• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.104-104
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• 2010

현재 디스플레이 시장은 급변하게 변화하고 있다. 특히, 비정질 실리콘의 경우 디스플레이의 채널층으로 주로 상용화되어 왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 경우 낮은 전자 이동도(< $1\;cm^2/Vs$)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide, Tin Oxide, Titanum Oxide등의 산화물이 연구되고 있으며, indium이나 aluminum등을 첨가하여 전기적인 특성을 향상시키려는 노력을 보이고 있다. Tin oxide의 경우 천연적으로 풍부한 자원이며, 낮은 가격이 큰 이점으로 작용을 한다. 또한, $SnO_2$의 경우 ITO나 ZnO 열적으로 화학적 과정에서 더 안정하다고 알려져 있다. 본 연구에서는 $SnO_2$ 기반의 박막 트랜지스터를 DC magnetron sputtering를 이용하여 상온에서 제작을 하였다. 일반적으로, $SnO_2$의 경우 증착 과정에서 산소 분압 조절과 oxygen vacancy 조절를 통하여 박막의 전도성을 조절할 수 있다. 이렇게 제작된 $SnO_2$의 박막을 High-resolution X-ray diffractometer, photoluminescence spectra, Hall effect measurement를 이용하여 전기적 및 광학적 특성을 알 수 있다. 그리고 후열처리 통하여 박막의 전기적 특성 변화를 확인하였다. gate insulator의 처리를 통하여 thin film의 interface의 trap density를 감소시킴으로써 소자의 성능 향상을 시도하였다. 그리고 semiconductor analyzer로 소자의 출력 특성 및 전이 특성을 평가하였다. 그리고 Temperature, Bias Temperature stability, 경시변화 등의 다양한 조건에서의 안정성을 평가하여 안정성이 확보된다면 비정질 실리콘을 대체할 유력한 후보 중의 하나가 될 것이라고 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.196-196
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, has grabbled appreciable attention due to its extraordinary mechanical, thermal, electrical, and optical properties. Based on the graphene's high carrier mobility, high frequency graphene field effect transistors have been developed. Graphene is useful for photonic components as well as for the applications in electronic devices. Graphene's unique optical properties allowed us to develop ultra wide-bandwidth optical modulator, photo-detector, and broadband polarizer. Graphene can support SPP-like surface wave because it is considered as a two-dimensional metal-like systems. The SPPs are associated with the coupling between collective oscillation of free electrons in the metal and electromagnetic waves. The charged free carriers in the graphene contribute to support the surface waves at the graphene-dielectric interface by coupling to the electromagnetic wave. In addition, graphene can control the surface waves because its charge carrier density is tunable by means of a chemical doping method, varying the Fermi level by applying gate bias voltage, and/or applying magnetic field. As an extended application of graphene in photonics, we investigated the characteristics of the graphene-based plasmonic waveguide for optical signal transmission. The graphene strips embedded in a dielectric are served as a high-frequency optical signal guiding medium. The TM polarization wave is transmitted 6 mm-long graphene waveguide with the averaged extinction ratio of 19 dB at the telecom wavelength of $1.31{\mu}m$. 2.5 Gbps data transmission was successfully accomplished with the graphene waveguide. Based on these experimental results, we concluded that the graphene-based plasmonic waveguide can be exploited further for development of next-generation integrated photonic circuits on a chip.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2005년도 춘계 학술대회
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• pp.231-238
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• 2005

본 연구에서는 유동저항이론을 기초로 하여 연속다공체, 분리단열망 및 연속다공체-분리단열망 공존암반과 같은 3가지 암반을 대상으로 암반 특성에 따른 지하수 유동저항 개념 모델링 및 관계식을 제안하였다. 정상상태조건에서 밀도변동은 고려하지 않았으며 유한 체적법을 이용하였다. 각종 물성치는 블록 중심에서 정의되고, flux는 블록면에서 정의되는 staggered 격자 체계하에서 모든 블록에 대해 Darcy 법칙이 적용되었다. 접촉면에서의 투수계수는 인접면 중심에서 정의된 물성치의 조화평균값을 사용하였다. 유동저항개념을 이용하여 인접한 블록간의 상대압력차와 flux의 관계를 표현하였다. 개개의 단열에서의 유동은 다공암반에서 이용된 방정식과 동일한 형태의 2차원 방정식으로 모사되었다. 본 논문에서 제안된 모델은 추후 다양한 암반 특성별 유동 모사 기법을 개발하는데 많은 기여를 할 것으로 기대된다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.623-627
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• 1999

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

• 한국광학회지
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• 제18권6호
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• pp.441-446
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• 2007

