• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.1-351.1
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• 2014

In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.124-131
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• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.309-312
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• 2002

Triode field emitters with planar-carbon-nanopaticle (CNP) cathodes were successfully fabricated using the conventional photolithography and the hotfilament chemical vapor deposition. Electron emission from a CNP triode emitter with a 12-${\mu}m$-diameter gate hole started at the gate voltage of 45 V, and the anode current reached the level of ${\sim}120$ nA at the gate voltage of 60 V, respectively. For the quantitative analysis of the Fowler-Nordheim (F-N) type emission from a CNP triode emitter, we carried out 2dimensional numerical calculation of electrostatic potential using the finite element method. As it turned out, a radial variation of electric field was very important to account for the emission from a planar emitting layer. By assuming the graphitic work function of 5 eV for CNPs, we were able to extract a consistent set of F-N parameters, together with the radial position of emitting sites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.362-363
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• 2005

The objectives of this paper are to achieve good planarization of the deposited film and to improve deposition efficiency of multi-layer structures by using surface-micromaching process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages and disadvantages of CMP for MEMS structures are observed respectively by using the test patterns with structures larger than 1 um line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of slurries: ILD1300 and Nalco2371. And then, the experiments were conducted based on the pretest.

• Tunnel and Underground Space
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• v.13 no.2
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• pp.138-152
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• 2003

Three-dimensional computer modeling using FLAC3D had been carried out fur evaluating the thermal-mechanical stability of a high-level radioactive waste repository excavated in several hundred deep location. For effective modeling, a FISH program was made and the geological conditions and rock properties achieved from the drilling sites in Kosung and Yusung areas were used. Sensitivity analysis fer the stresses and temperatures from the modeling designed utilizing fractional factorial design was carried out. From the sensitivity analysis, the important design parameters and their interactions could be determined. From this study, it was found that deposition hole spacing is the most important parameter on the thermal and mechanical stability. The second and third most important parameters were disposal tunnel and buffer thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.276-276
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• 2012

The interface morphology of organic active layers is known to play a crucial role in the performance of organic photovoltaic (OPV) cells. Especially, a controlled nanostructure with a large contact area between electron donor (D) and acceptor (A) layers is necessary to improve the power conversion efficiency (PCE) of the cells since the short exciton diffusion lengths in organic semiconductors limit the charge (hole and electron) separation before excitons recombination. In this work, we developed simple solvent treating methods to fabricate a nanostructured DA interface and applied them to enhance the PCE of ZnPc/C60 based small molecule OPV cells. Interestingly, it was observed that the solvent treatment on the donor layer prior to the deposition of the acceptor layer resulted in a significant decrease in PCE, which was due to an existence of undesirable voids at the DA interface. Instead, the solvent vapor treatment after the DA bilayer formation led to densely packed and well dispersed DA contacts. Consequently, 3-fold enhancement of PCE as compared to the untreated bilayer cell was accomplished.

• Journal of Magnetics
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• v.12 no.4
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• pp.144-148
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• 2007

We report on the observation of p-type conductivity and ferromagnetism in diluted magnetic semiconductor $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films grown on $SiO_2/Si$ substrates by pulsed laser deposition. The p-type conduction with hole concentration over $10^{18}cm^{-3}$ is obtained by codoping of Mg and P followed by rapid thermal annealing in an $O_2$ atmosphere. Structural and compositional analyses for the p-type $(Zn_{0.97}Mg_{0.01}Mn_{0.02})O:P$ films annealed at $800^{\circ}C$ indicates that highly c-axis oriented homogeneous films were grown without any detectable formation of secondary phases. The films were found to be transparent in the visible range. The magnetic measurements clearly revealed an enhancement of room temperature ferromagnetism by p-type doping.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.15 no.2
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• pp.118-124
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• 2016

In this study, experiments are conducted to improve spray coating uniformity by using second and third electrodes based on the electrospray atomization mechanism. The uniformity of fabricated thin films can be improved by adjusting the design of the second electrode. The implementation of the second electrode with an elongated hole and a bending angle of $90^{\circ}$ results in highly uniform films. In addition, induced area to substrate is increased by lowering the applied voltage using the third electrode with a round rod shape. A linear correlation between applied voltage and induced area is confirmed. Thin film thickness and surface roughness are measured after the fabrication of thin films through the electrospray process. It is confirmed that a thin film is formed having an average thickness of 273.44 nm, a thickness uniformity of less than 10%, and a surface roughness of 3 nm.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.157-162
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• 2006

Chemical-mechanical polishing (CMP), one of the dominant technology for ULSI planarization, is used to flatten the micro electro-mechanical systems (MEMS) structures. The objective of this paper is to achieve good planarization of the deposited film and to improve deposition efficiency of subsequent layer structures by using surface-micromachining process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages of CMP process for MEMS structures are observed respectively by using the test patterns with structures larger than 1 urn line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of silica slurries: $ILD1300^{TM}\;and\;Nalco2371^{TM}$. And then, the experiments were conducted based on the pretest. A selectivity and pH adjustment of slurry affected largely step heights of MEMS structures. These results would be anticipated as an important bridge stone to manufacture MEMS CMP slurry.

• Nuclear Engineering and Technology
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• v.50 no.3
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• pp.446-452
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• 2018

To improve the accuracy and safety of irradiation tests in High flux Advanced Neutron Application ReactOr (HANARO), the nuclear energy deposition rate, which is called nuclear heating, was estimated for an irradiation capsule with an iridium sample in the irradiation hole in order. The gamma rays emitted from the radioisotopes (RIs) of the structural materials such as flow tubes of fuel assemblies and heavy water reflector tank were considered as radiation source. Using the ORIGEN2.1 code, emission rates of delayed gamma rays were calculated in consideration of the activation procedure for 8 years and 2 months of HANARO operation. Calculated emission rates were used as a source term of delayed gamma rays in the MCNP6 code. By using the MCNP code, the nuclear heating rates of the irradiation capsules in the inner core, outer core, and heavy water reflector tank were estimated. Calculated nuclear heating in the inner core, outer core, and heavy water reflector tank were 200-260 mW, 80-100 mW, and 10 mW, respectively.