 and St. 3 depending to sampling date, but St. 2 did not fluctuate. Consequently, the Bottol Bada had a significantly different water mass between inner and outer waters. Furthermore, strong irradiance and weak wind play an important role in developing the stratification between surface and bottom, in particular the introduction of offshore waters contribute to highly developing the stratification in the Bottol Bada during the period of August in 2010.

A GRAVITY STUDY OF THE TRIASSIC VALLEY IN SOUTHERN CONNECTICUT

  • Chang, Chung Chin
    • Economic and Environmental Geology
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    • v.2 no.2
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    • pp.1-35
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    • 1969
  • The structure and geologic history of the Triassic basin in southern Connecticut have been interpreted by using gravimetric data. A gravity survey of 800 gravity stations was made by the U.S. Geological Survey in the southern Connecticut area. The resulting data were reduced by the Bouguer method and then plotted and contoured along with the generalized geology. Residual gravity maps were prepared by different methods to obtain the most plausible agreement with the known geology of the area. Seven gravity profiles across the basin are presented to show the distribution of the Triassic deposits that could produce the measured anomalies. It is concluded that the basin was formed by successive step faulting in the late Triassic period and that the sediments accumulated progressively in this basin. The deepest portion of the basin is located in the middle of the present Triassic belt and reaches a depth of about 2 miles below the surface. The data also appear to indicate the possible source areas for the basalt which at present forms the lava flows, sills, and dikes exposed in the Cheshire and Gaillard regions. The information concerning the tectonic history of the Connecticut Triassic Valley aids considerably in establishing the geologic history of the Appalachians in late Triassic time.

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Exploring Ways to Improve the First Major Area of the Examination for Appointing Secondary Science Teachers with the Change of Educational Environment (교육환경 변화에 따른 중등 과학교사 임용시험의 1차 전공영역에 대한 개선 방안 탐색)

  • Kwak, Youngsun
    • Journal of Science Education
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    • v.44 no.1
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    • pp.122-132
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    • 2020
  • The purpose of this study is to examine the teacher expertise to be evaluated in the secondary science teacher employment test (TET, hereafter) in order to respond to changes in educational environments including the transition to competency-based curriculum, and ways to improve the first exam in major areas in the current TET. For this purpose, Delphi surveys and in-depth interviews were conducted with 18 professors of science education who have experience in the TET. According to the research results, teacher expertise such as subject teaching, student understanding, intelligence information utilization, community competencies, and so on were suggested. Ways to improve science content exam in the TET include securing fairness and validity by increasing the number of questions, strengthening the connection with the secondary school curriculum, updating assessment areas for certificate subjects periodically, etc. Ways to improve science education exam in the TET include research and development on the types of science education questions, introducing essay test to science education exam, development of a standardized curriculum on science education, etc. Based on the research results, the necessity of revising the curriculum for teacher training colleges, differentiating curriculum between teachers' colleges and natural science colleges, and reforming the teacher training system by introducing graduate school of education were suggested.

A Study on the Activation Plan of the Industry Security Career Education through the Middle School Free Semester (중학교 자유학기제도를 통한 산업보안 진로교육 활성화 방안에 관한 연구)

  • Shin, Min-ji;Lee, Chang-Moo
    • Korean Security Journal
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    • no.59
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    • pp.133-159
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    • 2019
  • The free semester system, introduced on a trial basis in 2013, has been fully implemented in all middle schools since 2016. The free semester system for middle school students is divided into subject activities and free semester activities with the purpose of students' dream and career exploration. While the activities of various vocational groups linked to subjects during the free semester are discussed, studies on the industrial security career education in middle schools are hard to find. In addition, the career sites that provide diverse information on career path for teachers, students and parents with support from the Ministry of Education have not established any program regarding industrial security. This study aims to look at the status of career education by the analysis of keywords for industrial security in the career experience network currently operated by the Ministry of Education and in-depth interview with career education teachers, students and parents, and industrial security experts. Based on such analysis, this study attempts to figure out a comprehensive understanding of the free semester system and to explore strategies for promoting industrial security education. The results of this study found that the activation plan for industrial security education requires the industry security education through career network, development of industrial security education program, training and placement of professional industrial security lecturer, and establishment of support systems for experience in industrial security.

70nm NMOSFET Fabrication with Ultra-shallow $n^{+}-{p}$ Junctions Using Low Energy $As_{2}^{+}$ Implantations (낮은 에너지의 $As_{2}^{+}$ 이온 주입을 이용한 얕은 $n^{+}-{p}$ 접합을 가진 70nm NMOSFET의 제작)

  • Choe, Byeong-Yong;Seong, Seok-Gang;Lee, Jong-Deok;Park, Byeong-Guk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.2
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    • pp.95-102
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    • 2001
  • Nano-scale gate length MOSFET devices require extremely shallow source/drain eftension region with junction depth of 20∼30nm. In this work, 20nm $n^{+}$-p junctions that are realized by using this $As_{2}^{+}$ low energy ($\leq$10keV) implantation show the lower sheet resistance of the $1.0k\Omega$/$\square$ after rapid thermal annealing process. The $As_{2}^{+}$ implantation and RTA process make it possible to fabricate the nano-scale NMOSFET of gate length of 70nm. $As_{2}^{+}$ 5 keV NMOSFET shows a small threshold voltage roll-off of 60mV and a DIBL effect of 87.2mV at 100nm gate length devices. The electrical characteristics of the fabricated devices with the heavily doped and abrupt $n^{+}$-p junctions ($N_{D}$$10^{20}$$cm^{-3}$, $X_{j}$$\leq$20nm) suggest the feasibility of the nano-scale NMOSFET device fabrication using the $As_{2}^{+}$ low energy ion implantation.