OLED 소자는 유리기판과 공기 층의 경계면에서 발생하는 전반사와 ITO-유기층으로 형성되는 광도파로를 따라 진행하는 도파모드 결합으로 인해 내부에서 생성된 빛의 80% 이상이 외부로 추출되지 못하게 된다. 본 연구에서는 마이크로 렌즈 어레이와 회절격자 레지스트 층을 이용하여 소자 내부에서 손실되는 빛을 외부로 추출시킴으로써 OLED의 발광효율을 향상시킨다. 마이크로 렌즈 어레이를 이용하여 유리기판-공기 전반사로 인해 내부에 갇히는 빛을 외부로 출력시키고, ITO 와 유기물 사이에 회절격자 레지스트 층을 삽입하여 ITO-유기층 광도파로에 갇힌 빛들을 수직방향으로 추출될 수 있도록 하였다. 제작된 OLED 소자에 전류밀도 $20mA/cm^2$를 인가한 경우, 마이크로 렌즈 어레이를 적용한 OLED에서 22%의 효율 개선을 얻었고, 회절격자 레지스트 층을 가지는 OLED 의 경우 41%의 효율개선을 얻을 수 있었다.

• Nuclear Engineering and Technology
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• 제48권4호
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• pp.859-869
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• 2016

Component-scale modeling of boiling is predominantly based on the Eulerian-Eulerian two-fluid approach. Within this framework, wall boiling is accounted for via the Rensselaer Polytechnic Institute (RPI) model and, within this model, the bubble is characterized using three main parameters: departure diameter (D), nucleation site density (N), and departure frequency (f). Typically, the magnitudes of these three parameters are obtained from empirical correlations. However, in recent years, efforts have been directed toward mechanistic modeling of the boiling process. Of the three parameters mentioned above, the departure diameter (D) is least affected by the intrinsic uncertainties of the nucleate boiling process. This feature, along with its prominence within the RPI boiling model, has made it the primary candidate for mechanistic modeling ventures. Mechanistic modeling of D is mostly carried out through solving of force balance equations on the bubble. Forces incorporated in these equations are formulated as functions of the radius of the bubble and have been developed for, and applied to, low-pressure conditions only. Conversely, for high-pressure conditions, no mechanistic information is available regarding the growth rates of bubbles and the forces acting on them. In this study, we use direct numerical simulation coupled with an interface tracking method to simulate bubble growth under high (up to 45 bar) pressure, to obtain the kind of mechanistic information required for an RPI-type approach. In this study, we compare the resulting bubble growth rate curves with predictions made with existing experimental data.

• Nuclear Engineering and Technology
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• 제46권2호
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• pp.147-158
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• 2014

In order to investigate how the microstructure of fuel/matrix-interaction (FMI) layers change during irradiation, different U-7Mo dispersion fuel plates have been irradiated to high fission density and then characterized using scanning electron microscopy (SEM). Specifially, samples from irradiated U-7Mo dispersion fuel elements with pure Al, Al-2Si and AA4043 (~4.5 wt.%Si) matrices were SEM characterized using polished samples and samples that were prepared with a focused ion beam (FIB). Features not observable for the polished samples could be captured in SEM images taken of the FIB samples. For the Al matrix sample, a relatively large FMI layer develops, with enrichment of Xe at the FMI layer/Al matrix interface and evidence of debonding. Overall, a significant penetration of Si from the FMI layer into the U-7Mo fuel was observed for samples with Si in the Al matrix, which resulted in a change of the size (larger) and shape (round) of the fission gas bubbles. Additionally, solid fission product phases were observed to nucleate and grow within these bubbles. These changes in the localized regions of the microstructure of the U-7Mo may contribute to changes observed in the macroscopic swelling of fuel plates with Al-Si matrices.

• 한국재료학회지
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• 제27권1호
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• 대한기계학회논문집
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• 제18권12호
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• pp.3276-3286
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• 1994

In most direct contact liquid-liquid heat exchangers, oil or hydrocarbon with a density less than water is normally used as dispersed working fluid. The main difficulty that arises with this arrangement lies in the control of the interface at the top of the column. When it is connected with a solar collector which uses water as its working fluid, the main difficulties arise from the fact that the water can be frozen during winter time. In order to solve these problems and to demonstrate the technical feasibility of a direct contact liquid-liquid heat exchanger, liquids heavier than water with low freezing temperature has been utilized as dispersed phase liquids in a small laboratory scale model made of pyrex glass. In the present investigation, dimethyl phthalate(C/sub 6/H/sub 4/)COOCH/sub 3/)/sub 2/) and diethyl phthalate (C/sub 6/H/sub 4/(CO/sub 2/C/sub 2/H/sub 5/)/sub 2/) are utilized as heavy dispersed phase working fluids. The results of the present investigation the technical in the utilization of heavier dispersed working liquid in the spray-column liquid-liquid heat exchanger for a solar system. The overall average temperature difference along the column is found to be almost half of the initial temperature difference between the dispersed and the continuous phase. Despite the fact that the two phthalates tested in the experiment differ significantly in some of their physical properties, the volumetric heat transfer coefficients in terms of dispersed fluid superficial velocities were found to be similar for both phthalates tested.