• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.97-102
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• 1993

According as the high integrity of the semi conductor devices is definited required, the concern on the multi-layered wiring, and three-dimensional devices is growing these days. Therefore, plasma-enhanced chemical vapored deposition(PECVD) enables low-teperature process and is widely used, but it causes the instability of the devices due to a lot of impurities within the film. The PECVD oxynitride was formed by changing the gas ratio of (N$_2$O) to (N$_2$+NH$_3$). It's contained a small portion of hydrogen, had higher refrctive index and capacitance than oxide, and showed the capacitance increasement and the chemical stabi1ity. This is caused by nitrogen distribution increase of the interface lather than within the film.

• 전자공학회논문지A
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• 제30A권8호
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• pp.34-41
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• 1993

Effect of high temperature annealing conditions on Ta$_{2}O_{5}$ thin films was investigated. Ta$_{2}O_{5}$ thin films were deposited on P-type silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using tantalum ethylate. Ta(C$_{2}H_{5}O)_{5}$, and nitrous oxide. N$_{2}$O. The microstructure changed from amorphous to polycrystalline above 700.deg. C annealing temperature. The refractive index, dielectric onstant and leakage current of the film increased as annealing temperature increased. However, annealing in oxygen ambient reduced leakage currents and dielectric constant due to the formation of interfacial SiO$_{2}$ layer. By optimizing annealing temperature and ambient, leakage current lower than 10$^{-8}$ A/cm$^{2}$ and maximum capacitance of 9 fF/${\mu}m^{2}$ could be obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.484-485
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• 2003

We report on the optimization of the fabrication process of hybrid sol-gel thin film deposition to produce low cost $1 {\times} 16$ splitters for optical communications. We learn that sol-gel film thickness is dependent upon the spinning speeds and viscosity of the sol-gel solutions and refractive index upon the dopant concentrations of Al and Zr in the sol solutions. We could find the optimized physical conditions to achieve the desired thickness of core and cladding layers. We will further carry out the fabrication and measurements of insertion loss, polarization dependent loss (PDL), etc. for the performance of fabricated splitter devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.386-389
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• 1989

Phosphorus nitride films on InP surface were grown by a Photo-CVD (chemical vapor deposition) technique over 100-250 $^{\circ}C$ range of substrate temperature, which is based on direct photolysis of $PCl_3/H_2$ and $NH_3$ gas mixtures by 185nm ultraviolet light from a low pressure mercury lamp. The film growth rate ed the refractive index(n) were shown about 700-800 ${\AA}/hr$ and 1.7-1.8, respectively. Composition ratio and interface properties were analyzed by AES(Auger Electron Spectroscopy) and XPS (X-ray Photoelectron Spectorscopy) technique.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.926-929
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• 1999

In this paper, we have studied the role of sources gases, SiH$_4$, NH$_3$ and $N_2$, to produce Si-N and Si-H bond in PECVD. The correlations of a deposition rate, a refractive index and a permitivity were investigated with the NH$_3$ flow rate of 6, 9 and 12 sccm, and SiH$_4$ flow rate of 20, 30 and 40 sccm, and substrate temperature of 150, 250 and 35$0^{\circ}C$. But the $N_2$ flow rate and chamber pressure were fixed at 55 sccm and 700mTorr. And then MIM capacitors were fabricated and tested for MMIC applications.

• KEPCO Journal on Electric Power and Energy
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• 제3권2호
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• pp.127-131
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• 2017

The present paper describes the slagging field data obtained with the one-dimensional process model for the 500 MW tangentially coal fired boiler in Korea. To obtain slagging field data in terms of thermal resistances [$m^2{\cdot}^{\circ}C/kW$], a number of plant data were collected and analyzed with the one-dimensional modelling software at 500 MW full load. The slagging field data for the primary superheater were obtained for six coal blends, and compared with two TMA (Thermo-Mechanical analyzer) slagging indices and the numerical slagging index, along with the conventional slagging indices which were modified with the ash loading. The advanced two TMA indices for six blended coals give a good slagging tendency when comparing them with the slagging field data, while the modified conventional slagging indices give a relatively poor agreement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1428-1430
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• 1996

Thin Silicon oxynitride(SiON) films have been chemically deposited using 193nm ArF Excimer Laser CVD, with $Si_{2}H_{8}$, $N_{2}O$, and $NH_3$ as the reactive gases and $N_2$ as the carrier gas. Experimental results show that deposition rate and refractive index have a strong dependence on substrate temperature, chamber pressure, gas ratio, laser power and laser beam height. Electrical characterization of oxynitride films demonstrates that for $NH_{3}/N_{2}O$ flow ratios ranging from 0.25 to 1, the leakage currents, the interface trap density and the capacitances (dielect ric constant) increase and the dielectric breakdown fields decrease

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1639-1641
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• 1996

Polyirnide thin films were fabricated an using vapor deposition polymerization apparatus, and their FT-IR and TGA characteristics were investigated. The peaks of $720cm^{-1}$ and $1380cm^{-1}$ show C=O stretch mode and C-N stretch mode, and that of the cured polyimide at $300^{\circ}C$ were saturated. TGI(Thormogravi metric index) was showed at $459^{\circ}C$ from reaserch of thermal resistivity characteristics by TGA.

• 한국진공학회지
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• 제6권1호
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• pp.44-49
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• 1997

반응성 RF 스퍼터링 장치에 반응성 질소와 작업가스 아르곤을 동시에 주입하면서 Al을 스퍼터링하여 AIN박막을 형성하였다. polycarbonate기판이나 이 디스크 표면 위의 micron크기의 pregroove형태의 손상이 일어나지 않을 정도의 저온의 저온을 유지키 위하여 플라즈마(plasma) 자체 온도($100^{\circ}C$이하)로 가열하면서 silicon과 glass기판 위에 AIN박막을 증착시켰다. 여러 증착변수 변화에 따른 박막의 결정성, 단면형상 및 굴절율 변화 등을 분석 하였다.

• Applied Science and Convergence Technology
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• 제24권2호
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• pp.41-46
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• 2015

Transparent conductive oxides (TCOs) are essential material in optoelectronics such as solar cells, touch screens and light emitting diodes. Particularly TCOs are attractive material for infrared cut off film due to their high transparency in the visible wavelength range and high infrared reflectivity. Among the TCO, Indium tin oxide has been widely used because of the high electrical conductivity and transparency in the visible wavelength region. But ITO has several limitations; expensive and low environmental stability. On the other hands, fluorine doped tin oxide (FTO) is well known for low cost, weather ability and stable in acidic and hydrogen. In this study, two different magnetron sputtering techniques with RF and DC modes at room temperature deposition of FTO thin film was conducted. The change of oxygen content is influence on the topography, transmittance and refractive index.