• Journal of the Korean Society of Radiology
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• v.14 no.5
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• pp.529-535
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• 2020

Geant4 is compatible with the Windows operating system in C++ language use, enabling interface functions that link DICOM or software. It was simulated to address the basic structure of the simulation using Geant4/Gate code and to specifically verify the density composition and lung cancer process in the human phantom. It was visualized using the Gate Graphic System, i.e. openGL, Ray Tracer: Ray Tracing by Geant4 Tracing, and using Geant4/Gate code, lung cancer is modeled in the human phantom area in 3D, 4D to verify the simulation progress. Therefore, as a large number of new functions are added to the Gate Code, it is easy to implement accurate human structure and moving organs.

• Journal of Korean Society of Transportation
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• v.28 no.4
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• pp.167-175
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• 2010

The ubiquitous transportation system environments make it possible to collect each vehicle's position and velocity data and to perform more sophisticated traffic flow management at the individual vehicle or platoon level through vehicle to vehicle (V2V) and vehicle to infrastructure (V2I) communication. It is necessary to develop a traffic flow management scheme to take advantage of the ubiquitous transportation system environments. This paper proposes an algorithm to advise the optimal speed for each vehicle according to the traffic flow condition. The algorithm aims to stabilize the traffic flow by advising the equilibrium speed to the vehicles speeding or crawling under freely flowing condition. And it aims to prevent or at least alleviate the shockwave propagation by advising the optimal speed that should dampen the speed drop under critical flow conditions. This paper builds a simulation testbed and performs some simulation experiments for the proposed algorithm. The proposed algorithm shows the expected results in terms of travel time reduction and congestion alleviation.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.95-99
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• 2003

We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature ($730^{\circ}C$) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 nm (without GI) to about I urn (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.19-24
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• 2000

To make stacked chip packages far high-density packaging of memory chips used in workstations or PC severs, several lead-frames are to be connected vertically. Fer this purpose. Sn or Sn/Ag were electrochemically deposited on Cu lead-frames and their microstructures were examined by XRD and SEM. Then, two specimens were annealed at $250^{\circ}C$ for 10 min. and pressed to be joined. The shear stresses of joined lead-frames were measured fur comparison. In the case of Sn only, $Cu_3Sn$ was formed by the reaction of Sn and Cu lead-frames. In the case of Sn/Ag, besides $Cu_3Sn$. $Ag_3Sn$ was formed by the reaction of Sn and Ag. Compared to joined specimens made from Sn only, those made from Sn/Ag showed 1.2 times higher shear stress. This was attributed to the $Ag_3Sn$ phase formed at the joined interface.

• Geotechnical Engineering
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• v.4 no.2
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• pp.33-44
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• 1988

The Taechong Dam completed in 1980 is a composite dam at which a junction was formed partly by butting the core against the end face of the concrete gravity section and partly by the core overlapping the upstream face of the concrete. In order to evaluate the performance of the junction, the interfaces between the concrete dam and core of the embankment dam were well instrumented with total pressure cells and piezometers. A nonlinear incremental finite element analysis simulating its construction behaviour was carried out under plane strain conditions. Material parameters for the core are determined from triaxial tests on the specimens, sampled in the quarry site and compacted to the field dry density at the field moisture content. Material parameters for the filter, transition materials and the rockfill are estimated from literature. When compared with the earth pressures measured at the interfaces, the analytical results show good agreement in the core, however, there are some discrepancy in the shell. A nonlinear model for pore pressure response is used successfully to predict the pore pressures at the interface in the core.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.5
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• pp.413-420
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• 2013

Effect of inherent volatile matters in fuels on electrochemical reactions of anode was investigated for a single direct carbon fuel cell (DCFC). Raw coals used as power source in the DCFC release light gases into the atmosphere under the operating temperature of DCFC ($700^{\circ}C$) by thermal decomposition and only char remained. These exhausted gases change the gas composition around anode and affect the electrochemical oxidation reaction of system. To investigate the effect of produced gases, comparative study was conducted between Indonesian sub-bituminous coal and its char obtained through thermal treatment, carbonizing. Maximum power density of raw coal ($52mW/cm^2$) was appeared higher than that of char ($37mW/cm^2$) because the gases produced from the raw coal during thermal decomposition gave additional positive results to electrochemical reaction of the system. The produced gases from coals were analyzed using TGA and FT-IR. The influence of volatile matters on anodic electrolyteelectrode interface was observed by the equivalent circuit induced from fitting of impedance spectroscopy data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.366.2-366.2
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• 2014

Impedance spectroscopy allows for simultaneous characterization of interface-controlled materials and/or devices in terms of electrical and dielectric aspects. Recently, there have tremendous interests in 2-dimensional electron gas layers (2DEGs) involving $LaAlO_3$ and $SrTiO_3$ whose features incorporates extremely high mobility and carrier concentrations along with metallic responses unlike the constituents, $LaAlO_3$ and $SrTiO_3$. Impedance spectroscopy offers the following unique features, such as simultaneous determination of conductivity and dielectric constants, identification of electrical origins among bulk-, grain boundary-, and electrode-based responses. Impedance spectroscopy was applied to the 2DEG $LaAlO_3/SrTiO_3$ system, in order to extract the electrical and dielectric information operating in the 2DEG system. The unique responses of the 2DEG system are investigated in terms of temperature and device structures. The underlying mechanism of the 2DEG system is proposed with the aim to optimizing the high-mobility 2DEG responses and to expedite the associated devices towards the high-density integrated chips.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.904-910
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• 2002

Surface alloying using TiC, $TiB_2$ and VC ceramic particles on carbon steel has been performed using high voltage electron beam. Each type of ceramic particles was mixed with flux of Al and $MgF_2$ in 1 to 4 ratio. The microstructures of the surface alloyed layers consisted of melted region, interface region. heat affected region and the unaffected matrix. The surface layer of the TiC surface alloyed had a cubed primary and a eutectic type of TiC. $TiB_2$ in surface layer of $TiB_2$ surface alloyed were incompletely melted with$ TiB_2$ particles as observed before the alloying. On the surface layer of the VC surface alloyed, very well defined cell structure was observed with VC on the cell boundary. In addition, ~50 nm in diameter VC particles in high density were ubiquitous in the matrix. Those fine VC particles prominently improved the hardness and wear resistance of the surface layer of the VC surface alloyed.