• 자원환경지질
• /
• 제28권1호
• /
• pp.79-88
• /
• 1995

The gravity measurment has been carried out at 48 gravity stations with intervals of 1.0~1.5 km along the survey line between Samcheog, Gosari and Taebaek to study subsurface geology and geologic structure in the northeastern part of the Ockchon zone. The Bouguer gravity anomaly values were obtained from the measured gravity values through the gravity corrections. The subsurface geology and geologic structure were interpreted quantitatively by means of the Fourier series method and Talwani method for 2.5 dimensional body. In the study area, the depth of Conrad discontinuity is about 10 km at Samcheog, northeastern end of the survey line, and it is increased rapidly to about 12.5 km at Miro, 15 km at Gosari and 15.5 km at Dongjeom, southwestern end of the survey line, respectively. The depth of the basement of the Ockchon zone exposed at Samcheog is increased smoothly to about 2 km at 5 km from Samcheog along the survey line, and is exposed again in the area between Singiry and Gosari. Beyond Gosari its depth is increased to about 1.7 km, and displaced 2.3 km downward by Osipcheon fault near Dogyeri and 0.5 km by Baeksan thrust near Cheolam, respectively. Many V-shaped low Bouguer gravity anomalies resulted from the fracture zone associated with faults imply the existence of Osipcheon fault and several inferred faults. The low Bouguer gravity anomaly zone between Tongdong and Dongjeom is caused by Jurassic gneissose granite. A local high Bouguer gravity anomaly at 35 km along the survey line from Samcheog is interpreted by the effect of iron deposit of high density existed at subsurface. The thickness of Great Limestone Group varies from 0.5 km to 1.4 km, that of Pyeongan Supergroup from 0.4 km to 0.9 km, and that of Yangdeog Group is about 0.3 km. The thickness of Jurassic gneissose granite varies from 1.5 to 3.0 km.

• 한국재료학회지
• /
• 제30권4호
• /
• pp.169-175
• /
• 2020

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N₂ sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10^-3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N₂ gas in the Ar:N₂ gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N₂ gas ratio and large amount of N₂ gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N₂=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO₂-Si_xN_y thin film is satisfactory at 97 %.

• 한국광물학회지
• /
• 제17권1호
• /
• pp.85-97
• /
• 2004

경주시 양남면의 해안단구퇴적층에 풍부히 함유된 혼펠스 자갈의 풍화작용을 X선회절분석, 주사전자현미경관찰, 화학분석을 이용하여 조사하였다. 분석결과, 혼펠스 자갈 풍화 초기에 사장석이 가장 먼저 용탈되어 공극을 형성하며, 그 후 풍화가 진행됨에 따라 흑운모는 흑운모-버미큘라이트 혼합층(hydrobiotite)으로 그리고 녹니석은 녹니석-버미클라이트 혼합층 광물로 변질되며, 사장석의 풍화산물로 할로이사이트가 부분적으로 침전되었다. 그러나 석영과 K장석은 거의 변질되지 않았다. 단구의 고도 차이에 따른 풍화각 두께와 생성되는 광물종의 차이가 인지되었다. 하부의 제2단구에서는 대체로 사장석의 약한 풍화작용이 주를 이루고 흑운모와 녹니석의 풍화작용은 관찰되지 않았으나, 상부의 제3단구에서는 사장석의 심한 풍화작용과 함께 흑운모와 녹니석이 혼합층으로 풍화되었다. 그러나 동일 단구퇴적층내에서도 풍화각 두께와 생성되는 광물종의 변화가 있으며, 이는 국지적인 지형변화에 따른 배수조건의 차이에 기인한 것으로 보인다.

