Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07b
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- Pages.1071-1074
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- 2002
Study on the deposition Characteristics of Bi Thin Film
Bi 박막의 성막 특성에 관한 연구
- Lee, Hee-Kab ;
- Park, Yong-Pil ;
- Lee, Joon-Ung (KIEEME)
- Published : 2002.07.08
Abstract
This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and