• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• Korean Journal of Digital Imaging in Medicine
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• v.8 no.1
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• pp.51-55
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• 2006

The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Tribology and Lubricants
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• v.33 no.2
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• pp.45-51
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• 2017

Engine oil is a substance used for the lubrication of internal combustion systems. However, in some case, defects in engine systems may contaminate engine oil with fuel. Contaminated engine oil can cause problems in the normal functioning of a vehicle. In this study, we investigate the functional properties of engine oil contaminated with diesel fuel. The test results indicate that the engine oil contaminated with diesel fuel has low flash point, pour point, density, kinematic viscosity and cold cranking simulator value. The contaminated engine oil which has low plash point can cause fire and explosion accident. Furthermore, a four ball test indicates that the contaminated engine oil increases wear scar to poor lubricity. Moreover, we investigate the GC pattern using SIMDIST (simulated distillation) for determination of diesel in engine oil. The SIMDIST analytic result, diesel was detected at earlier retention time than engine oil in chromatogram. Thus the SIMDIST method can define whether engine oil is contaminated by diesel fuel or not. We can use the SIMDIST method for the diagnosis of oil condition instead of analyzing other physical properties that require many analytic instruments, large volume of oil sample and long analysis time.

• Journal of Veterinary Clinics
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• v.26 no.5
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• pp.467-471
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• 2009

This report describes Neural Tube Defects (NTDs) with Abdominal Wall Defects (AWDs) on the sibling of Yorkshire terriers. The NTDs and AWDs are rare serious congenital defects. The NTDs are neurulation abnormality that results from to failed transformation of the neurual tube by the incomplete closure of the embryonic neural plate. These dysraphic states range form mild to severe according to developmental malformation that include fusion defects of skull (crania bifida; CB) and fusion defects of vertebrae (spina bifida; SB). The AWDs are genetic defects that results from to failed formation of abdominal wall and cavity. These dysraphic states are omphalocele and gastroschisis. The 12-month dam was delivered by caesarian section and 4 littermate had obvious malformations. One male dead stillbirth fetus (L1) was revealed the extruded abdominal viscera, omphalocele. One female fetus (L2) was died within 1 hour after birth with defects of abdominal muscle upper umbilicus, gastroschisis. 3rd fetus (L3) was died within 36 hours after parturition and revealed a copious dermal and vertebral defects on the midline thorax, upper SB asperta. 4th fetus (L4) is still growing well now at 6 months but at the 2 week age, appears hairy nevus on the frontal cranium and dorsal thoracic portion. The radiograph of L1 and L2 are shown decrease bony density of calvarium and L3 was shown defect of spinose processes of the T9-T13. On our knowledge, this is first report of the SB and CB in Yorkshire terrier. And also sibling of NTDs with AWDs that has not previously been reported in the dog.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.1
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• pp.46-53
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• 2010

A Compton X-ray backscatter technique has been developed to quantitatively assess impact damage in quasi-isotropic laminated composites made by a drop-weight tester. X-ray backscatter imaging system with a slit-type camera is constructed to obtain a cross-sectional profile of impact-damaged laminated composites from the electron-density variation of the cross section. A nonlinear scattering model based on Boltsman equation is introduced to compute Compton X-ray backscattering field for the defect assessment. An adaptive filter is also used to reduce noises from many sources including quantum noise and irregular distributions of fibers and matrix in composites. Delaminations masked or distorted by the first delamination are detected and characterized effectively by the Compton X-ray backscatter technique, both in width and location, by application of error minimization algorithm.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.325-325
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• 2012

1차원구속 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si (111) 기판 위에 GaAs NWs 와 InAs NWs를 촉매를 이용하지 않고 성장 하였다. vapour-liquid-solid (VLS)방법으로 성장하는 GaAs NWs는 Ga의 droplet을 이용하게 되는데 Ga이 Si 기판위에 자연 산화막에 존재하는 핀홀(pinhole)로 이동하여 1차적으로 Ga droplet 형성하고 이후 공급되는 Ga과 As은 SiO2 보다 GaAs와 sticking coefficient 가 좋기 때문에 Ga drolept을 중심으로 빠른 선택적 성장을 하게 되면서 NWs로 성장을 하게 된다. 반면에 InAs NWs를 성장 할 시에 droplet 방법으로 성장을 하게 되면 NWs가 아닌 박막 형태로 성장을 하게 되는데 이것으로 InAs과 GaAs의 $SiO_2$와의 sticking coefficient 의 차이를 추측을 할 수 있다. InAs NWs는 GaAs NWs는 달리 native oxide를 이용하지 않고 InAs 과 Si 사이의 11.5%의 큰 lattice mismatch를 이용한다. 이종의 epitaxy 방법에는 크게 3종류 (Frank-van der Merwe mode, Stranski-Krastanov mode, Volmer-Weber mode)가 있는데 각기 다른 adatom 과 surface의 adhesive force로 나누어지게 된다. 이 중 Volmer-Weber mode epitaxy는 adatom 의 cohesive force가 surface와의 adhesive force보다 큰 경우 성장 되는 방식으로 InAs NWs 는 이 방식을 이용한다. 즉 droplet을 이용하지 않는 vapour-solid (VS) 방법으로 성장을 하였다. 이 때 In 의 migration을 억제하기 위해서 VLS mode 의 GaAs NWs 보다 As의 공급을 10배 이상 하였다. FE-SEM 분석 결과 GaAs NWs는 Ga droplet을 확인 할 수 있었고 InAs NWs는 droplet이 존재하지 않았다. GaAs와 InAs NW는 density와 length가 V/III가 높을수록 증가 하였다.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.61-67
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• 2020

