Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analysis of Interface trap density with treatment of gate dielectric layer of OTFT's

OTFT의 게이트 절연층의 표면처리에 따른 계면트랩 분석

  • Jeong, Seung-Hyeon (Department of electronics engineering of Dong-A University) ;
  • Kim, Se-Min (Department of electronics engineering of Dong-A University) ;
  • Song, Chung-Kun (Department of electronics engineering of Dong-A University) ;
  • Xu, Yong Xian (Kyungnam College of Information and Technology)
  • Published : 2008.06.18
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Abstract

In this paper, we extract interface trap density with treatment of gate dielectric of OTFT's. Interface trap densities in this paper were extracted from transfer curves. We obtained interface trap densities in pentacene / PVP interface Non-treated device has $1.4{\times}10^{12}cm^{-2}eV^{-1}$ Dit and treated device has $1.1{\times}10^{12}cm^{-2}eV^{-1}$ Dit.

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