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The Early Write Back Scheme For Write-Back Cache (라이트 백 캐쉬를 위한 빠른 라이트 백 기법)

  • Chung, Young-Jin;Lee, Kil-Whan;Lee, Yong-Surk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.11
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    • pp.101-109
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    • 2009
  • Generally, depth cache and pixel cache of 3D graphics are designed by using write-back scheme for efficient use of memory bandwidth. Also, there are write after read operations of same address or only write operations are occurred frequently in 3D graphics cache. If a cache miss is detected, an access to the external memory for write back operation and another access to the memory for handling the cache miss are operated simultaneously. So on frequent cache miss situations, as the memory access bandwidth limited, the access time of the external memory will be increased due to memory bottleneck problem. As a result, the total performance of the processor or the IP will be decreased, also the problem will increase peak power consumption. So in this paper, we proposed a novel early write back cache architecture so as to solve the problems issued above. The proposed architecture controls the point when to access the external memory as to copy the valid data block. And this architecture can improve the cache performance with same hit ratio and same capacity cache. As a result, the proposed architecture can solve the memory bottleneck problem by preventing intensive memory accesses. We have evaluated the new proposed architecture on 3D graphics z cache and pixel cache on a SoC environment where ARM11, 3D graphic accelerator and various IPs are embedded. The simulation results indicated that there were maximum 75% of performance increase when using various simulation vectors.

Study on Electrical Characteristics of Ideal Double-Gate Bulk FinFETs (이상적인 이중-게이트 벌크 FinFET의 전기적 특성고찰)

  • Choi, Byung-Kil;Han, Kyoung-Rok;Park, Ki-Heung;Kim, Young-Min;Lee, Jong-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.11 s.353
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    • pp.1-7
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    • 2006
  • 3-dimensional(3-D) simulations of ideal double-gate bulk FinFET were performed extensively and the electrical characteristics. were analyzed. In 3-D device simulation, we changed gate length($L_g$), height($H_g$), and channel doping concentration($N_b$) to see the behaviors of the threshold voltage($V_{th}$), DIBL(drain induced barrier lowering), and SS(subthreshold swing) with source/drain junction depth($X_{jSDE}$). When the $H_g$ is changed from 30 nm to 45nm, the variation gives a little change in $V_{th}$(less than 20 mV). The DIBL and SS were degraded rapidly as the $X_{jSDE}$ is deeper than $H_g$ at low fin body doping($1{\times}10^{16}cm^{-3}{\sim}1{\times}10^{17}cm^{-3}$). By adopting local doping at ${\sim}10nm$ under the $H_g$, the degradation could be suppressed significantly. The local doping also alleviated $V_{th}$ lowering by the shallower $X_{jSDE}\;than\;H_g$ at low fin body doping.

Seawater N/P ratio of the East Sea (동해 해수의 질소:인의 비)

  • LEE, TONGSUP;RHO, TAE-KEUN
    • The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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    • v.20 no.4
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    • pp.199-205
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    • 2015
  • Nitrogen and phosphorus are the limiting elements for growth of phytoplankton, which is a major primary producer of marine ecosystem. Incidentally the stoichiometry of N/P of ocean waters, measured by the (nitrate + nitrite)/phosphate ratio converges to a constant of 16. This characteristic ratio has been used widely for the understanding the ecosystem dynamics and biogeochemical cycles in the ocean. In the East Sea, several key papers were issued in recent years regarding the climate change and its impact on ecosystem dynamic and biogeochemical cycles using N/P ratio because the East Sea is a "miniature ocean" having her own meridional overturning circulation with the appropriate responding time and excellent accessibility. However, cited N/P values are different by authors that we tried to propose a single representative value by reanalyzing the historical nutrient data. We present N/P of the East Sea as $12.7{\pm}0.1$ for the year 2000. The ratio reveals a remarkable consistency for waters exceeding 300m depth (below the seasonal thermocline). We recommend to use this value in the future studies and hope to minimize confusion for understanding ecosystem response and biogeochemical cycles in relation to future climate change until new N/P value is established from future studies.

The Improved Characteristics of Wet Anisotropic Etching of Si with Megasonic Wave (Megasonic wave를 이용한 실리콘 이방성 습식 식각의 특성 개선)

  • Che Woo-Seong;Suk Chang-Gil
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.4 s.33
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    • pp.81-86
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    • 2004
  • A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6 inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as an etch uniformity and surface roughness. The etching uniformity on the whole wafer with and without megasonic irradiation were less than ${\pm}1\%$ and more than $20\%$, respectively. The initial root-mean-square roughness($R_{rms}$) of single crystal silicon is 0.23 nm. It has been reported that the roughnesses with magnetic stirring and ultrasonic agitation were 566 nm and 66 nm, respectively. Comparing with the results, etching with megasonic irradiation achieved the Rrms of 1.7 nm on the surface after the $37{\mu}m$ of etching depth. Wet etching of silicon with megasonic irradiation can maintain nearly the original surface roughness after etching process. The results have verified that the megasonic irradiation is an effective way to improve the etching characteristics such as etch uniformity and surface roughness.

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