• Journal of the Korean Society for Heat Treatment
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• v.24 no.4
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• pp.199-202
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• 2011

Ga doped ZnO thin films were deposited with RF magnetron sputtering on glass substrate without intentional substrate heating and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in a vacuum of $1{\times}10^{-3}$ Torr and the vacuum annealing temperatures were 150 and $300^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $300^{\circ}C$ have the highest optoelectrical performance in this study.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.756-759
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1859-1862
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• 2004

Europium doped yttrium vanadate ($YVO_4$:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of ($YVO_4$:Eu films at post annealing temperature in the range of 550 $^{\circ}C$-1150 $^{\circ}C$ indicating that films were preferentially (200) oriented at post annealing temperature above 950 $^{\circ}C.$ Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from $^5D_1$ level of $Eu^{3+}$ show the great concentration dependency, which can be used as a good parameter to control the composition of ($YVO_4$:Eu thin film.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.180-182
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• 2002

Copper thin films are prepared by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between $120^{\circ}C$ and $300^{\circ}C$. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the $5\times$10^{-6}$ Torr vacuum condition, and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.2 $\mu$$\Omega$.cm was obtained for the sample deposited at the substrate temperature of $180^{\circ}C$ after vacuum annealed at $300^{\circ}C$. The resistivity variations of the films was not exactly matched with the size of the nato-structures of the copper grains, but more depended on the deposition temperature of the copper films.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.198-202
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• 2002

$HfO_2$films were grown on Si substrate in the temperature range $250~550^{\circ}C$ using metal organic chemical vapor deposition (MOCVD) technique for a gate dielectric. Hafnium tart-butoxide and Oxygen gas were used as precursors and N2 was used as carrier gas. Impurity distribution and film structure(including interfacial layer) were studied at the deposition temperature range between 25$0^{\circ}C$ and $550^{\circ}C$. The growth rate and impurty distribution decreased with increasing temperature. The electrical properties of $HfO_2$were investigated with C-V, 1-V method and showed it has a good properties as a gate dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.189-193
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• 1997

(S $r_{0.85}$/C $a_{0.15}$)Ti $O_3$(SCT) thin films at various deposition temperature and rf power were grown by rf magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/ $SiO_2$/Si). The crystallinity of the films increases with increasing deposition temperature. SCT thin film is depend on the surface morphology and crystallinity of Pt films for bottom electrode. Dielectric constant of (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$ thin films deposited on Si wafer substrate are larger with the increase of deposition temperature and gain size.in size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.107-108
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• 2007

In order to investigate the electrical properties of Hf-silicate as a function of annealing temperature, Hf-silicate deposited by atomic layer deposition (ALD) was studied. After Hf-silicate film deposition, annealing was proceeded at $500^{\circ}C\;and\;700^{\circ}C$. The hysteresis of C-V curves and trapping charge densities were decreased after annealing process. As annealing temperature became higher from $500^{\circ}C\;to\;700^{\circ}C$, the capacitance equivalent thickness (CET) was increased from 1.66 nm to 1.76 nm and the leakage current at -1 V was decreased from $1.70{\times}10^{-4}\;to\;5.68{\times}10^{-5}\;A/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.337-338
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• 2006

The 200 nm thick-NiCr films grew on $SiO_2$/Si substrates at various deposition temperatures by a dc magnetron co-sputtering technique were characterized for the variation of film texture. The resistivity of the films decreases with increasing deposition temperature and temperature coefficient of electrical resistance (TCR) varies from negative value to a positive one with increasing deposition temperature. The NiCr films deposited at $300^{\circ}C$ exhibit 4 ppm/K being near zero TCR, resulting in TCR suitable for $\pi$-type attenuator applications.