• 한국전기전자재료학회논문지
• /
• 제16권2호
• /
• pp.157-162
• /
• 2003

For fabricating high T$\sub$c/ superconducting deposition film, novel electrophoretic deposition (EPD) technique applied to deposit surface charged particles on metal substrate with only d.c field has been studied. However, the electric properties of superconducting film could not be improved easily by this way, because the particles of EPD film were usually deposited randomly on metal substrate without any directional orientation affected to its critical current density. For the purpose of obtaining partcle orientation on the EPD films, the new method modified by a.c. assisted field to the conventional electrophoresis system was investigated to improve the particle deposition density and to increase the contacting area among the particles with highly oriented particle deposition of BSCCO superconducting film.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
• /
• pp.127-142
• /
• 2000

The charged cluster model states that chemical vapor deposition (CVD) begins with gas phase nucleation of charged clusters followed by cluster deposition on a substrate surface to form a thin film. A two-chambered CVD system, separated by a 1-mm orifice, was used to study gold deposition by thermal evaporation in order to determine if the CCM applies in this case. At a filament temperature of 1523 and 1773 K, the presence of nano-meter sized gold clusters was found to be positive and the cluster size and size distribution increased with increasing temperature. Small clusters were found to be amorphous and they combined with clusters already deposited on a substrate surface to form larger amorphous clusters on the surface. This work revealed that gold thin films deposited on a mica surface are the result of the sticking of 4-10 nm clusters. The topography of these films was similar to those reported previously under similar conditions.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
• /
• pp.41-45
• /
• 2006

The study on laser-ablation plasmas has been strongly interested in fundamental aspects of laser-solid interaction and consequent plasma generation. In particular, this plasma has been widely used for the deposition of thin solid films and applied to the semiconductors and insulators. In this paper, we developed and discussed the generation of carbon ablation plasmas emitted by laser radiation on a solid target, graphite. The progress of carbon plasmas by laser-ablation was simulated using Monte-Carlo particle model under the pressures of vacuum, 1 Pa, 10 Pa and 66 Pa. At the results, carbon particles with low energy were deposited on the substrate as the pressure becomes higher. However, there was no difference of deposition distributions of carbon particles on the substrate regardless of the pressure.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.253-253
• /
• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국전기전자재료학회논문지
• /
• 제22권5호
• /
• pp.425-430
• /
• 2009

$ZrO_2$ film was deposited by facing target sputtering (FTS) system on polyethylene naphthalate (PEN) substrate as a gas barrier layer for flexible organic light emitting devices (FOLEDs), In order to control the heat of the FTS system caused by the ion bombardment in the cathode compared with the conventional sputtering system, the process characteristics of the FTS apparatus are investigated under various sputtering conditions such as the distance between two targets ($d_{TT}$), the distance between the target and the substrate ($d_{TS}$), and the deposition time. The $ZrO_2$ film by the FTS system can reduce the damage on the films because the ion bombardment with high-energy particles like gamma-electrons, Moreover, the $ZrO_2$ film with optimized condition ($d_{TT}$=140 mm) as a function of the distance from center to edge showed a very uniform thickness below 5 % for a deposition time of 3 hours, which can improve the interface property between the anode and the plastics substrate for flexible displays, It is concluded that the $ZrO_2$ film prepared by the FTS system can be applied as a gas barrier layer or an interlayer between the anode and the plastic substrate with good properties of an uniform thickness and a low deposition-temperature.

• 한국생산제조학회지
• /
• 제23권4호
• /
• pp.385-391
• /
• 2014

A control system for ultrasonic spray pyrolysis deposition was developed that can coat a large size glass panel with a transparent conductive oxide. It consists of several ultrasonic atomizer devices to cover a large area and a host computer for individually controlling the devices. The sub-controller in an ultrasonic atomizer device can adjust the flow rate of the atomized conductive oxide gas by setting the flow rate of the solution and regulating the level of the solution in the tank. To construct a feedback control loop for level regulation, a level sensor that utilized an infrared distance sensor and an electric circuit for adjusting the ultrasonic oscillator were developed. The host program was also developed, which can monitor and control the sub-controllers. A proportional-integral controller was developed for a simplified model, and its operation was verified through an experiment.

• 대한기계학회논문집A
• /
• 제24권9호
• /
• pp.2235-2245
• /
• 2000

The necessity of using rapid prototyping(RP) for short-run manufacturing is continuously driving a development of a cost-effective technique that will produce completely-finished quality parts in a very short time. To meet these demands, the improvements in production speed, accuracy, materials, aid cost are crucial. Thus, a new hybrid-RP system performing both deposition and machining in a station is proposed. For the new hybrid RP process to maintain the same degree of process automation as in currently available processes like SLA or FDNI, a sophisticated process planning system is developed. In the process planner, CAD models(STEP AP203) are partitioned into 3D manufacturable volumes called 'Ueposition feature segment"(DFS) after machining features called "machining feature segmenf'(MFS) are extracted from the initial CAD model. Once MFS and DFS are identified, the process planner arranges them into a chain of processes and automatically generates machining information for each DFS and MFS. The goal of this paper is to present a framework for a process planning system for hybrid RP processes and to outline the geometric algorithms involved in developing such an environment.

• 한국전기전자재료학회논문지
• /
• 제19권6호
• /
• pp.538-546
• /
• 2006

We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of $10^{11}$ electrons/$cm^3$ generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent $SiN_{x}$ passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below $50\;^{\circ}C$ without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the $SiN_x$ passivation layer without conventional lithography processes. Even at low substrate temperature, a $SiN_x$ passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of $5{\times}10^{-3}g/m^2/day$ and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2009년도 추계학술대회 논문집
• /
• pp.391-392
• /
• 2009

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
• /
• pp.124-124
• /
• 1994