• 한국세라믹학회지
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• 제34권10호
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• pp.1015-1020
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• 1997

In the Nd;YAG crystal growth by Czochralski method, the relationship between the core formation and the solid-liquid interface was observed by controlling the temperature gradient in the furnace. When the crystal was grown along<111> direction, defects and core area were reduced as the temperature gradient increased. The optimum temperature gradient was found to be higher than 4$0^{\circ}C$/cm. The Nd3+ concentration analysis by ICP-Mass showed that the segregation coefficient was about 20% higher in the core region than core-free region, where the segregation coefficients of core region and core-free region were 0.22 and 0.18, respectively.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1995년도 추계학술발표회논문집(2)
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• pp.879-884
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• 1995

The results of performance assessment analyses have shown that the long-lived radionuclides such as I-129 control the potential individual dose impact to the public. I-129 is difficult-to-measure(DTM) in low-level waste because it is non-gamma emitting radionuclides and exists at extremely low concentrations in radioactive waste generated by nuclear reactors. In this study, computer modeling technique to predict release rate of I-129 is developed to provide another tools far performance assessment of land disposal facilities and characteristics of radwaste. Model suggested in this study will give conservative values of I-129 release rate far determination of radwaste characteristics. More detailed approach is implemented to account for release conditions of fuel source-nuclides. 1-131 concentration measured from reactor coolant and released fraction from tramp fuel have dominant roles in calculating release rate of I-129 with fuel defect conditions.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.15-15
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• 2002

Homogeneous and crack-free potassium lithium niobate (K₃Li/sub 2-x/Nb/sub 5+x/O/sub 15/, 0＜x＜0.5, KLN) single crystals were successfully grown by the Czochralski technique. The KLN single crystals of several different compositions were employed for the investigation of the lattice vibration spectra using infrared Raman spectroscopy. The characteristic Raman spectra of the [NbO/sub 6/]/sup 7-/ octahedral ions were strikingly influenced by the Li ion content. The symmetric stretch vibrational modes V₁, V₂ are broadened, and the symmetric bend vibration mode V/sub 5/ is broadened and even split into three peaks with increasing the Li content, supporting that the bend vibration modes of the [NbO/sub 6/]/sup 7-/ octahedrons are obviously perturbed by Li ions in the C site. Enhanced Raman peak intensities after the post annealing at 900℃ and for 24 h evidenced that a residual stress in as-grown crystals was negligible and only a defect concentration might be reduced.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.981-982
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• 2006

In this study, the synthesis and semiconducting properties of cation and defect-doped KTaO3 film is reported. KTaO3is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the KTaO3 lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting KTaO3:Ca films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were 0.27 cm2/Vs and 3.21018cm-3.

• 한국세라믹학회지
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• 제25권6호
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• pp.601-608
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• 1988

The effect of SiO2 addition on sintering characteristics of 8 mole percent yttria-stabilized zirconia ceramics is investigated. As the addition of SiO2 is increased, sinterbility, microstructure, and Vickers hardness of the zirconia ceramic increased but fracture toughness and electrical conductivity are decreased. It is considered that the electrical conductivity decrease with the increase of SiO2 is due to the decrease of defect concentration of ionized oxygen. From the complex impedance measurement, it is shown that the influence of SiO2 is more dominant at the resistivity of bulk region than of grain boundary region.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2014년도 추계 학술논문 발표대회
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• pp.63-64
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• 2014

In this study, we has a purpose to estimate the joint movement responsiveness performance for the domestic products of one-component structural silicon sealants. For this purpose, we make a comparative study for the four domestic products focused on tensile properties after allowed the cyclic-movements for three days at initial step of curing phase. A joint movement range ±10% and the rate of compression and extension 3.2mm/h were assumed in those tests. As a result, the large space were induced inside the sealant by rupture, and then adhesion and cohesion failures were caused by stress concentration. The tensile properties were reduced by 15~60% in comparison with physical properties. In this case, the generating defect was caused and the service-life was decreased. Thus, further researches as relationship of test condition and products properties on this behavior would be studied.

• 한국군사과학기술학회지
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• 제10권3호
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• pp.173-180
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• 2007

In this paper, we have proposed a simple finite element model for separation mode analysis on the roadwheel and track assembly of main battle tank and established a contact stress-based mechanism which could explain the initiation and growth of separation defect occurred during the test of padreplacable track. It was proved that the longitudinal contact shear stress component on the pin hole region of the track shoe body which is parallel to the driving direction is consistent with the crack initiation at the bonding surface between track shoe and wheel-side rubber. The longitudinal shear stress increased locally near the separated region after the separation initiated. So we could assume that the local stress concentration accelerates the separation growth according to the shear mode.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.959-964
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• 2007

To investigate the influence of partial discharge(PD) distribution characteristics due to various defects on the power cable joints interface, we used the K-means clustering method. As the result of PD number(n) distribution analyzing on $\Phi-n$ graph, the phase angle($\Phi$) of cluster centroid shifted to $0^{\circ}\;and\;180^{\circ}$ increasing with applying voltage. It was confirmed that the PD quantify(q) and euclidean distance of centroid were increased with applying voltage from the centroid distribution analyzing of $\Phi-q$ plane. The dispersion degree was increased with calculated standard deviation of the $\Phi-q$ cluster centroid. The PD number and mean value on $\Phi-q$ graph were some different by electric field concentration with defect types.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.642-647
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• 2014

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.71-71
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• 1998

Transition metal ions, such as Sc, V, Cr and Fe, doped rutile crystals were grown by Floating Zone method. Growth conditions for high quality of crystals depending on the concentration of doped ions were investigated. Grown crystals were cut and polished to thin wafers, and then various types of defects such as homogeneities, low angle grain boundaries, scattering centers, and oxygen vacancies were analyzed. The effects of transition metal ions on defect formation are discussed. Results and discussions on absorption and fluorescence spectra and electrical properties of grown crystals were also reported.