Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study on the Non-Uniformity of PECVD SiO2 Deposition by the Plasma Diagnostics

플라즈마 진단에 의한 PECVD SiO2 증착의 불균일성 원인 연구

  • Ham, Yong-Hyun (Department of Control and Instrumentation Engineering, Korea University) ;
  • Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University) ;
  • Lee, Hyun-Woo (Division of Electronic, Computer, and Communication Engineering, Hanseo University)
  • 함용현 (고려대학교 제어계측공학과) ;
  • 권광호 (고려대학교 제어계측공학과) ;
  • 이현우 (한서대학교 전자컴퓨터통신학부)
  • Received : 2010.11.16
  • Accepted : 2010.12.24
  • Published : 2011.02.01
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Abstract

The cause of the thickness non-uniformity in the large area deposition of $SiO_2$ films by PECVD(Plasma Enhanced Chemical Vapor Deposition) was investigated by the plasma diagnostics. The spatial distribution of the plasma species in the chamber was obtained with DLP(Double Langmuir Probe) and the new-designed probe-type QMS(Quadrupole Mass Spectrometer). From the relationship between the spatial distribution of the plasma species and the depositing rate of the $SiO_2$ films, it was conformed that the non-uniform deposition of $SiO_2$ films was related with the spatial distribution of the oxygen radical density and electron temperature.

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References

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