• Tunnel and Underground Space
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• v.31 no.4
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• pp.289-308
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• 2021

This study conducts coupled thermo-hydro-mechanical numerical modeling to investigate the maximum temperature and conditions for securing mechanical stability of the high-level radioactive waste repository when temperature criteria of bentonite buffer are 100℃ and 125℃, respectively. In case of temperature criterion of buffer as 100℃, the maximum temperatures at the interface between canister and buffer are calculated to be 99.4℃ and 99.8℃, respectively for a case with disposal tunnel spacing of 40 m and deposition hole spacing of 5.5 m and for the other case with disposal tunnel spacing of 30 m and deposition hole spacing of 6.5 m. In case of temperature criterion of buffer as 125℃, spacings of disposal tunnel and deposition hole could be decreased to 30 m and 4.5 m, respectively, which reduces the disposal area up to 55% compared to the disposal area of KRS⁺. According to analysis of mechanical stability for various disposal spacings, RMR of rock mass for KRS⁺ should be larger than 72.4 which belongs to good rock in RMR classification to prevent failure of rock mass. As disposal spacing is decreased, required RMR of rock mass is increased. In order to prevent failure of rock mass for a case with disposal tunnel spacing of 30 m and deposition hole spacing of 4.5 m, RMR larger than 87.3 is needed. However, mechanical stability of the repository is secured for all cases with RMR over 75 considering the enhancement of rock strength due to confining stress induced by swelling of the bentonite buffer and backfill.

• Journal of Energy Engineering
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• v.12 no.3
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• pp.223-230
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• 2003

A study was performed to measure and analyze the gas-side fouling of heat exchanger to cool the exhaust gas from sludge incinerator at ironworks. The incinerator gas passes through inside of the vertical tubes of heat exchanger to preheat the combustion air. This kind of fouling occurs at the entrance region of the heat exchanger and thus the perforated fouling plate was designed to measure the gas-side fouling and to analyze the particulate deposit. As a result of analysis, the particulate deposition rate was influenced by temperature, particulate composition and size and also the deposition patterns were different according to the location of perforated fouling plate. The computational analysis was performed to obtain the deposition rates at the perforated fouling plate and the calculation showed that the deposition rate was varied with the hole size and particulate size. It was proved that the fouling at the entrance region of heat exchanger could be measured by the perforated fouling plate designed in this study.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.157-158
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• 2013

Organic solar cell was fabricated using one-pot deposition of a mixture of NiO nanoparticles, P3HT and PCBM. In the presence of NiO, the photovoltaic performance was slightly increased comparing to that of the device without NiO. When $TiO_2$ thin films with a thickness of 2~3 nm was prepared on NiO nanoparticles using atomic layer deposition, the power conversion efficiency was increased by a factor 2.5 with respect to that with bare NiO. Moreover, breakdown voltage of the film consisting of NiO, P3HT, and PCBM on indium tin oxide was increased by more than 1 V in the presence of $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidized on NiO surfaces, and $TiO_2$-shell on NiO nanoparticles. It is evidenced that S atoms of P3HT can be oxidzed on NiO surfaces, and $TiO_2$ shell heavily reduced oxidation of S at oxide/P3HT interfaces. Oxidized S atoms can most likely act as carrier generation sites and recombination centers within the depletion region, decreasing breakdown voltage and performance of organic solar cells. Our result shows that fabrication of various core-shell nanostruecutres of oxides by atomic layer deposition with controlled film thickness can be of potential importance for fabricating highly efficient organic solar cells.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.130-134
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• 2015

The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.773-776
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• 2005

In the fabrication of high performance Blue organic light emitting diode, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (Indium Tin Oxide)/Glass substrate by vacuum evaporation. And then, Blue color emission layer was deposited using GDI602 as a host material and GDI691 as a dopant. Finally, small molecule OLED with the structure of ITO/2-TNATA/NPB/GDI602+GDI691/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode, respectively. Blue OLED fabricated in our experiments showed the color coordinate of CIE(0.14, 0.16) and the maximum luminescence efficiency of 1.06 lm/W at 11 V with the peak emission wavelength of 464 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.239.2-239.2
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• 2016

Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1491-1492
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• 2011

In this study, we investigated about the effect of hole transport layer materials(${\alpha}$-NPD, TPD) depending on the electrical properties of organic light emitting diode. In deposition method, we used thermal evaporation and it was a method for performing thin film by attaching vaporizing a molecule to substrate in a high thermal and vaccum. We analyzed luminance, current density, external quantum efficiency and current efficiency in 40 [nm] as optimization thickness of ${\alpha}$-NPD and TPD. In result of experiment, maximum luminance of TPD had 1.1 times higher than ${\alpha}$-NPD, but ${\alpha}$-NPD had luminance, external quantum efficiency, and current efficiency higher than TPD in low operating voltage. Actually, ${\alpha}$-NPD had efficiency higher than TPD in low operating voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.233-233
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• 2010

It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity $0.5{\sim}3\{Omega}{\cdot}cm$, p-type, thickness $200{\mu}m$, direction[100]. The formation of n+ emitter layer from the liquid $POCl_3$ source was carried out for $890^{\circ}C$ in an ambient of $N_2:O_2$::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.469.2-469.2
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• 2014

All-solid-state solar cell based on Chloride doped organometallic halide perovskite, (CH3NH3)PbIxCl3-x, has achieved a highly power conversion efficiency (PCE) to over 15% [1] and further improvements are expected up to 20% [2]. In this way, solar cells using novel light absorbing perovskite material are actively being studied as a next generation solar cells. However, making solution-process require high temperature up to $500^{\circ}C$ to form compact hole blocking layer and sinter the mesoporous oxide scaffold layer. Because of this high temperature process, fabrication of flexible solar cells on plastic substrate is still troubleshooting. In this study, we fabricated highly efficient flexible perovskite solar cells with PCE in excess of 11%. Atomic layer deposition (ALD) is used to deposit dense $TiO_2$ as hole blocking layer on ITO/PEN substrate. The all fabrication process is done at low temperature below $150^{\circ}C$. This work shows that one of the important blueprint for commercial use of perovskite solar cells.