• Journal of Electrochemical Science and Technology
• /
• 제8권3호
• /
• pp.197-205
• /
• 2017

Lead dioxide thin films were electrodeposited on nickel substrate from acidic lead nitrate solution. Current efficiency and thickness measurements, cyclic voltammetry, AFM, SEM, and X-ray diffraction experiments were conducted on $PbO_2$ surface to elucidate the effect of lead nitrate concentration, current density, temperature on the morphology, chemical behavior, and crystal structure. Experimental results showed that deposition efficiency was affected by the current density and solution concentration. The film thickness was independent of current density when deposition from high $Pb(NO_3)_2$ concentration, while it decreased for low concentration and high current density deposition. On the other hand, deposition temperature had negative effect on current efficiency more for lower current density deposition. Cyclic voltammetric study revealed that comparatively more ${\beta}-PbO_2$ produced compact deposits when deposition was carried out from high $Pb(NO_3)_2$ concentration. Such compact films gave lower charge discharge current density during cycling. SEM and AFM studies showed that deposition of regular-size sharp-edge grains occurred for all deposition conditions. The grain size for high temperature and low concentration $Pb(NO_3)_2$ deposition was bigger than from low temperature and high concentration deposition conditions. While cycling converted all grains into loosely adhered flappy deposit with numerous pores. X-ray diffraction measurement indicates that high concentration, high temperature, and high current density favored ${\beta}-PbO_2$ deposition while ${\alpha}-PbO_2$ converted to ${\beta}-PbO_2$ together with some unconverted $PbSO_4$ during cycling in $H_2SO_4$.

• 한국진공학회지
• /
• 제6권1호
• /
• pp.85-90
• /
• 1997

32cm직경의 $AlCu_x$(x=0.5%)음극 타겟과 회전 자석을 이용한 상용 마그네트론 스퍼 터링 장치에서 부가적인 플라즈마 여기 방법으로 스퍼터링된 입자들을 이온화시킨후, 수십 볼트의 직류 기판 바이어스로 이온의 방향성과 에너지를 조절하여 작은 트렌치나 via를 채 울 수 있는 공정을 개발하였다. 여기에서, 반경방향의 이온 플럭스비의 균일도 문제를 개선 하기 위하여, 입자들의 가시광선 영역의 방출선을 이용한 플라즈마 진단과, 패터닝된 웨이 퍼에 대한 직접 채우기로 플라즈마 내의 입자 분포와의 상관 관계를 찾고, RF 코일 설계의 개선을 도모하였다. 가시광 방출 분광에서 $Ar^{\circ},\;Ar^+;Al^+,\;Al^{\circ}$ 입자들의 방출선 세기는 1$\mu\textrm{m}$이 하의 크기를 갖는 트렌치와 via의 바닥과 top 두께비와 밀접한 관련이 있었다. RF코일의 직 경을 29cm에서 32cm로 증가 시키고, RF 입력부에 의한 비대칭을 개선하여 이온 플럭스비 의 척도가 되는 via 채우기의 바닥과 top의 두께비에서 7.5%에서 1.5%로의 균일도 향상을 얻었다.

• Corrosion Science and Technology
• /
• 제16권6호
• /
• pp.285-293
• /
• 2017

The effects of sulfate reducing bacteria (SRB) on the corrosion and scaling of the Q235 carbon steel has been investigated in the simulated sewage water and oil field gathering pipelines production water, using scanning electron microscopy (SEM), energy dispersive x-ray spectrometry (EDS), and three-dimensional stereoscopic microscope. Results indicated that the concentration of SRB reached the maximum value on the ninth day in simulated sewage water with a large amount of scaling on the surface of specimen. In oil field gathering pipelines, a large amount of scaling and mineralization of mineral salts and thick deposition of extracellular polymeric substance (EPS) layers were also observed on the surface of specimen. The thickness of biofilm was about $245{\mu}m$ within 30 days. After adding microbicides, the thickness of corrosion products film was only up to $48-106{\mu}m$ within 30 days, suggesting that SRB could induce biomineralization. Under-deposit corrosion morphology was uniform in the absence of microbicides while local corrosion was observed in the presence of microbicides.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
• /
• pp.193-197
• /
• 2002