BiFeO₃ with perovskite structure is a well-known material that has both ferroelectric and antiferromagnetic properties called multiferroics. However, leaky electrical properties and difficulty of controlling stoichiometry due to Bi volatility and difficulty of obtaining high relative density due to high dependency on the ceramic process are issues for BiFeO₃ applications. In this work we investigated the sintering behavior of samples with different stoichiometries and sintering conditions. To understand the optimum sintering conditions, nonstoichiometric Bi_1±xFeO_3±δ ceramics and Ti-doped Bi_1.03Fe_1-4x/3Ti_xO₃ ceramics were synthesized by a conventional solid-state route. Dense single phase BiFeO₃ ceramics were successfully fabricated using a two-step sintering and quenching process. The effects of Bi volatility on microstructure were determined by Bi-excess and Ti doping. Bi-excess increased grain size, and Ti doping increased sintering temperature and decreased grain size. It should be noted that Ti-doping suppressed Bi volatility and stabilized the BiFeO₃ phase.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.40-44
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• 2008

Passive metal forms an interfacial diffuse layer on the surface of passive film by its reaction with $H^+$ or $OH^-$ ions in solution depending on solution pH. There is a critical pH, called pH point of iso-selectivity ($pH_{pis}$) at which the nature of the diffuse layer is changed from the anion-permeable at pH<$pH_{pis}$ to the cation-permeable at pH>$pH_{pis}$. The $pH_{pis}$ for a passivated Fe was determined by examining the effects of pH on the thickness of passive film and on the dissolution reaction occurring on the passive film under a gavanostatic reduction in borate-phosphate buffer solutions at various pH of 7~11. The steady-state thickness of passive film formed on Fe showed the maximum at pH 8.5~9, and further the nature of film dissolution reaction was changed from a reaction producing $Fe^{3+}$ ion at $pH\leq8.5$ to that producing $FeO_2{^-}$ at $pH\geq9$, suggesting that the $pH_{pis}$ of Fe is about pH 8.5~9. In addition, the passive film formed at pH 8.5~9, $pH_{pis}$, was found to be the most protective with the lowest defect density as confirmed by the Mott-Schottky analysis. Pitting potential was decreased with increasing $Cl^-$ concentration at $pH\leq8.5$ due probably to the formation of anion permeable diffuse layer, but it was almost constant at $pH\geq9$ irrespective of $Cl^-$ concentration due primarily to the formation of cation permeable diffuse layer on the film, confirming again that $pH_{pis}$ of Fe is 8.5~9.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.769-775
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• 2001

High quality PZT piezoelectric thin films were sputter- deposited on$ RuO_2$/$SiO_2$/Si substrates by using 2-step deposition method. As the first step, PZT seed layers were fabricated at a low temperature($475^{\circ}C$ ) to form a pure perovskite phase by reducing the volatility of Pb oxide. and then, as the second step, the PZT films were deposited at high temperatures ($530^{\circ}C$~$570^{\circ}C$) to reduce the defect density in the films. By this method, the pure perovskite phase was obtained at high deposition temperature range ($530^{\circ}C$~$570^{\circ}C$) and the superior electrical properties of PZT films were obtained on $RuO_2$substrate : 2Pr : 60$\mu$C/$\textrm{cm}^2$, $E_c: 60kV/cm, \;J_t: 10^{-6}A/cm^2\; at\; 250kV/cm$. The residual stress of PZT films fabricated by the 2-step deposition method was tensile and below 150MPa. It was attempted to control the residual stress in the PZT films by applying a negative bias to the substrate. As the amplitude of the substrate bias was increased, the residual tensile stress was slightly decreased, however, the ferroelectric properties of PZT films were degraded by ion bombardment.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.