• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.1
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• pp.142-155
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• 1992

Numerical analysis is performed for the unsteady axisymmetric two dimensional phase change problem of freezing of water around a vertical tube. Heat conduction in the tube wall and solid phase, natural convection in liquid phase and volume expansion caused by density difference between solid and liquid phases are included in the numerical analysis. Existing correlation is used for estimating density-temperature relation of water, and the effect of volume expansion is reflected as fluid velocity at the interface and the free surface. As pure water has maximum density at 4.deg. C, it is found that there exists an initial temperature at which the flow direction reverses near the interface and by this effect the slope of interface becomes reversed depending on the initial temperature of water. By considering natural convection and solid-liquid density difference in the calculation, their effects on phase change process are studied and the effects of various parameters are also studied quantitatively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.377-381
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• 2009

Tetragonal-NiSi (010)/Si superstructures were calculated for studying the interface structure using density functional theory, The orthorhombic-NiSi was changed to the tetragonal-NiSi to be matched with the Si surface for epitaxy interface. The eight interface models were produced by the type of the Si surfaces, The tetragonal-NiSi (010)/Si (020)[00-1] superstructure was energetically the most favorable, and the interface thickness of this superstructure was the shortest among the tetragonal-NiSi (010)/Si superstructures. However, in the case of tetragonal-NiSi (010)/Si (010)[00-1] superstructure, it was energetically the most unfavorable, and the interface thickness was the longest. The energies and interface thicknesses of tetragonal-NiSi (010)/Si superstructures were influenced by the coordination number of Ni atoms and the bond length between atoms located at the interface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.492-499
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• 2013

We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1014-1021
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• 1998

We evaluated the effect of processing variables on microstructural evolution interface irregularity between Ag sheath and superconductor core and resultant critical current density(J$_{c}$) of (Bi,Pb)$_2$Sr$_2$Ca$_2$Cu$_3$O$_{x}$(2223) superconductor tape. The value of J$_{c}$ was significantly influenced by the interface irregularity, degree of texturing and relative 2223 content. The interface became more irregular(sausage effect), while the degree of texturing gradually improved as the dimension of tape decreased during forming process. As the dimension of wire/tape were changed from diameter of 3.25 mm to thickness of 0.20 mm, J$_{c}$ value was observed to be increased by 10 times. In addition, optimum sintering temperature for improved J$_{c}$ was observed to be 835$^{\circ}C$ in a ambient atmosphere probably due to combined effect of both improved texturing and high 2223 content. Microstructural investigation showed the degree of texturing was degraded by the existence of both second phases and interface irregularity. It was observed that larger grain size and better texturing was developed near relatively flat interface compared to those inside superconducting core.ting core.

• Journal of the Korean Geotechnical Society
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• v.25 no.4
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• pp.105-112
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• 2009

In this study, a series of direct shear tests were performed to investigate the characteristics of friction angles for sands and interface friction angle between sands and construction materials with respect to different relative density of the Nak-dong River sands and shearing velocity. The result of the test shows that friction angles of sands are always higher than interface friction angle between sands and construction materials. As the shearing velocity get faster, the friction angles of sand became higher. With respect to the density of sand by reducing void ratio, friction angles increase linearly, and relevant equations were proposed to calculate the friction angle by changing void ratio and relative density of sand. The interface roughness of construction materials was also an important factor in interface friction angle.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.383-384
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• 2008

In this paper, we extract interface trap density with treatment of gate dielectric of OTFT's. Interface trap densities in this paper were extracted from transfer curves. We obtained interface trap densities in pentacene / PVP interface Non-treated device has $1.4{\times}10^{12}cm^{-2}eV^{-1}$ Dit and treated device has $1.1{\times}10^{12}cm^{-2}eV^{-1}$ Dit.

• Journal of Korean Society of Transportation
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• v.28 no.3
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• pp.157-167
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• 2010

Density is the most important congestion indicator among the three fundamental flow variables, flow, speed and density. Measuring density in the field has two different ways, direct and indirect. Taking photos with wide views is one of direct ways, which is not widely used because of its cost and lacking of proper positions. Another direct density measuring method using two point detectors has been introduced with the concept of instantaneous density, average density and measurement interval. The relationship between accuracy and measurement interval has been investigated using the SIMULATION data produced by Paramics Application Programming Interface function. We analyze the affect of segment density accuracy by sensing gap each road condition such as sensing segment length, lane and LOS after gathering data by Paramics Application Programming Interface.

• Korean Journal of Computational Design and Engineering
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• v.14 no.4
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• pp.281-289
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• 2009

Topology optimization has been widely used for the optimal structure design for weight reduction and high performance. Since the result of three-dimensional topology optimization is represented by the discrete material distribution in finite elements, it is hard to interpret from a design point of view. In this paper, the method for interpreting three-dimensional topology optimization resuIt into a series of cross-sectional curve representation is proposed and interfaced with the existing CAD system for the practical use. The concept of node density and virtual grid is introduced to transform element density values into grid density and material boundaries in each cross section are identified based on the element volume rate to satisfy the amount of material specified in the original design intent. Design exampIes show that three-dimensional topology result can be converted into a form of curve CAD model and the seamless interface with CAD software can be achieved.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.8
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• pp.1458-1467
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• 1992

Recently, the composite materials have been researched actively by many researchers because of its useful properties. Especially, an interface crack on the dissimilar material exposes the behavior of the mixed mode crack even though under only the tension stress. In the previous papers, crack energy density(CED) was shown as the crack behavior evaluation parameter which can be expressed consistently from the onset until a final fracture. In a present paper, the basic properties of CED on the interface crack are examined because the results by CED at the homogeneous material above are also expected to be held at the dissimilar material. And we proposed that the contribution of each mode of CED can be separated and be evaluated. Furthermore, the total CED and contribution of each mode are evaluated by domain integral through a finite element analysis at the elastic crack model and the basic examination are carried out.

• ETRI Journal
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• v.15 no.2
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• pp.11-25
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• 1993

Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.