• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.485-488
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• 2004

As scaling down the cell channel length, the increment of B concentration in channel region is inevitable to overcome the punch-through, especially in flash memory cell with 90nm technology. This paper shows that the high dose ion implantation in channel cause the Si defect. which has been proved to be the major cause of the tailed Vth in distribution. And also mechanical stress due to SiN-anneal process can induce the Si dislocation. and get worse it. With decreasing the channel implantation dose, skipping the anneal and reducing the mechanical stress, Si defect problem is solved completely. We are verify first that the optimization of B concentration in channel must be certainly considered in order to improve Si defect. It is also certainly necessary to stabilize the distribution of cell Vth in the next generation of flash memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.34-37
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.

• 유통과학연구
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• 제17권4호
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• pp.51-57
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• 2019

Purpose - This study aims to improve the distribution structure of the OLED market and develop cost-effective optimization techniques. Specifically, it is a study on the optimization of ferric chloride to improve the etch of SUS MASK for OLED. Research design, data, and methodology - Applying the optimal conditions of the experiment, the final confirmation was evaluated for improvement by the Process Capability Index (Cpk). It is possible to derive social performance such as improvement of precision of SUS MASK manufacturing, economic performance such as defect rate, reduction of waste generation and treatment cost, technological achievement such as SUS MASK production technology, improvement of profit structure of technology development and process improvement do. Results - The improvement of the Cpk before the improvement was made was confirmed to be 0.57% with a defect estimate of 25.07% with a failure estimate of 0.57% after the improvement, and 8.84% with a failure estimate of 0.57% level after the improvement. Conclusions - If the conclusions obtained from the specimen experiment are applied to the manufacturing process of SUS MASK, it will be possible to expect excellent cost-effective competitiveness due to the improvement of precision and reduction of defect rate to enhance the OLED market penetration.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• Journal of Genetic Medicine
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• 제18권2호
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• pp.147-151
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• 2021

The Say-Barber-Biesecker-Young-Simpson variant of Ohdo syndrome (SBBYSS) (Online Mendelian Inheritance in Man #603736) is a rare autosomal dominant disorder and clinically features blepharophimosis with ptosis, a mask-like facial appearance, cryptorchidism, congenital heart defect, long thumbs/great toes, and thyroid dysfunction. The etiology of SBBYSS has been shown to be due to heterozygous KAT6B gene mutation. Here we report a case of a neonate with SBBYSS identified a novel mutation in KAT6B gene. The patient showed typical dysmorphic facies, cryptorchidism with micropenis, overriding fingers, and long thumbs and toes at birth. He had also hypothyroidism, large atrial septal defect, and sensorineural hearing loss. The next generation sequencing identified a heterozygous novel variant, c.5206C>T (p.Gln1736Ter) in KAT6B gene. At the 9 months of age, he underwent patch closure for atrial septal defect. Until the 12-month follow-up, he was under-developed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.1353-1356
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• 2004

In recent year, OLED(organic light emitted display) is used as the next generation device of FPD. OLED have been replacing the flat panel display device such as LCD, STN-LCD and TFT because this device is more efficient, economic and simple than those FPD devices, and this need not backlight system for visualization. The performance and efficiency of OLED is related with surface defect of ITO coated glass substrate. The typical surface defect of glass substrate is nonuniformity and bad surface roughness. ITO coated glass substrate is destroied for inspection about surface roughness and non-uniformity. Generally detection of the defects in the surface for ITO coated glass substrate is dependent on operator's experience. In this research, relationship between working parameter and surface non-uniformity is studied using regression analysis.

• 비파괴검사학회지
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• 제25권3호
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• pp.215-221
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• 2005

It is required to evaluate nondestructively depth of surface-breaking cracks in structures. In this paper, the self-compensated technique by laser-based ultrasound is used to measure the depth of surface-breaking defect. Optical generation of ultrasound produces a well defined pulse with reliable frequency content. It is broad banded and suitable for measurement of attenuation and scattering over a wide frequency range. The self-calibrated signal transmission data of surface wave shows good sensitivity as a practical tool far assessment of surface-breaking defect depth. It is suggested that the relationship between the signal transmission and crack depth can be used to predict the surface-breaking crack depths in structures.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1992년도 춘계학술대회 논문집
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• pp.79-83
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• 1992

According to the variation of hydrostatic pressure on the central axis of deformable material, the V-shaped central bursting defect may be created on extrusion or drawing processes. The process factors whichaffect the generation of defects are die semi-angle, reduction ratio of cross-sectional area, friction factor, material properties and so on. The combination of these factors can determine the prossibility of defect creation and the shape of various round holes which have been created inside already. By the rigid plastic finite element method, this paper describes the observations of change in shape of a round hole with process conditions suchas die semi-angle, reduction ratio of cross-sectional area and friction factorat the unsteady state of axi-symmetrical extrusion process when the round hole is alreadyexisted inside the original billet, and also, the effects of process factors are investigated to prevent the possible defects.

• 소성∙가공
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• 제14권3호
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• pp.224-232
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• 2005

The high-pressure die-casting is one of the most effective methods to produce a large amount of products in short cycle time. This process, however, has a problem that the gas porosity defect appears easily. The generation of gas porosity is known mainly due to the air entrapment during the injection stage. Most of numerical simulations for the molten metal flow pattern observations have done in the treating of one phase fluid flow but the gas-liquid interface is essentially multi- phase phenomenon. In this paper, the two-phase fluid flow numerical simulation methods have been adapted to predict the gas porosity generations in the molten metal. The accuracy and the usefulness of the new simulation module have been emphasized and verified through some comparison experiments.