• Journal of the Korean institute of surface engineering
• /
• v.38 no.2
• /
• pp.60-64
• /
• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• Journal of the Korean Ceramic Society
• /
• v.43 no.12 s.295
• /
• pp.852-858
• /
• 2006

It is well known that $BaMgAl_{10}O_{17}:Eu^{2+}$ (BAM) and $CaMgSi_2O_6:Eu^{2+}$ (CMS) are a highly efficient blue phosphor. However, these phosphors in the form of thin films have not yet been realized clue to technical difficulties. We prepared thin film type BAM and CMS phosphors on quartz glass substrate using a pulsed laser deposition technique. The luminescent and structural properties of thin film phosphors were monitored as a function of key processing parameters such as oxygen partial pressure inside the deposition chamber, deposition time, laser energy density and the type of post-deposition treatments used. Even though we could not obtain single homogenous phases, thin films with large homogenous areas and a high photoluminescence could be produced by optimizing these processing parameters.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.11 no.11
• /
• pp.2095-2099
• /
• 2007

In this paper, the optimum amorphous silicon nitride thin film is deposited using plasma enhanced chemical vapor deposition(PECVD). Amorphous silicon nitride is deposited using $SiH_4$ and $NH_3$ gas. At this time, electrical and optical characteristics of amorphous silicon nitride and deposition rate are changed under deposition condition such as $SiH_4$, $NH_3$ and $N_2$ gas flow rate, chamber pressure, rf power and substrate temperature. From the experimental results, we can estimate that the deposition condition makes a good electrical characteristic of amorphous silicon nitride thin film.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.10 no.6
• /
• pp.90-99
• /
• 2002

The main purpose of this study lies on the development of micro dilution tunnel based on the Sierra Dilution chamber model. As a primary examination, characteristics of flow and temperature distributions during the steady dilution process in dilution chamber are observed with numerical analysis. The penetration of dilution air through porous tube as well as wall temperature and temperature gradient inside porous tube are examined. The thermophoretic velocity in terms of temperature behavior inside porous tube are defined and examined. Based on the ratio of penetration and thermophoretic velocities, all part of porous tube are shown to be safe from the particulate depositions. However, The inlet portion of porous tube in addition to the portion of impinging of dilution air are marginally safe from the particulate depositions. Generally the safer design against particulate deposition is required in provision f3r steady dilution process and for transient process as well.

• Journal of Advanced Marine Engineering and Technology
• /
• v.20 no.3
• /
• pp.82-90
• /
• 1996

In a diesel engine the phenomenon of spray impaction on a chamber wall has been taken as an undesirable matter because of the deposition of fuel on the surfaces, and the subsequent slow evaporation and mixing with air resulting in unburned hydrocarbons. Therefore many researches have concentrated on avoiding fuel impingement on surfaces. On the contrary done a number of studies using spray wall impactions in a positive way, which makes the droplets smaller, changes the direction into free spaces far from the wall and also improves mixing with air. In this paper the size of the impaction site prepared for the injection spray which is raised from the bottom in the piston bowl center is analysed as both simulative and experimental manner.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.270-270
• /
• 2016

We fabricated an organic-inorganic nano laminated encapsulation layer using molecular layer deposition (MLD) combined with atomic layer deposition (ALD). The $Al_2O_3$ inorganic layers as an effective single encapsulation layer were deposited at 80 degree C using ALD with alternating surface-saturation reactions of TMA and $H_2O$. A self-assembled organic layers (SAOLs) were fabricated at the same temperature using MLD. MLD and ALD deposition process were performed in the same reaction chamber. The prepared SAOL-$Al_2O_3$ organic-inorganic nano laminate films exhibited good mechanical stability and excellent encapsulation property. The measurement of water vapor transmission rate (WVTR) was performed with Ca test. We controlled thickness-ratio of organic and inorganic layer, and specific ratio showed a lowest WVTR value. Also this encapsulation layer contained very few pin-holes or defects which were linked in whole area by defect test. To apply into real OLEDs panels, we controlled a film stress from tensile to compressive and flexibility defined as an elastic modulus with organic-inorganic ratio. It has shown that OLEDs panel encapsulated with nano laminate layer exhibits better properties than single layer encapsulated in acceleration conditions. These results indicate that the organic-inorganic nano laminate thin films have high potential for flexible display applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.2
• /
• pp.89-94
• /
• 2011

The cause of the thickness non-uniformity in the large area deposition of $SiO_2$ films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the $SiO_2$ films, it was conformed that the non-uniform deposition of $SiO_2$ films was related with the spatial distribution of the oxygen radical density and electron temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.1071-1074
• /
• 2002

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.1049-1052
• /
• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

• Asian Journal of Atmospheric Environment
• /
• v.7 no.4
• /
• pp.199-208
• /
• 2013

Mercury exchange fluxes between atmosphere and soil surface were measured in two different types of soils; lawn soil (LS) and forest soil (FS). Average Hg emission from LS was higher than from FS although the soil Hg content was more than 2 times higher in forest soil. In LS, Hg emissions were much greater in warm season than in cold season; however, deposition was dominant in FS during warm season because of leafy trees blocking the solar radiation reaching on the soil surface. In both LS and FS, Hg fluxes showed significantly positive correlations with UV radiation and soil surface temperature during cold season. In addition, it was observed that emission showed positive correlation with UV radiation and soil temperature while there was negative relationship between deposition and UV radiation.