• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.1-20
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• 1998

Processing of thin films by chemical vapor deposition (CVD) is accompanied by chemical reactions, in which the rigorous kinetic analysis is difficult to achieve. In these conditions, thermodynamic calculation leads to better understanding of the CVD process and helps to optimise the experimental parameters to obtain a desired product. A CVD phase diagram has been used as guide lines for the process. By determining the effect of each process variable on the driving force for deposition, the thermodynamic limit for the substrate temperature that diamond can deposit is calculated in the C-H system by assuming that the limit is defined by the CVD diamond phase diagram. The addition of iso-supersaturation ratio lines to the CVD phase diagram in the Si-Cl-H system provides additional information about the effects of CVD process variables.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.312-313
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• 2006

The primary aim pursued by the preparation of separation membrane is the preparation of the membrane thin as well as with no defect. The field-flow fractionation deposition is a new molding technology which can overcome the traditional disadvantages such as multi-preparation to the preparation of great area of separation membrane with no defect. Therefor the mainly ingredients which influence the appearance and performance of titanium membrane layer are investigated by scanning electricity mirror (SEM) as well as porous material testing instrument: powder performance prepared and confected; selection of supporting body; sintering system such as temperature and time. It is shown that the membrane thickness can be controlled at $50{\mu}m$ or so; the filtration precision mainly rests with powder performance and selection of supporting body and little sintering system

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.116-120
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• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• 한국표면공학회지
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• 제56권6호
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• pp.341-352
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• 2023

This paper reviews the potentials of a rotary chemical vapor deposition (RCVD) process for nanomaterial synthesis and coating on powder-based materials. The rotary reactor offers a significant improvement over traditional CVD methods having horizontal and fixed reaction chambers. The RCVD system yields enhanced productivity and surface coating uniformity of nanoparticles applied in various purposes, such as efficient heat dissipation, surface hardness enhancement, and enhanced energy storage performances. The effectiveness of the RCVD system would open up new possibilities in various applications because uniform coating on powder-based materials with massive productivity is inevitable to develop multi-functional materials with high reliability.

• 한국결정성장학회지
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• 제9권1호
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• pp.80-83
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• 1999

화학증착에 의한 박막 제조에서는 화학반응을 수반되어 엄밀한 속도론적 분석이 어렵다. 이러한 경우는 열역 학적인 분석이 화학증착공정을 이해하는데 더 유용하고 원하는 박막을 제조하기 위한 최적공정조건을 결정함에 있어서 도 도움이 된다. 이러한 이유로 화학증착 상태도가 사용되어 왔다. 본 연구에서는 C-H 계와 Si-Cl-H 계의 열역학적 분 석을 통하여 열역학이 어떻게 화학증착 공정에 응용될 수 있는가를 보여주려고 하였다. 각 공정변수가 증착 구동력에 미 치는 효과를 결정함으로서, C-H 계에서 다이아몬드가 증착될 수 있는 열역학적인 한계를 계산하였다. Si-Cl-H 계에서는 동 과포화도 곡선을 계산함으로써 화학증착 공정변수의 효과에 대한 부가적인 정보를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1025-1027
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• 2009

Novel low temperature deposition process for nano-crystalline Si thin film is developed with the hyper-thermal neutral beam (HNB) technology. By our HNB assisted CVD system, the reactive particles can induce crystalline phase in Si thin films and effectively combine with heating effect on substrate. At low deposition temperature under $80^{\circ}C$, the HNB with proper incident energy controlled by the reflector bias can effectively enhance the nano-crystalline formation in Si thin film without any additional process. The electrical properties of Si thin films can be varied from a-Si to nc-Si according to change of HNB energy and substrate temperature. Characterization of these thin films with conductivity reveal that crystalline of Si thin film can increase by assist of HNB with appropriate energy during low temperature deposition. And low temperature prcoessed nc-Si TFT performance has on-off ratio as order 5.

• 한국정밀공학회지
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• 제22권12호
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• pp.170-174
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• 2005

A numerical system to extract effective elastic properties of polycrystalline thin-films for MEMS devices is developed. In this system, the statistical model based on lattice system is used for modeling the microstructure evolution simulation and the key kinetics parameters of given micrograph, grain distributions and deposition process can be extracted by inverse method proposed in the system. In this work, effects of kinetics parameters on the extraction of effective elastic properties of polycrystalline thin-films are studied by using statistical method. Effects of the fraction of the potential site($f_p$) among the parameters for deposition process of microstructure on the extraction of effective elastic properties of polycrystalline thin-films are investigated. For this research, polysilicon is applied to this system as the polycrystalline thin-films.

• 전자공학회논문지SC
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• 제46권3호
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• pp.1-7
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• 2009

본 논문에서는 컬러 모노 카메라를 이용한 자동 전착 로봇 시스템 (Automatic Electrophoretic Deposition Robot System)을 제안한다. 전착 로봇 시스템은 실제 전착 작업 수행을 위한 2자유도 직교 로봇과 로봇 자동 제어를 위한 컬러 모노 카메라로 구성되어 있다. 직교 로봇은 전착 작업 특성상 10mm/s까지 저속 구동이 가능하도록 스크류 (Screw)를 사용하여 감속 구동하였다. 컬러 모노 카메라는 로봇과 비커에 부착된 컬러 마커를 인식하여 각각의 위치를 측정하고 측정된 위치를 기반으로 로봇을 제어한다. 또한, 카메라에 의해 비커에 부착된 컬러 마커의 조합을 인식하여 다양한 작업 변수를 갖는 전착 작업을 판단한다. 제안된 자동 전착 로봇 시스템의 효율성을 입증하기 위해 전착 작업 실험을 수행하였고 그 결과를 제시하였다.

• 조명전기설비학회논문지
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• 제23권7호
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• pp.8-13
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• 2009

Plasma enhanced chemical vapor deposition (PECVD) is commonly used for Carbon nanotubes (CNTs) fabrication, and the process can easily be applied to industrial production lines. In this works, we developed novel magnetized radio frequency PECVD system for one line process of CNTs fabrication for charge storable electrode application. The system incorporates aspects of physical and chemical vapor deposition using capacitive coupled RF plasma and magnetic confinement coils. Using this magnetized RF-PECVD system, we firstly deposited Fe layer (about 200[nm]) on Si substrate by sputter method at the temperature of 300[$^{\circ}$] and hence prepared CNTs on the Fe catalyst layer and investigated fundamental properties by scanning electron microscopy (SEM) and Raman spectroscopy (RS). High-density, aligned CNTs can be grown on Fe/Si substrates at the temperature of 600[$^{\circ}$] or less.