The tribological properties and van der Waals attractive forces and the thermal stability of films are very important characteristics of highly hydrophobic fluorocarbon (FC) films for the long-term reliability of nano system. The effect of thermal annealing on films and van der Waals attractive forces and friction coefficient of films have been investigate d in this study. It was coated Al wafer which was treated O2 and Ar that ocatfluorocyclobutane ($C_4_{8}$) and Ar were supplied to the CVD chamber in the ratio of 2:3 for deposition of FC Films. Static contact angle and dynamic contact angle were used to characterize FC films. Thickness of films was measured by variable angle spectroscopy ellipsometer (VASE). Nanotribological data was got by atomic force microscopy (AFM) to measure roughness, lateral force microscopy (LFM) to measure friction force, and force vs. distance (FD) curve to evaluate adhesion force. FC films were cured in N2 and vacuum. The film showed the slight changes in its properties after 3 hr annealing. FTIR ATR studies showed the decrease of C-F peak intensity in the spectra as the annealing time increased. A significant decrease of film thickness has been observed. The friction force of Al surface was at least thirty times higher than ones with FC films. The adhesive force of bare Al was greater than 100 nN. After deposit FC films adhesive force was decreased to 40 nN. The adhesive force of films was decreased down to 10 nN after 24 hr annealing. During 24 hr annealing in $N_2$and vacuum at $100^{\circ}C$ film properties were not changed so much.

• 한국지반공학회논문집
• /
• 제22권1호
• /
• pp.53-61
• /
• 2006

지반 액상화는 흙유체간의 복잡한 동적상호작용에 의해 발생하므로 액상화 현상을 규명하고 액상화 모델링을 위한 데이타를 얻기 위하여 실험을 통한 액상화 연구가 널리 수행되고 있다. 본 연구에서는 원지반의 구속압을 모사할 수 있는 원심모형실험을 수행하여 수평지반의 액상화 거동을 분석하였다. 25cm두께의 지반에 40g의 원심가속도를 가하여 10m 두께의 원지반을 모사하였는데, 동적진동과 소산의 시간상사비 차이를 제거하기 위해 점성유체를 사용하였다. 실험결과로부터 과잉간극수압 소산거동은 침강현상과 압밀현상의 복합적 작용결과임을 확인하였다. 또한, 침강속도, 지반 가속도 진폭, 그리고 입자침강시의 동적 투수계수 값은 지반 구속압의 영향을 크게 받음을 알 수 있었다.

• 한국지반공학회논문집
• /
• 제23권5호
• /
• pp.153-162
• /
• 2007

치환공법을 적용하여 연약지반 상에 시공되는 보강토 옹벽에 대해 연약지반의 두께 및 강성, 치환깊이와 옹벽높이의 변화에 따른 옹벽의 거동을 연약지반 압밀현상과 시공단계를 함께 고려하는 유한요소해석으로 검토하였다. 옹벽의 거동은 벽체에 발생하는 변위와 침하량, 옹벽 기초지반에 발생하는 전단변형율로 표현하였다. 거동에 따른 옹벽의 안정성은 변위와 전단변형율의 한계값을 문헌연구로부터 정하고 이를 기준으로 평가하였다. 해석결과로부터, 옹벽의 거동은 연약지반 두께(t)와 강성, 치환깊이(d), 옹벽높이(h)의 변화에 따라 모두 영향을 받지만, 특히 d와 h의 변화에 민감한 것을 규명하였다. 또한, 옹벽의 안정성 유지를 위해 요구되는 d/h 값은 t와 h의 변화에 대하여 크게 영향을 받지 않음을 보였다. 이러한 결과로부터 연약지반 상 보강토 시공 구간 내에서 옹벽 높이가 변화하지만 그 변화정도가 극심하지 않은 경우에, 적정 치환깊이를 d/h로 나타낸 일률적인 값으로 제안할 수 있다는 결론을 얻었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.137-137
• /
• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.